PDE-V11-0
FAST RECOVERY DIO DE
V11
FEATURES OUTLINE DRAWING
• For high speed switching.
• Diffused-junction. Glass passivated and
encapsulated.
ABSOLUTE MAXIMUM RATINGS
Items Type V11J V11L V11M V11N
Repetitive Peak Reverse Voltage VRRM V800 1000 1300 1500
Non-Repetitive Peak Reverse Voltage VRSM V1000 1300 1600 1800
Average Forward Current IF(AV) A0.4(Single-phase half sine wave 180° conduction
TL = 100°C, Lead length = 10mm )
Surge(Non-Repetitive) Forward Current IFSM A30( Without PIV, 10ms conduction, Tj = 150°C start )
I2t Limit Value I2tA
2s 3.6( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature Tj°C-65 ~ +150
S torage Tem perature Tstg °C-65 ~ +200
Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cyc les or 18 0 °×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Items Symbols Units Min. Typ. Max. Test Conditions
Peak Reverse Current IRRM µA
-
2.0 10 Rated VRRM
Peak Forward Voltage VFM V
--
2.5 I
FM=0.4 Ap, Single-phase half sine
wave 1 cycle
Reverse Recovery Time trr µs
--
0.4 IF=2mA, VR=-15V
Rth(j-a) 80
Steady State Thermal Impedance Rth(j-l) °C/W
--
50 Lead length = 10 mm
Unit in mm(inch)
Weight: 0.35 (g)
5MAX
(0.2)
Direction of polarity
Cathode band
29MIN.
(1.14)
62MIN. (2.44)
29MIN.
(1.14) (0.14)
(0.03)
0.8
φ
3.5 MAX
φ
V11J (800V) Green
V11L (1000V) Yellow
V11M (1300V) Black
V11N (1500V) Red
Type
Color of
cathode band
Color of glass seal : Blue
PDE-V11-0
V11
Forward characteristics
012345678910
0.1
1
10
100
PEAK FORWARD VOLTAGE DROP (V)
PEAK FORWARD CURRENT (A)
TL=150˚C
TL=25˚C
Single-phase half sine wave
Conduction : 10ms 1 Cycle
Max. average forward power dissipation
(Resistive or induct ive load)
0 0.2 0.4 0.6 0.8
0
0.4
0.8
1.2
1.6
2.0
AVERAGE FORWARD CURRENT (A)
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
Single-phase
( 50Hz )
DC
Max. allowable ambient temperature
(Resistive or induct ive load)
0 0.1 0.2 0.3 0.4 0.5
0
20
40
60
80
100
120
140
160
180
AVERAGE FORWARD CURRENT (A)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
Single-phase half sine wave
180˚ conduction (50Hz)
PC board (100x180x1.6t)
Copper foil ( 5.5)
L
L
Lead length
L=10mm
20mm
25mm
Max. allowable lead temperature
(Resistive or induct ive load)
0 0.1 0.2 0.3 0.4 0.5
0
20
40
60
80
100
120
140
160
180
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
AVERAGE FORWARD CURRENT (A)
Single-phase half sine wave
180˚ conduction (50Hz)
Lead temp PC board
(100x180x1.6t)
Copper foil ( 5.5)
L
L
Lead length
L=10mm
20mm
25mm
Surge forward current characteristic
( Non-repetitive )
1 10 100
0
10
20
30
40
Without PIV
CYCLES
SURGE FORWARD CURRENT (A)
10ms
1 cycle
Surge current
peak value
With PIV
Typ. reverse current vs. junction temperature
0 50 100 150 200
1
10
100
1000
REVERSE CURRENT (µA)
JUNCTION TEMPERATURE (˚C)
Note : at VRRM
PDE-V11-0
V11
Steady state thermal impedance
0102030
0
20
40
60
80
100
120
140
STEADY STATE THERMAL IMPEDANCE (˚C/W)
LEAD LENGTH (mm)
Rth(j - a)
Rth(j - l)
Lead
length
Lead temp.
measured point
(φ0.5 thermocouple)
PC board
(100×180×1.6t)
20
Lead
length
Copper foil ( 5.5)
2
15
Ambient temp. measured point
Transient thermal impedance
TRANSIENT THERMAL IMPEDANCE (˚C/W)
0.1
1
10
200
100
0.001 0.01 0.1 1 10 100
TIME (s)
Rth(j - a)
Rth(j - l)
Lead length = 10 mm
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
Typ. reverse recovery time vs. junction temperature
0 40 80 120 160 200
0
0.4
0.8
1.2
1.6
2.0
REVERSE RECOVERY TIME (µs)
JUNCTION TEMPERATURE (˚C)
Reverse recovery time(trr) test circuit
- 15V
22µs
50µF D.U.T
2mA
15V 600Ω
0t
0.1I
rp
I
rp
t
rr
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during op eration of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
HITACHI POWER SEMICOND UCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Notices
NoticesNotices
Notices
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
