T4-LDS-0226, Rev. 1 (111595) ©2011 Microsemi Corporation Page 1 of 5
05012GOF-050
Available on
commercial
versions
50 Amp Silicon Controlled Rectifier
DESCRIPTION
This SCR (Silicon Con trolled Rectifier) has superior circuit-commutated tu r n-off time (tq) of
<50 µs.
TO-2 08AC (TO-65)
Package
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• Compact TO-208AC package.
• 1200 Amper es sur ge current.
• dv/dt – 200 V/µsec
• RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
• Economical for medium power appl icati ons.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction Temperature
TJ
-65 to 125
oC
Storage Temperature
TSTG
-65 to 150
oC
Thermal Resistance Junction-to-Case
RӨJC
0.35
oC/W
Thermal Resistance Case-to-Sink
RӨCS
0.20
oC/W
Maximum Leakage Current @ TJ = 125 oC & 1200 V
IDRM
6
mA
Maximum Reverse Leakage @ TJ = 125 oC & 1200 V
IRRM
6
mA
T4-LDS-0226, Rev. 1 (111595) ©2011 Microsemi Corporation Page 2 of 5
05012GOF-050
• CASE: Metal TO-65
• TERMINALS: Long = Cathode, Short = Gate, Stud = Anode
• MARKING: SCR symbol, MSC (Microsemi Corporation), P ART#, D/C (Date Code)
• POLARITY: See SCR symbol on package.
• WEIGHT: 0.56 ounces (16 grams) typical
• Mounting Torque: 25 – 30 inch pounds
• See Package Dimensions on last page.
050 12 G O F -050 (e3)
50 A max average on-state
current
1200 V forward & reverse
repetitive blocking voltage
dv /dt 200 V/
µ
sec
RoHS Compliance
e3 = RoHS Compl iant
Blank = non-RoHS Compliant
This FAST tq part:
tq <50 µsec @ 125 oC
Package type
F = TO-208AC ( TO-65)
SYMBOL S & DEFI NITIONS
Symbol
Definition
dv/dt
Critical rate of rise of off-state voltage
ITM
On-state Current: The maxim um (peak) total value.
t
Time or duration.
TC
Case Temperature: The temperature measured at the case.
TJ
Junction Temperature: The temperature of a semiconductor junction.
tp Pulse Time: The time interval between a reference point on a leading edge of a pulse waveform and a reference point
on the trailing edge of the same waveform.
VDRM
Repetitive Peak Off-State Voltage: The maximum (peak) total value of repetitive peak off-state vol tage
VR
Reverse Voltage: The reverse voltage dc value, no al ternating component.
T4-LDS-0226, Rev. 1 (111595) ©2011 Microsemi Corporation Page 3 of 5
05012GOF-050
Description
Condition
Rating
Notes
Max. RMS on-state current
IT(RMS)
80 A
TC = 94 °C
Max. overage on-state current
IT(AV)
50 A
TC
=
94 °C
Max. peak on-state voltage
VTM
2.3 V
I TM = 500 A(peak)
Max. holding current
IH
200 mA
Max. peak one cycle surge current
ITSM
1200 A
TC = 9 4 °C 60 Hz
M ax. I
2
t capability for fusing
I
2
t
60 0 0 A
2
S
t = 8.3 ms
Switching:
Description
Condition
Rating
Notes
Critical role of rise of on-state current (Note 1)
di/dt
20 0 A/µs
T
J
= 125 oC
Typical delay time (Note 1)
Td
3.0 µs
Typical circuit commuted turn-off time (Note 2)
Tq
50 µs
TJ = 125 oC
NOTES: 1. ITM = 50 A, VD = VDRM. GT = 12 V open circuit, 20 ohm – 0.1 µsec, rise time.
2. ITM = 50 A, di/dt = 5 A/µsec, VR dur ing turn -off interval = 50 V min, reappl ied dv/dt = 20 V/µsec, linear to rated VDRM, VGT = 0 V
Triggering:
Description
Condition
Rating
Notes
Max. gate voltage to trigger
VGT
3. 0 V
Max. nontriggering gate voltage
VGD
0.25 V
TJ = 125 oC
Max. gate current to trigger
IGT
100 mA
Max. peak gate power
PGM
10 W
Average gate power
P
G(AV)
1.0 W
tp = 10 µs
Max. peak gate current
IGM
3. 0 A
Max. peak gate voltage (forward)
VGM
20 V
Max. peak gate voltage (reverse)
VGM
10 V
Blocking:
Description
Condition
Rating
Notes
Max. leakage current
IDRM
6 mA
TJ = 125 oC & 1200 V
Max. reverse leakage
IRRM
6 mA
TJ = 125 oC & 1200 V
Critical rat e of rise of off-state voltage
dv/dt
20 0 V/µs
T
J
= 125 oC
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05012GOF-050
I ns tantaneous On-State Voltag e – Volts Time in S econ ds
FIGURE 1 FIGURE 4
Typical For ward On-State C haracterist ics Tran sient Th er mal Imped anc e
A verage On-Stat e C urr ent – Amperes Numb er of C ycles
FIGURE 2 FIGURE 5
Forward Cur r ent Deratin g Maximum Nonrepetitive S urge Current
I ns tantaneous On-State Current - Amperes
Junction to Case
Ther m al Im pedance – oC/Watts
Maximum Power Dissipation
– Watts
A verage On-Stat e Cur r ent – Amperes
FIGURE 3
Max i mum Power Di ssi pat ion
Maximum Allowable Case
Temperature – oC
Peak On-State Current - Amperes
T4-LDS-0226, Rev. 1 (111595) ©2011 Microsemi Corporation Page 5 of 5
05012GOF-050
Notes: 1. ¼-2 8 UNF-3A
2. Full thread within 2 ½ threads
Dim.
Inches
Millimeter
Minimum
Maximum
Minimum
Maximum
Notes
A
---
---
---
---
1
B
.677
.685
17.20
17.40
C
---
.770
---
19.56
D
1.200
1.250
30.48
31.75
E
.427
.447
10.84
11.35
F
.115
.155
2.92
3.94
G
---
.515
---
13.08
H
.220
.249
5.58
6.32
2
J
.200
.300
5.08
7.62
K
.120
---
3.05
---
M
---
.667
---
16.94
Dia.
N
.065
.085
1.65
2.15
P
.145
.155
3.68
3.93
Dia.
R
.055
.065
1.40
1.65
Dia.
S
.025
.030
.64
.76