MRF3866, R1, R2
MRF3866G, R1, R2
Advanced Power Technology reserves the ri ght to change, wi
thout noti ce, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
* G Deno tes RoHS Compliant, Pb Free Terminal Finish
R1 suf f ix–T ape and Reel, 500 units
R2 suffix–T ape and Reel, 2500 units
DESCRIPTION: Des igned for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 30 Vdc
VCBO Co lle ctor-Base Voltage 55 Vdc
VEBO Emitter-Base Voltage 3.5 Vdc
ICColl ector Current 400 mA
Thermal Data
PDTotal Device Dissipation @ TC = 25ºC
Derat e above 25ºC 1.0
8Watts
mW/ ºC
SO-8
Features
•Low Cost SO-8 Plastic Surface Mount Package.
•S-Parameter Characterization
•Tape and Reel Packaging Options Available
•Maximum Ava ilable Gain = 17 dB @ 300 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE , PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF3866, R1, R2
MRF3866G, R1, R2
Advanced Power Technology reserves the ri ght to change, wi
thout noti ce, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCER Collector-Emitter Breakdown Voltage
(IC =
5.0 mAdc, IB = 0, rbe = 10 Ohms)
55 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 55 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc
ICEO Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - .02 mA
(on)
HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc) 5.0
10 -
-250
200
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz) -1.6 2.0 pF
Ftau Current-Gain Bandwidth Product
(IC = 50 m Adc, VCE = 15 Vdc, f = 200 MHz) 800 1000 -MHz
MRF3866, R1, R2
MRF3866G, R1, R2
Advanced Power Technology reserves the ri ght to change, wi
thout noti ce, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GU max Max imum Unilate ral Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz -15 -dB
MAG Maximum Available Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz -17 -dB
|S21|2Inse rtion Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz 11.5 12.5 -dB
Gpe Amplifier Power Gain
(VCC = 28 Vdc; POUT = 1 W; f = 400 MHz) 10 dB
ηCollec tor Efficiency
(VCC = 28 Vdc; POUT = 1 W; f = 400 MHz) 45 %
Table 1. Com mon Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .632 -164 12.94 93 .018 53 .315 -27
300 .683 -179 4.33 75 .039 61 .307 -29
500 .710 171 2.57 62 .056 61 .346 -43
700 .717 162 1.82 51 .071 62 .393 -58
1000 .715 158 1.24 36 .092 65 .455 -72
MRF3866, R1, R2
MRF3866G, R1, R2
Advanced Power Technology reserves the ri ght to change, wi
thout noti ce, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Pur pos e) Selection Gu ide
MA CRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MA CRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 855 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 855 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 855 12.5 16 400
MA CRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MA CRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 110 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 110 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 612 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
Ftau (MHz)
Ccb(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MA CRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5 812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
NPN
13.5 1500 70 400
RF (LNA / General Purpose) Selection Guide
2
3
4
1
2
3
4
1
85
Macro X
Power Macro
Macro T
SO-8
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Co st RF Plastic Package Options
MRF3866, R1, R2
MRF3866G, R1, R2
Advanced Power Technology reserves the ri ght to change, wi
thout noti ce, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005
1. 4.
8. 5.
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER