mur DIODES DE REDRESSEMENT RAPIDE VRWwM Iq @ VR TYPES le lo VRRM leRM | 'FSM VF (UA) (mA) ter Boitier = 10 ms |'F = lo tease tease Case (A) {A) Vral(v) (A) (A) (Vv) 25C 100C (ns) . 3 IF=1A VR =30V 12 A/ tease = 100C t(vj) = 150C t= 100 A?s IAM <2A 1, =0,2IRM di/gy=25A its * BYX 66 - 600, (R) 14 12 500 35 150 15 3 500 * BYX 66 - 600, (R) 14 12 600 35 150 15 3 500 * BYX 66 - 700, (R) 14 12 700 35 150 15 3 500 * BYX 66 - 800, (R) 14 12 800. 35 150 15 3 500 bo4 * BYX 66 - 900, (R) 14 12 900 35 150 15 3 500 * BYX 66 - 1000, (R) 14 12 1000 35 150 1.5 3 500 lp =1A VR = 30V 12 A/ tease = 100C t(vj) = 150C 12t= 100 A?s lam 2A rr =0,2IRM di/ge=25A/us * 1N 3889, (R) 14 12 50 35 150 | 1,4 25 3 200 * 1N 3890, (R) 14 12 100 35 150 | 1.4 25 3 200 * 1N 3891, (R) 14 12 200 35 150 | 1,4 25 3 200 * 1N 3892, (R) 14 12 300 35 150 | 1.4 25 3 200 DO4 * 1N 3893, (R) 14 12 400 35 150 | 1,4 25 3 200 * BYX62-600 ou GR612, (R) 14 12 600 35 150 | 1.4 25 3 350 * BYX62-800 ou GR812, (R) 14 12 800 35 150 | 1,4 25 3 350 20 A / 100C 150C It = 300 A? InM<2A 1 oztey t = t = t= s RM & = case (vj) dijge = 25 A/ps tT 071RM * 1N 3899, (R) 23,5 20 50 90 250 1,4 50 6 200 * 1N 3900, (R) 23,5 20 100 90 250 1,4 50 6 200 * 1N 3901, (R) 23,5 20 200 90 250 1,4 50 6 200 ; 1N 3902, (R) 23,6 20 300 90 | 250 | 14 50 6 200 pos ; ; 20 400 90 250 1.4 50 6 200 * BYX63-600 (R) 23,5 20 600 90 250 1.4 50 6 200 2 2 Fey Boa = i) = = | . ,21 30 A / tcase = 100C t(yj) = 150C I?t = 450 As ail M96 Als tr =0.21RM * BYX 65- 50, (R) 35 30 50 120 300 | 15 80 10 100 * BYX 65 - 100, (R) 35 30 100 4120 300 | 15 80 10 100 * BYX 65 - 200, (R) 35 30 200 120 300 | 15 80 10 100 DO 5 * BYX 65 - 300, (R) 35 30 300 120 300 | 15 80 10 100 * BYX 65 - 400, (R) 35 30 400 120 300 | 15 80 10 100 30 00C oc It = 450 A? RMSZA ly LOzIy = tiyi) = = t rs lpr = 0,21 RM A/ tease = 1 (vj) 15 t 5 s dig 28 Alps rr * BYX 67- 500, (R) 35 30 500 120 300 | 15 10 500 * BYX 67- 600, (R) 35 30 600 120 300 | 15 10 500 * BYX 67- 700, (R) 35 30 700 120 300 | 15 10 500 * BYX 67- 800, (R) 35 30 800 120 300 | 15 10 500 DOs * BYX 67- 900, (R) 35 30 900 120 300 | 15 10 500 * BYX 67 - 1000, (R) 35 30 1000 120 300 | 15 10 500 Ip=1A VR =30V 30 A / tease = 100C t(vj) = 150C I?t = 1.250 A?s la <2A ler = 0.2IRM di/ge = 25 A/us * 1N 3909, (A) 35 30 50 120 500 1,4 80 10 200 * 1N 3910, (R) 35 30 100 120 500 4 80 10 200 * 1N 3911; (R) 35 30 200 120 500 14 80 10 200 pO5 * 1N 3912, (R) 35 30 300 120 500 1.4 80 10 200 * 1N 3913, (R) 35 30 400 120 500 114 80 10 200 * BYX64-600, (R) 35 30 600 420 500 14 80 10 200 lge=IA VR =30v 40 A / tease = 75C t(yj) = 125C I?t = 1.800 A?s IRMS<2A | = cas (vj) dl/ gee 28 Alps tt = OZ 1RM *RPR 540, (R) 50 40 50 150 600 | 14 80 10 200 * RPR 1040, (R) 50 40 100 150 600 | 1.4 80 10 200 * RPR 2040, (R) 50 40 200 150 600 | 14 80 40 200 pO5 * RPR 3040, (R) 50 40 300 150 600 | 1,4 80 10 200 (AP) * RPR 4040, (R) 50 40 400 150 600 | 1.4 80 10 200 * Recouvrement progressif garanti * Soft recovery waranted n de type : cathode au boitier n de type + suffixe R : anode au boitier type number : cathode to case type number + suffix R : anode to case.