BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C Features * * * * Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) For Switching and AF Amplifier Applications Also Available in Lead Free Version SOT-23 A C B Mechanical Data * * * * * * * * * C Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 B TOP VIEW E D E Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 3 Pin Connections: See Diagram Marking Codes (See Table Below & Diagram on Page 3) Ordering & Date Code Information: See Page 3 Approx. Weight: 0.008 grams G H K J M L C D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm E B Marking Code (Note 2) Type Marking Type BC856A 3A, K3A BC857C 3G, K3G BC856B 3B, K3B BC858A 3J, K3J, K3A, K3V BC857A 3E, K3V, K3A BC858B 3K, K3K, K3B, K3W BC857B 3F, K3W, K3B BC858C 3L, K3L, K3G Maximum Ratings Marking @ TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Symbol Value Unit BC856 BC857 BC858 VCBO -80 -50 -30 V BC856 BC857 BC858 VCEO -65 -45 -30 V VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 C/W Tj, TSTG -65 to +150 C Emitter-Base Voltage Collector Current Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Current gain subgroup "C" is not available for BC856. DS11207 Rev. 14 - 2 1 of 4 www.diodes.com BC856A-BC858C a Diodes Incorporated Electrical Characteristics @ TA =25C unless otherwise specified Characteristic Symbol Min Typ Max Unit BC856 BC857 BC858 V(BR)CBO -80 -50 -30 -- -- -- -- -- -- V IC = 10mA, IB = 0 BC856 BC857 BC858 V(BR)CEO -65 -45 -30 -- -- -- -- -- -- V IC = 10mA, IB = 0 V(BR)EBO -5 -- -- V IE = 1mA, IC = 0 Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre -- -- -- -- -- -- -- -- -- -- -- -- 200 330 600 2.7 4.5 8.7 18 30 60 1.5x10-4 2x10-4 3x10-4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- kW kW kW S S S -- -- -- Current Gain Group A B C hFE 125 220 420 180 290 520 250 475 800 -- VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) -- -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) -- -- -700 -850 -- mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 -- -650 -- -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA ICES ICES ICES ICBO ICBO -- -- -- -- -- -- -- -- -- -- -15 -15 -15 -15 -4.0 nA nA nA nA A VCE = -80V VCE = -50V VCE = -30V VCB = -30V VCB = -30V, TA = 150C fT 100 200 -- MHz VCE = -5.0V, IC = -10mA, f = 100MHz CCBO -- 3 -- pF VCB = -10V, f = 1.0MHz NF -- 2 10 dB VCE = -5.0V, IC = 200A, RS = 2kW, f = 1kHz, Df = 200Hz Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) H-Parameters Small Signal Current Gain Input Impedance Output Admittance Reverse Voltage Transfer Ratio DC Current Gain (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: BC856 BC857 BC858 Test Condition VCE = -5.0V, IC = -2.0mA, f = 1.0kHz 3. Short duration pulse test used to minimize self-heating effect. DS11207 Rev. 14 - 2 2 of 4 www.diodes.com BC856A-BC858C Ordering Information Notes: (Note 4) Device Packaging Shipping BC85xx-7* SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datas heets/ap02007.pdf. *xx = device type, e.g. BC856A-7. 5. For Lead Free version (with Lead Free terminal finish) part number, please add "- F" suffix to part number above. Example: BC856A-7-F. YM Marking Information XXX XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 IC IB = 10 0.4 0.3 TA = 25C TA = 150C 0.2 0.1 TA = -50C 0 0 0 25 50 75 100 125 150 175 200 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS11207 Rev. 14 - 2 0.1 3 of 4 www.diodes.com BC856A-BC858C 1000 TA = 150C 100 VCE = 5V TA = 25C TA = -50C 10 ft, GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 5V 100 10 1 10 1 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current DS11207 Rev. 14 - 2 4 of 4 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current BC856A-BC858C