DS11207 Rev. 14 - 2 1 of 4 BC856A-BC858C
www.diodes.com ã Diodes Incorporated
BC856A - BC858C
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856.
Characteristic Symbol Value Unit
Collector-Base Voltage BC856
BC857
BC858
VCBO
-80
-50
-30
V
Collector-Emitter Voltage BC856
BC857
BC858
VCEO
-65
-45
-30
V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Marking Code (Note 2)
Type Marking Type Marking
BC856A 3A, K3A BC857C 3G, K3G
BC856B 3B, K3B BC858A 3J, K3J, K3A, K3V
BC857A 3E, K3V, K3A BC858B 3K, K3K, K3B, K3W
BC857B 3F, K3W, K3B BC858C 3L, K3L, K3G
Maximum Ratings @ TA = 25°C unless otherwise specified
Features
·Ideally Suited for Automatic Insertion
·Complementary NPN Types Available
(BC846-BC848)
·For Switching and AF Amplifier Applications
·Also Available in Lead Free Version
·Case: SOT-23, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 3
·Pin Connections: See Diagram
·Marking Codes (See Table Below & Diagram
on Page 3)
·Ordering & Date Code Information: See Page 3
·Approx. Weight: 0.008 grams
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
DS11207 Rev. 14 - 2 2 of 4 BC856A-BC858C
www.diodes.com
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CBO
-80
-50
-30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CEO
-65
-45
-30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1mA, IC = 0
H-Parameters
Small Signal Current Gain Current Gain Group A
B
C
Input Impedance Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
—
—
—
—
—
—
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10-4
2x10-4
3x10-4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
VCE = -5.0V, IC = -2.0mA,
f = 1.0kHz
DC Current Gain (Note 3) Current Gain Group A
B
C
hFE
125
220
420
180
290
520
250
475
800
—VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —-75
-250
-300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —
—
-700
-850 —mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
—
-650
—
-750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 3) BC856
BC857
BC858
ICES
ICES
ICES
ICBO
ICBO
—
—
—
—
—
—
—
—
—
—
-15
-15
-15
-15
-4.0
nA
nA
nA
nA
µA
VCE = -80V
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT100 200 — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO —3 —pF
VCB = -10V, f = 1.0MHz
Noise Figure NF — 2 10 dB
VCE = -5.0V, IC = 200µA,
RS = 2kW, f = 1kHz,
Df = 200Hz
Notes: 3. Short duration pulse test used to minimize self-heating effect.
@ TA =25°C unless otherwise specified
DS11207 Rev. 14 - 2 3 of 4 BC856A-BC858C
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Device Packaging Shipping
BC85xx-7* SOT-23 3000/Tape & Reel
Ordering Information (Note 4)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
01
0.1 10 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
T=25°C
A
T=-50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
=10
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datas heets/ap02007.pdf.
*xx = device type, e.g. BC856A-7.
5. For Lead Free version (with Lead Free terminal finish) part number, please add "- F" suffix to part number above.
Example: BC856A-7-F.
DS11207 Rev. 14 - 2 4 of 4 BC856A-BC858C
www.diodes.com
1
10
100
1000
110 100 1000
V = 5V
CE
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, DC Current Gain vs. Collector Current
T= 25°C
A
T = -50°C
A
T = 150°C
A
10
100
1000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
V= 5V
CE
