1250 V, 25 A Shorted-anode IGBT Features General Description * High Speed Switching Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. * Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A * High Input Impedance * RoHS Compliant Applications * Induction Heating, Microwave Oven C G TO-3PN E G CE Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF PD FGA25S125P-SN00337 Unit 1250 V 25 V Collector Current @ TC = 25oC 50 A Collector Current @ TC = 100oC 25 A 75 A Pulsed Collector Current o Diode Continuous Forward Current @ TC = 25 C 50 A Diode Continuous Forward Current @ TC = 100oC 25 A W o Maximum Power Dissipation @ TC = 25 C 250 Maximum Power Dissipation @ TC = 100oC 125 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds C oC 300 Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max Typ. Max. - 0.6 o C/W 40 o C/W - Unit Notes: 1: Limited by Tjmax (c)2012 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FGA25S125P/D FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT FGA25S125P Device Marking Device Package Reel Size Tape Width Quantity FGA25S125P FGA25S125P -SN00337 TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1250 - - V - 1.2 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = 1250V, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 500 nA IC = 25mA, VCE = VGE VGE = 0 V, IC = 1mA On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 6.0 7.5 V IC = 25A, VGE = 15V TC = 25oC - 1.8 2.35 V IC = 25A, VGE = 15V TC = 125oC - 2.05 - V IC = 25A, VGE = 15V, TC = 175oC - 2.16 - V IF = 25A, TC = 25oC - 1.7 2.4 V 175oC - 2.1 - V - 2150 - pF VCE = 30V, VGE = 0V, f = 1MHz - 48 - pF - 36 - pF - 24 - ns IF = 25A, TC = Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 250 - ns td(off) Turn-Off Delay Time - 502 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 580 - uJ Ets Total Switching Loss - 1665 - uJ td(on) Turn-On Delay Time - 21.2 - ns tr Rise Time - 304 - ns td(off) Turn-Off Delay Time - 490 - ns tf Fall Time - 232 - ns Eon Turn-On Switching Loss - 1310 - uJ Eoff Turn-Off Switching Loss - 952 - uJ VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load,, TC = 175oC - 138 - ns - 1085 - uJ Ets Total Switching Loss - 2262 - uJ Qg Total Gate Charge - 204 - nC Qge Gate to Emitter Charge - 15 - nC Qgc Gate to Collector Charge - 103 - nC VCE = 600V, IC = 25A, VGE = 15V www.onsemi.com 2 FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 200 o Figure 2. Typical Output Characteristics 200 20V TC = 25 C VGE=17V Collector Current, IC [A] Collector Current, Ic [A] 160 20V o TC = 175 C 15V 12V 120 80 10V 9V 40 17V 160 15V 120 12V 80 10V VGE = 7V 40 9V 8V 8V 7V 0 0.0 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 0 0.0 10.0 Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter VCE = 20V Common Emitter VGE = 15V 160 o Collector Current, IC [A] Collector Current, IC [A] 10.0 Figure 4. Transfer Characteristics 200 TC = 25 C o TC = 175 C --- 120 80 o 80 TC = 25 C o TC = 175 C 60 40 20 40 0 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 0 6.0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.0 50A 2.5 2.0 25A 1.5 1.0 25 IC = 12.5A 50 3 6 9 12 Gate-Emitter Voltage,VGE [V] 75 100 125 150 o Case Temperature, TC [ C] 15 Figure 6. Saturation Voltage vs. VGE 3.5 Collector-Emitter Voltage, VCE [V] 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] o TC = 25 C 15 10 25A www.onsemi.com 3 IC = 12.5A 5 0 175 Common Emitter 4 50A 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 5000 20 Common Emitter Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 IC = 25A 8 50A 12.5A 1000 100 Coes Common Emitter VGE = 0V, f = 1MHz 4 Cres o TC = 25 C 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 100 15 Common Emitter 10s o TC = 25 C 12 VCC = 200V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 600V 400V 9 6 3 100s 10 1ms 10ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 1 210 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 10000 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 25A Switching Time [ns] Switching Time [ns] td(off) td(off) 1000 tf 100 o o TC = 25 C TC = 25 C o o 10 10 TC = 175 C TC = 175 C 20 30 40 50 Gate Resistance, RG [] Common Emitter VCC = 600V, VGE = 15V IC = 25A 60 70 10 10 www.onsemi.com 4 20 30 40 50 Gate Resistance, RG [] 60 70 FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1000 td(off) Switching Time [ns] Switching Time [ns] tr 100 td(on) 10 Common Emitter VGE = 15V, RG = 10 tf Common Emitter VGE = 15V, RG = 10 100 o o TC = 25 C TC = 25 C o o TC = 175 C 1 10 20 30 TC = 175 C 40 40 10 50 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 10000 Switching Loss [uJ] Eon Switching Loss [uJ] 50 Figure 16. Switching Loss vs. Collector Current 5000 1000 Eoff Common Emitter VCC = 600V, VGE = 15V IC = 25A Eon 1000 Eoff TC = 25 C o o TC = 175 C TC = 175 C 100 10 20 30 40 50 Gate Resistance, RG [] Common Emitter VGE = 15V, RG = 10 o o TC = 25 C 60 100 10 70 Figure 17. Turn off Switching SOA Characteristics 20 30 40 Collector Current, IC [A] 50 Figure 18. Forward Characteristics 100 100 Forward Current, IF [A] Collector Current, IC [A] 20 30 40 Collector Current, IC [A] 10 10 1 o TC = 25 C Safe Operating Area o o VGE = 15V, TC = 175 C TC = 175 C 0.1 1 1 0 10 100 1000 Collector-Emitter Voltage, VCE [V] www.onsemi.com 5 1 2 3 Forward Voltage, VF [V] 4 FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.7 0.5 0.2 0.1 PDM 0.1 0.06 1E-5 0.05 0.02 0.01 single pulse 1E-4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] www.onsemi.com 6 10 100 FGA25S125P -- 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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