eGaN® FET DATASHEET EPC2016C
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 1
EPC2016C eGaN® FETs are supplied only in
passivated die form with solder bars.
Die size: 2.1 x 1.6 mm
Applications
• High Speed DC-DC conversion
• Class-D Audio
• High Frequency Hard-Switching and
Soft-Switching Circuits
Benets
• Ultra High Eciency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
EFFICIENT POWER CONVERSION
HAL
EPC2016C – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 16 mΩ
ID , 18 A
G
D
www.epc-co.com/epc/Products/eGaNFETs/EPC2016C.aspx
Maximum Ratings
PARAMETER VALUE UNIT
VDS
Drain-to-Source Voltage (Continuous) 100 V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V
ID
Continuous (TA = 25˚C, RθJA = 13.4°C/W) 18 A
Pulsed (25°C, TPULSE = 300 µs) 75
VGS
Gate-to-Source Voltage 6V
Gate-to-Source Voltage -4
TJOperating Temperature –40 to 150 °C
TSTG Storage Temperature –40 to 150
Thermal Characteristics
PARAMETER TYP UNIT
RθJC
Thermal Resistance, Junction to Case
2
°C/W RθJB
Thermal Resistance, Junction to Board
4
RθJA
Thermal Resistance, Junction to Ambient (Note 1)
69
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
All measurements were done with substrate connected to source.
Static Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 300 μA 100 V
IDSS Drain-Source Leakage VGS = 0 V, VDS = 80 V 25 150 µA
IGSS
Gate-to-Source Forward Leakage VGS = 5 V 0.5 3 mA
Gate-to-Source Reverse Leakage VGS = -4 V 0.15 0.25 mA
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 3 mA 0.8 1.4 2.5 V
RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 11 A 12 16 mΩ
VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.8 V
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment
leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally
high electron mobility and low temperature coecient allows very low RDS(on), while its lateral
device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end
result is a device that can handle tasks where very high switching frequency, and low on-time are
benecial as well as those where on-state losses dominate.