CDIL cMsT3204 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking PACKAGE OUTLINE DETAILS CMBT3903 = 1Y ALL DIMENSIONS IN mm CMBT3904 = 1A Pin configuration 1 = BASE 2= EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) VcBo max. 60 Collector-emitter voltage (open base) VCEO max. 40 Emitter-base voltage (open collector) VEBO max. 6 Collector current (DC) Ic max. 200 Total power dissipation up to Tamb = 25 C Prot max. 250 DC current gain CMBT3903 > 50 Ic = 10 mA; Vczg =1V hrge < 150 CMBT3904 > 100 Ic = 10 mA; Vcg =1V her < 300 Transition frequency at f = 35 MHz Ic = 10 mA; Vcg = 20 V fr > 300 104 22<<< MHzEDIL CMBT3903 CMBT3904 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VcBo _ max. 60 V Collector-emitter voltage foper. base) VCEO max. 40 V Emitter-base voltage (open collector) VEBO max. 6V Collector current (d.c.) Ic max. 200 mA Total power dissipation up to Tamb = 25 C Ptot max. 250 mW Storage temperature Tstg 55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE Tj * P (Rth jt * Rth t-s * Rth s-a) * Tamb Thermal resistance from junction to ambient Rth j-a = 500 K/w CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector-emitter breakdown voltage Ic = 1 mA; lp =0 V(BR)CEO min. 40 V Collector-base breakdown voltage Ic = 10nA; Ig = 0 Vipr)CcBO min. 60 V Emitter-base breakdown voltage Ig = 102A; Ic = 0 V(BR)EBO min. 6V Collector cut-off current VcE = 30 V; Veg =3 V ICEX max. 50 nA Output capacitance at f = 1 MHz Ip =0;Vcop=a5V Co max. 4 pF Input capacitance at f = 1 MHz Ic = 0; VBE = 0,5 V Ce max. 8 pF Base current with reverse biased emitter junction VeEB = 3 V; Vcg = 30 V IBEx max. 50 nA Saturation voltages Ic = 10 mA; lg = 1 mA VcCEsat max. 0.2 V Ic = 50 mA; lp = 5 mA VcEsat max. 03 V Ic = 10 mA; lp = 1 mA VBEsat min. 0.65 V max. 0.85 V Ic = 50 mA; ip = 5 mA VBEsat max. 0.95 V 105CDIL CMBT3903 CMBT3904 CMBT3903 CMBT3904 D.C. current gain * Ic = 0,1 mA; Vcg=1V hre > 20 40 Ic =1 mA; VcR=1V hpg > 35 70 Ic = 10 mA; VcgE=1V hfe > 50 100 < 150 300 Ic = 50 mA; Vcg=1V hfe > 30 60 Ic = 100 mA; Vcg=1V hfe > 15 30 Transition frequency at f = 100 MHz Ic = 10 mA; Vc = 20 V fy min. 250 300 MHz Noise figure at Rg = 1 kQ Ic = 100 pA; Vcg=5 V f = 10 Hz to 15,7 kHz F max. 6 5 dB Small Signal Current Gain Vcg = 10V; Ic = | mA; f = 1 KHz hfe min. 50 100 max. 200 400 106