05012GOF-050 50 Amp Silicon Controlled Rectifier Available on commercial versions DESCRIPTION This SCR (Silicon Controlled Rectifier) has superior circuit-commutated turn-off time (tq) of <50 s. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Compact TO-208AC package. * 1200 Amperes surge current. * dv/dt - 200 V/sec * RoHS compliant versions available (commercial grade only). TO-208AC (TO-65) Package APPLICATIONS / BENEFITS * Economical for medium power applications. MAXIMUM RATINGS Parameters/Test Conditions Junction Temperature Storage Temperature Thermal Resistance Junction-to-Case Thermal Resistance Case-to-Sink o Maximum Leakage Current @ TJ = 125 C & 1200 V o Maximum Reverse Leakage @ TJ = 125 C & 1200 V Symbol Value TJ TSTG R JC R CS I DRM I RRM -65 to 125 -65 to 150 0.35 0.20 6 6 Unit o C C o C/W o C/W mA mA o MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0226, Rev. 1 (111595) (c)2011 Microsemi Corporation Page 1 of 5 05012GOF-050 MECHANICAL and PACKAGING * * * * * * * CASE: Metal TO-65 TERMINALS: Long = Cathode, Short = Gate, Stud = Anode MARKING: SCR symbol, MSC (Microsemi Corporation), PART#, D/C (Date Code) POLARITY: See SCR symbol on package. WEIGHT: 0.56 ounces (16 grams) typical Mounting Torque: 25 - 30 inch pounds See Package Dimensions on last page. PART NOMENCLATURE 050 12 G O F -050 (e3) 50 A max average on-state current RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant 1200 V forward & reverse repetitive blocking voltage This FAST tq part: o tq <50 sec @ 125 C dv/dt 200 V/sec Package type F = TO-208AC (TO-65) Symbol dv/dt I TM t TC TJ tp V DRM VR SYMBOLS & DEFINITIONS Definition Critical rate of rise of off-state voltage On-state Current: The maximum (peak) total value. Time or duration. Case Temperature: The temperature measured at the case. Junction Temperature: The temperature of a semiconductor junction. Pulse Time: The time interval between a reference point on a leading edge of a pulse waveform and a reference point on the trailing edge of the same waveform. Repetitive Peak Off-State Voltage: The maximum (peak) total value of repetitive peak off-state voltage Reverse Voltage: The reverse voltage dc value, no alternating component. T4-LDS-0226, Rev. 1 (111595) (c)2011 Microsemi Corporation Page 2 of 5 05012GOF-050 ELECTRICAL CHARACTERISTICS Description Max. Max. Max. Max. Max. RMS on-state current overage on-state current peak on-state voltage holding current peak one cycle surge current Max. I2t capability for fusing Condition Rating Notes I T(RMS) I T(AV) V TM IH I TSM 80 A 50 A 2.3 V 200 mA 1200 A T C = 94 C T C = 94 C I TM = 500 A(peak) I2t 6000 A2S T C = 94 C 60 Hz t = 8.3 ms Switching: Description Condition Rating Critical role of rise of on-state current (Note 1) di/dt 200 A/s T J = 125 oC Typical delay time (Note 1) Typical circuit commuted turn-off time (Note 2) Td Tq 3.0 s 50 s T J = 125 oC NOTES: Notes 1. I TM = 50 A, V D = V DRM . GT = 12 V open circuit, 20 ohm - 0.1 sec, rise time. 2. I TM = 50 A, di/dt = 5 A/sec, V R during turn-off interval = 50 V min, reapplied dv/dt = 20 V/sec, linear to rated V DRM , V GT = 0 V Triggering: Description Max. gate voltage to trigger Max. nontriggering gate voltage Max. gate current to trigger Max. peak gate power Average gate power Max. peak gate current Max. peak gate voltage (forward) Max. peak gate voltage (reverse) Condition Rating V GT V GD I GT P GM P G(AV) I GM V GM V GM 3.0 V 0.25 V 100 mA 10 W 1.0 W 3.0 A 20 V 10 V Condition Rating IDRM I RRM dv/dt 6 mA 6 mA Notes T J = 125 oC tp = 10 s Blocking: Description Max. leakage current Max. reverse leakage Critical rate of rise of off-state voltage T4-LDS-0226, Rev. 1 (111595) 200 V/s (c)2011 Microsemi Corporation Notes o T J = 125 C & 1200 V T J = 125 oC & 1200 V T J = 125 oC Page 3 of 5 05012GOF-050 Instantaneous On-State Current - Amperes Maximum Power Dissipation - Watts GRAPHS Average On-State Current - Amperes Junction to Case Thermal Impedance - oC/Watts FIGURE 3 Maximum Power Dissipation Instantaneous On-State Voltage - Volts Time in Seconds Average On-State Current - Amperes FIGURE 4 Transient Thermal Impedance Peak On-State Current - Amperes Maximum Allowable Case Temperature - oC FIGURE 1 Typical Forward On-State Characteristics FIGURE 2 Forward Current Derating T4-LDS-0226, Rev. 1 (111595) Number of Cycles FIGURE 5 Maximum Nonrepetitive Surge Current (c)2011 Microsemi Corporation Page 4 of 5 05012GOF-050 PACKAGE DIMENSIONS Dim. A B C D E F G H J K M N P R S Inches Minimum --.677 --1.200 .427 .115 --.220 .200 .120 --.065 .145 .055 .025 Maximum --.685 .770 1.250 .447 .155 .515 .249 .300 --.667 .085 .155 .065 .030 Millimeter Minimum --17.20 --30.48 10.84 2.92 --5.58 5.08 3.05 --1.65 3.68 1.40 .64 Maximum --17.40 19.56 31.75 11.35 3.94 13.08 6.32 7.62 --16.94 2.15 3.93 1.65 .76 Notes 1 2 Dia. Dia. Dia. Notes: 1. 1/4-28 UNF-3A 2. Full thread within 2 1/2 threads T4-LDS-0226, Rev. 1 (111595) (c)2011 Microsemi Corporation Page 5 of 5