CFY67 HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain 4 3 1 2 Space Qualified ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY67-08 (ql) Marking - Ordering Code Pin Configuration see below 1 2 3 4 G S D S Package Micro-X CFY67-08P (ql) CFY67-10 (ql) CFY67-10P (ql) CFY67-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 8 V3, August 2011 CFY67 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 3.5 V Drain-gate voltage VDG 4.5 V Gate-source voltage (reverse / forward) VGS - 3... + 0.5 V Drain current ID 60 mA Gate forward current IG 2 mA RF Input Power, C- and X-Band 1) PRF,in + 10 dBm Junction temperature TJ 150 C Storage temperature range Tstg - 65... + 150 C Total power dissipation 2) Ptot 200 mW Soldering temperature 3) Tsol 230 C Rth JS 515 (tbc.) K/W Thermal Resistance Junction-soldering point Notes.: 1) For VDS 2 V. For VDS > 2 V, derating is required. 2) At TS = + 47 C. For TS > + 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. IFAG IMM RPD D HIR 2 of 8 V3, August 2011 CFY67 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 15 30 60 mA Gate threshold voltage VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V Drain current at pinch-off VDS = 1.5 V, VGS = - 3 V IDp - < 50 - A Gate leakage current at pinch-off VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 A Transconductance VDS = 2 V, ID = 15 mA gm15 50 65 - mS Gate leakage current at operation VDS = 2 V, ID = 15 mA -IG15 - < 0.5 2 A Thermal resistance junction to soldering point Rth JS - 450 - K/W IFAG IMM RPD D HIR 3 of 8 V3, August 2011 CFY67 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics 1) Noise figure VDS = 2 V, ID = 15 mA, f = 12 GHz NF dB CFY67-08, -08P - 0.7 0.8 CFY67-10, 10P - 0.9 1.0 Associated gain. 1) VDS = 2 V, ID = 15 mA, f = 12 GHz Ga dB CFY67-08, -08P 11.0 11.5 - CFY67-10, 10P 10.5 11.0 - Output power at 1 dB gain compression 2) P1dB VDS = 2 V, ID = 20 mA, f = 12 GHz dBm CFY67-08, -10 - 11.0 - CFY67-08P, -10P 10.0 11.0 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). IFAG IMM RPD D HIR 4 of 8 V3, August 2011 CFY67 Typical Common Source S-Parameters f |S11|