SD101AW thru SD101CW Vishay Semiconductors formerly General Semiconductor Schottky Diodes SOD-123 .022 (0.55) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band Top View Mounting Pad Layout Dimensions in inches and (millimeters) 0.055 (1.40) 0.055 (1.40) .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. 0.094 (2.40) .010 (0.25) min. Features * For general purpose applications * The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the Mini-MELF case with type designations LL101A thru LL101C, in the DO-35 case with type designations SD101A through SD101C and in the SOD-323 case with type designations SD101AWS through SD101CWS. Mechanical Data Case: SOD-123 Plastic Case Weight: approx. 0.01g Marking SD101AW = SA Code: SD101BW = SB SD101CW = SC Packaging Codes/Options: D3/10K per 13" reel (8mm tape), 30K/box D4/3K per 7" reel (8mm tape), 30K/box Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit VRRM 60 50 40 V Power Dissipation (Infinite Heatsink) Ptot 400(1) mW Maximum Single Cycle Surge 10 s Square Wave IFSM 2 A Peak Inverse Voltage SD101AW SD101BW SD101CW Thermal Resistance Junction to Ambient Air RJA Junction Temperature Tj Storage Temperature Range TS (1) C/W (1) C 300 125 -65 to +150 C Note: (1) Valid provided that electrodes are kept at ambient temperature. Document Number 88242 13-May-02 www.vishay.com 1 SD101AW thru SD101CW Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit J Reverse Breakdown Voltage SD101AW SD101BW SD101CW V(BR)R IR = 10A 60 50 40 -- -- -- -- -- -- V Leakage Current SD101AW SD101BW SD101CW IR VR = 50V VR = 40V VR = 30V -- -- -- -- -- -- 200 200 200 nA IF = 1mA -- -- -- -- -- -- 0.41 0.40 0.39 IF = 15mA -- -- -- -- -- -- 1.0 0.95 0.90 Ctot VR = 0V, f = 1MHz -- -- -- -- -- -- 2.0 2.1 2.2 pF trr IF = IR = 5mA, recover to 0.1IR -- -- 1 ns Forward Voltage Drop SD101AW SD101BW SD101CW VF SD101AW SD101BW SD101CW Junction Capacitance SD101AW SD101BW SD101CW Reverse Recovery Time Ratings and Characteristic Curves (T www.vishay.com 2 A V = 25C unless otherwise noted) Document Number 88242 13-May-02 SD101AW thru SD101CW Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88242 13-May-02 www.vishay.com 3