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Semiconductor Components Industries, LLC, 2016 1www.onsemi.com
FFSH20120ADN_F155 Rev.1.3
FFSH20120ADN_F155 — Silicon Carbide Schottky Diode
October 2016
FFSH20120ADN_F155
Silicon Carbide Schottky Diode
1200 V, 20 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
Absolute Maximum Ratings TC = 25 °C unless otherwise noted. (per leg)
Thermal Characteristic
* Per leg, ** Per Device
Symbol Parameter Ratings Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 100 mJ
IFContinuous Rectified Forward Current @ TC < 148 °C 10* / 20** A
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25 °C, 10 μs 630 A
TC = 150 °C, 10 μs 560 A
IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 96 A
IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 46 A
Ptot Power Dissipation TC = 25 °C 150 W
TC = 150 °C 25 W
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TO247 Mounting Torque, M3 Screw 60 Ncm
Symbol Parameter Ratings Unit
RθJC Thermal Resistance, Junction to Case, Max 1* / 0.44** °C/W
12
3
TO-247
Long Lead
FFSH20120ADN_F155 Rev.1.3
FFSH20120ADN_F155 — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016 2www.onsemi.com
Package Marking and Ordering Information
Electrical Characteristics TC = 25 °C unless otherwise noted. (per leg)
Typical Characteristics TJ = 25 °C unless otherwise noted (per leg).
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFSH20120ADN_F155 FFSH20120ADN TO-247 Long Lead Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFForward Voltage
IF = 10 A, TC = 25 oC - 1.45 1.75
VIF = 10 A, TC = 125 oC-1.72
IF = 10 A, TC = 175 oC-22.4
IRReverse Current
VR = 1200 V, TC = 25 oC--200
μAVR = 1200 V, TC = 125 oC--300
VR = 1200 V, TC = 175 oC--400
QCTotal Capacitive Charge V = 800 V - 62 - nC
C Total Capacitance
VR = 1 V, f = 100 kHz - 612 -
pFVR = 400 V, f = 100 kHz - 58 -
VR = 800 V, f = 100 kHz - 47 -
Notes:
1: EAS of 100 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 20 A, V = 150 V.
01234
0
5
10
15
20
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = -55 oC
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
200 400 600 800 1000 1200
10-3
10-2
10-1
100
101
IR, REVERSE CURRENT (μA)
VR, REVERESE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = -55 oC
TJ = 25 oC
TJ = 75 oC
1000 1100 1200 1300 1400 1500
0.0
0.2
0.4
0.6
0.8
1.0
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = -55 oC
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
25 50 75 100 125 150 175
0
40
80
120
160 D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
FFSH20120ADN_F155 — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016 3www.onsemi.com
FFSH20120ADN_F155 Rev.1.3
Typical Characteristics TJ = 25 °C unless otherwise noted (per leg, continue).
Figure 5. Power Derating
Figure 6. Capacitive Charge vs.
Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy
Figure 9. Junction-to-Case Transient Thermal Response Curve
0 200 400 600 800 1000
0
20
40
60
80
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
25 50 75 100 125 150 175
0
50
100
150
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (oC)
0 200 400 600 800 1000
0
10
20
30
EC, CAPACITIVE ENERGY (μJ)
VR, REVERVE VOLTAGE (V)
0.1 1 10 100 1000
10
100
1000
5000
CAPACITANCE (pF)
VR, REVERESE VOLTAGE (V)
10-4 10-3 10-2 10-1 1
0.1
1
DUTY CIRCLE-DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
0.05
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZθJC(t) + TC
Reverse Voltage
FFSH20120ADN_F155 Rev.1.3
FFSH20120ADN_F155 — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016 4www.onsemi.com
Test Circuit and Waveforms
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5mH
15.87
15.37
E
20.82
20.32
E
3.93
3.69
E
20.25
19.75
E
1.60
5.56
11.12
5.20
4.96
1.35
1.17
5.58
5.34
E
4.13
3.53
1.87
1.53
(2X)
2.77
2.43
0.254
M
B A
M
0.254
M
B A
M
A
4.82
4.58
E
2.66
2.29
0.71
0.51
B
12.81
E
3.65
3.51
E
6.85
6.61
13.08 MIN
1.35
0.51
13
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247G03_REV02
1 3
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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