CLA30E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.25 V Single Thyristor Part number CLA30E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827f CLA30E1200HB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 10 A 2 mA TVJ = 25C 1.28 V 1.56 V 1.25 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 120 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1.61 V T VJ = 150 C 30 A 47 A TVJ = 150 C 0.86 V 12.5 m 0.5 K/W K/W 0.25 TC = 25C 250 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine VR = 0 V 440 As t = 10 ms; (50 Hz), sine TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 13 t P = 300 s PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0.3 A/s; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/s 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1.3 TVJ = -40 C 1.6 V VD = 6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 150C 0.2 V 1 mA TVJ = 25 C 90 mA R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 60 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 30 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827f CLA30E1200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 50 Unit A -40 150 C -40 125 C 150 C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description C L A 30 E 1200 HB IXYS Logo g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Assembly Line Zyyww abcd Assembly Code Date Code Ordering Standard Ordering Number CLA30E1200HB Similar Part CLA30E1200PB CLA30E1200PC CS22-12io1M CS22-08io1M CMA30E1600PN CMA30E1600PB CMA30E1600PZ Equivalent Circuits for Simulation I V0 R0 Package TO-220AB (3) TO-263AB (D2Pak) (2) TO-220ABFP (3) TO-220ABFP (3) TO-220ABFP (3) TO-220AB (3) TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tube Quantity 30 Code No. 508221 Voltage class 1200 1200 1200 800 1600 1600 1600 T VJ = 150 C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Marking on Product CLA30E1200HB V m Data according to IEC 60747and per semiconductor unless otherwise specified 20150827f CLA30E1200HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827f CLA30E1200HB Thyristor 60 280 50 1000 50 Hz, 80% VRRM VR = 0 V 240 40 IT TVJ = 45C 200 30 ITSM 20 [A] [A] 160 TVJ = 150C 125C 10 TVJ = 45C I2t TVJ = 125C [A2s] TVJ = 125C 100 120 TVJ = 25C 0 0,5 1,0 1,5 80 0,001 2,0 0,01 VT [V] B IGT: TVJ = 25C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 80 C IGT: TVJ = -40C IGT: TVJ = 0C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125C 3 1 t [s] Fig. 1 Forward characteristics 4 0,1 101 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125C tgd IT(AV)M [s] [A] 40 lim. 100 20 IGD: TVJ = 25C typ. A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe 60 80 120 160 Tcase [C] Fig. 6 Max. forward current at case temperature 0,6 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,5 0,4 ZthJC 30 0,3 [W] i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] 20 0,2 10 0,1 0 ti (s) 0.01 0.001 0.02 0.2 0.11 0,0 0 10 20 30 40 0 IT(AV) [A] 25 50 75 100 125 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827f