CFY67
IFAG IMM RPD D HIR 1 of 8 V3, August 2011
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
1 2
34
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
Package
1
2
3
4
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
-
see below
G
S
D
S
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level: P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
CFY67
IFAG IMM RPD D HIR 2 of 8 V3, August 2011
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
3.5
V
Drain-gate voltage
VDG
4.5
V
Gate-source voltage (reverse / forward)
VGS
- 3... + 0.5
V
Drain current
ID
60
mA
Gate forward current
IG
2
mA
RF Input Power, C- and X-Band 1)
PRF,in
+ 10
dBm
Junction temperature
TJ
150
C
Storage temperature range
Tstg
- 65... + 150
C
Total power dissipation 2)
Ptot
200
mW
Soldering temperature 3)
Tsol
230
°C
Thermal Resistance
Junction-soldering point
Rth JS
515 (tbc.)
K/W
Notes.:
1) For VDS 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
CFY67
IFAG IMM RPD D HIR 3 of 8 V3, August 2011
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
15
30
60
mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA
-VGth
0.2
0.7
2.0
V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
IDp
-
< 50
-
µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
-IGp
-
< 50
200
µA
Transconductance
VDS = 2 V, ID = 15 mA
gm15
50
65
-
mS
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
-IG15
-
< 0.5
2
µA
Thermal resistance
junction to soldering point
Rth JS
-
450
-
K/W
CFY67
IFAG IMM RPD D HIR 4 of 8 V3, August 2011
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
NF
dB
CFY67-08, -08P
-
0.7
0.8
CFY67-10, 10P
-
0.9
1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
Ga
dB
CFY67-08, -08P
11.0
11.5
-
CFY67-10, 10P
10.5
11.0
-
Output power at 1 dB gain compression 2)
VDS = 2 V, ID = 20 mA, f = 12 GHz
P1dB
dBm
CFY67-08, -10
-
11.0
-
CFY67-08P, -10P
10.0
11.0
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
CFY67
IFAG IMM RPD D HIR 5 of 8 V3, August 2011
Typical Common Source S-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22
k-Fact.
S21/S12
MAG
[GHz]
[magn]
[angle]
[magn]
[angle]
[magn]
[angle]
[magn]
[angle]
[magn]
[dB]
[dB]
0,5
0,963
-15
5,315
165
0,0111
74
0,655
-14
0,40
26,8
1,0
0,938
-23
5,182
159
0,0225
68
0,639
-18
0,39
23,6
1,5
0,913
-33
5,060
150
0,0317
62
0,625
-23
0,42
22,0
2,0
0,889
-42
4,940
142
0,0411
57
0,611
-28
0,43
20,8
2,5
0,865
-52
4,824
133
0,0509
53
0,596
-35
0,43
19,8
3,0
0,844
-62
4,715
124
0,0585
46
0,582
-41
0,45
19,1
3,5
0,823
-72
4,591
115
0,0650
41
0,567
-47
0,47
18,5
4,0
0,800
-81
4,450
107
0,0714
36
0,552
-53
0,50
17,9
4,5
0,779
-91
4,319
99
0,0768
31
0,534
-60
0,52
17,5
5,0
0,761
-100
4,183
91
0,0811
25
0,520
-66
0,54
17,1
5,5
0,743
-109
4,043
83
0,0850
20
0,500
-72
0,58
16,8
6,0
0,725
-117
3,906
75
0,0885
15
0,490
-77
0,60
16,4
6,5
0,708
-125
3,769
68
0,0917
11
0,477
-83
0,63
16,1
7,0
0,690
-132
3,640
61
0,0942
7
0,467
-88
0,67
15,9
7,5
0,673
-139
3,529
54
0,0962
3
0,455
-93
0,71
15,6
8,0
0,656
-146
3,427
48
0,0978
-1
0,442
-97
0,76
15,4
8,5
0,640
-153
3,344
41
0,0998
-5
0,430
-101
0,79
15,3
9,0
0,625
-160
3,271
34
0,1010
-9
0,417
-104
0,84
15,1
9,5
0,611
-168
3,202
28
0,1027
-12
0,406
-108
0,87
14,9
10,0
0,597
-175
3,143
21
0,1033
-16
0,393
-113
0,91
14,8
10,5
0,586
177
3,089
15
0,1044
-20
0,381
-118
0,94
14,7
11,0
0,576
169
3,041
8
0,1056
-24
0,370
-123
0,96
14,6
11,5
0,564
161
3,002
1
0,1068
-28
0,358
-129
0,98
14,5
12,0
0,554
154
2,960
-5
0,1070
-32
0,351
-134
1,01
14,4
13,8
12,5
0,547
146
2,923
-12
0,1076
-36
0,343
-140
1,03
14,3
13,3
13,0
0,536
139
2,886
-19
0,1076
-41
0,336
-146
1,06
14,3
12,7
13,5
0,529
131
2,848
-26
0,1081
-45
0,330
-151
1,09
14,2
12,4
14,0
0,522
124
2,815
-33
0,1087
-50
0,325
-156
1,11
14,1
12,1
14,5
0,517
116
2,787
-40
0,1087
-55
0,320
-161
1,13
14,1
11,9
15,0
0,510
108
2,765
-46
0,1093
-60
0,315
-167
1,14
14,0
11,7
15,5
0,505
99
2,751
-54
0,1090
-65
0,311
-172
1,16
14,0
11,6
16,0
0,502
91
2,735
-61
0,1090
-71
0,305
-177
1,18
14,0
11,4
16,5
0,499
82
2,719
-68
0,1091
-77
0,301
177
1,19
14,0
11,3
17,0
0,498
74
2,722
-75
0,1097
-82
0,297
172
1,19
13,9
11,3
17,5
0,498
68
2,741
-80
0,1103
-87
0,294
168
1,18
14,0
11,4
18,0
0,498
62
2,760
-84
0,1107
-90
0,290
165
1,17
14,0
11,5
CFY67
IFAG IMM RPD D HIR 6 of 8 V3, August 2011
Typical Common Source S-Parameters (continued)
CFY67-06: VDS = 2 V, ID = 15 mA, Zo
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22
k-Fact.
S21/S12
MAG
[GHz]
[mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[dB]
[dB]
0,5
0,962
-13
6,112
166
0,0111
76
0,539
-15
0,42
27,4
1,0
0,937
-22
5,956
159
0,0211
69
0,525
-19
0,42
24,5
1,5
0,913
-33
5,810
150
0,0302
64
0,511
-24
0,44
22,8
2,0
0,889
-41
5,690
142
0,0394
58
0,498
-30
0,46
21,6
2,5
0,860
-51
5,522
133
0,0484
53
0,484
-36
0,48
20,6
3,0
0,834
-61
5,386
124
0,0567
48
0,469
-43
0,50
19,8
3,5
0,810
-71
5,236
116
0,0637
43
0,456
-49
0,52
19,1
4,0
0,784
-80
5,067
107
0,0702
38
0,440
-55
0,55
18,6
4,5
0,761
-90
4,911
99
0,0760
33
0,423
-61
0,58
18,1
5,0
0,740
-99
4,752
91
0,0809
28
0,410
-67
0,60
17,7
5,5
0,720
-107
4,586
84
0,0851
24
0,397
-73
0,63
17,3
6,0
0,701
-116
4,420
76
0,0889
19
0,385
-79
0,66
17,0
6,5
0,682
-124
4,260
69
0,0918
15
0,373
-84
0,69
16,7
7,0
0,663
-131
4,107
62
0,0941
11
0,362
-89
0,73
16,4
7,5
0,644
-139
3,974
55
0,0962
7
0,351
-93
0,77
16,2
8,0
0,627
-148
3,852
49
0,0980
3
0,343
-98
0,80
15,9
8,5
0,611
-157
3,747
42
0,0995
-1
0,333
-102
0,83
15,8
9,0
0,595
-165
3,659
35
0,1008
-5
0,323
-107
0,86
15,6
9,5
0,581
-173
3,571
29
0,1022
-9
0,313
-112
0,90
15,4
10,0
0,567
178
3,497
22
0,1039
-13
0,303
-116
0,92
15,3
10,5
0,556
170
3,430
16
0,1049
-17
0,293
-121
0,95
15,1
11,0
0,546
163
3,368
9
0,1064
-21
0,284
-127
0,98
15,0
11,5
0,537
155
3,317
3
0,1078
-26
0,274
-131
1,00
14,9
12,0
0,528
149
3,265
-4
0,1093
-30
0,265
-135
1,02
14,8
13,8
12,5
0,520
142
3,216
-10
0,1105
-35
0,255
-139
1,05
14,6
13,3
13,0
0,513
135
3,169
-17
0,1116
-39
0,246
-143
1,07
14,5
12,9
13,5
0,506
128
3,120
-24
0,1126
-44
0,235
-146
1,10
14,4
12,5
14,0
0,498
121
3,080
-30
0,1137
-49
0,225
-150
1,12
14,3
12,2
14,5
0,492
113
3,044
-37
0,1151
-54
0,215
-155
1,14
14,2
12,0
15,0
0,489
106
3,014
-44
0,1160
-59
0,207
-159
1,15
14,1
11,8
15,5
0,484
98
2,990
-51
0,1171
-65
0,200
-163
1,16
14,1
11,6
16,0
0,485
91
2,967
-58
0,1185
-71
0,193
-167
1,17
14,0
11,5
16,5
0,485
83
2,945
-65
0,1197
-77
0,187
-171
1,17
13,9
11,4
17,0
0,485
75
2,947
-71
0,1206
-82
0,182
-175
1,17
13,9
11,4
17,5
0,487
69
2,961
-77
0,1215
-87
0,177
-178
1,16
13,9
11,5
18,0
0,490
64
2,979
-81
0,1230
-90
0,174
179
1,14
13,8
11,6
CFY67
IFAG IMM RPD D HIR 7 of 8 V3, August 2011
Typical Common Source Noise-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo
f
NFmin
opt|
opt
Rn
[GHz]
[dB]
[magn]
[angle]
1
0,29
0,756
14
15,60
2
0,30
0,690
28
14,65
3
0,34
0,643
43
13,56
4
0,38
0,606
58
12,10
5
0,41
0,578
73
10,53
6
0,46
0,553
87
8,86
7
0,50
0,534
102
7,16
8
0,55
0,518
116
5,62
9
0,60
0,505
131
4,29
10
0,64
0,495
145
3,23
11
0,69
0,486
159
2,53
12
0,73
0,476
173
2,22
13
0,78
0,467
-173
2,37
14
0,84
0,455
-160
2,96
15
0,88
0,443
-146
4,01
16
0,93
0,428
-132
5,47
17
0,99
0,412
-118
7,26
18
1,05
0,394
-103
9,61
CFY67
IFAG IMM RPD D HIR 8 of 8 V3, August 2011
Micro-X Package
Edition 2011-08
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
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