IRFWZ44/40 N-CHANNEL IRF1Z44/40 POWER MOSFETS FEATURES DPAK. Lower Ros(on) - Improved Inductive Ruggedness 7 + Fast switching times : + Rugged polysilicon gate cell structure J + Lower input capacitance - Extended safe operating area Improved high temperature reliability PRODUCT SUMMARY Part Number BVpss Rpsjon) Io IRFW2Z44/1Z44 60 0.0280 50A IRFWZ40/IZ40 50 0.0282 50A 1. Gate 2. Drain 3. Source IRFW244/40 P-PAK 4. Gate 2. Drain 3. Source IRFIZ44/40 ABSOLUTE MAXIMUM RATINGS og: IRFWZ44 IRFWZ40 F Characteristic Symbol IRFIZ44 IRFIZ40 Unit Drain-Source Voltage (1) Voss 60 50 Vde Drain-Gate Voltage (Ras=1M2 )(1) VDGR 60 50 Vde Gate-Source Voltage Vas +20 Adc Continuous Drain Current Tc=25 C ID 50 Adc Continuous Drain Current Tc=100 C ID 35 Adc Drain Current - Pulsed (3) {DM 200 Adc Single Pulsed Avalanche Energy (4) Eas 95 mJ Avalanche Current las 50 A Total Power Dissipation Tc=25 C. p 150 Watts D Derate Above 25 C 1.2 Ww/C Operating and Storage 5 | Tu, Tsta@ -55 to +175 Cc Junction Temperature Range Maximum Lead Temp. for Soldering TL 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (8) Repetitive rating : Pulse width limited by junction temperature (4) L= 50H, Vaa=25V, Re=250., Starting Ti=25C em ELECTRONICS MH 7964142 0029540 eth MeIRFW2Z44/40 N-CHANNEL IRF1IZ44/40 POWER MOSFETS ELECTRICAL CHARACTERISTICS (tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVoss | Drain-Source Breakdown Voltage IRFWZ44/iZ44 60 - - V_ | Vas=0V, ln=2504A IRFWZ40/1Z40 50 - - V Vestn) | Gate Threshold Voltage 2.0 - 4.0 V_ | Vos=Vas, Ip=2504A lass | Gate-Source Leakage Forward - - 100 | nA | Vas=20V lass | Gate-Source Leakage Reverse - - | -100] nA | Vas=-20V loss | Zero Gate Voltage Drain Current : - 250 | #A | Vos=Max. Rating, Ves=0V - - | 1000} A | Vos=0.8 Max. Rating, Vas=0V, Tc=150C Rosjon) | Static Drain-Source On - - | 0.028} 9 | Ves=10V, ID=25A Resistance(2) Qfs Forward Transconductance (2) 15 - - U_| Ves=50V, ID=25A Ciss Input Capacitance - | 2450) - pF Coss | Output Capacitance - 740 - pF | Vas=0V, Vos=25V, f=1MHz Crss Reverse Transfer Capacitance - 360 : pF tajon) | Turn-On Delay Time - - 32 ns | Voo=0.5 BVpss, lo=50A, Zo=9.10 tr Rise Time - - 210 | ns | (MOSFET switching times are essentially taf) | Turn-Off Delay Time : - 75 ns | independent of operating temperature) tt Fall Time - - 130 | ns Qg Total Gate Charge - - 100 | nC |} Ves=10V, Vos=50A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qgs Gate-Source Charge - - 21 nC | operating temperature) Qod Gate-Drain ("Miller") Charge - - 58 | nc THERMAL RESISTANCE i Symbol Characteristics i All Units Remark Rihuc Junction-to-Case MAX 1.0 KAV RihJa Junction-to-Ambient MAX 62.5 KW | Free Air Operation Notes : (1) Ti=25C to 175C (2) Pulse test : Pulse width < 300s, Duty Cycle <2% (3) Repetitive rating : Pulse width limited by max. junction temperature a ELECTRONICS Me 7964442 oo29s4, 1002 13 =araw ee IRFWZ44/40 N-CHANNEL IRF1Z44/40 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Continuous Source Current Is . - - 50 A | Modified MOSFET 5 (Body Diode) symbol showing the ma) ism Pulse Source Current ; _ | ool a integral reverse y (Body Diode) (3) P-N junction rectifier Vsb Diode Forward Voltage (2) - - 2.5 V | Ts=25C, is=50A, Vas=0V ter Reverse Recovery Time - - 250 | ns | Ty=25C, IF=50A, diF/dt=100A/eS Notes : (1) Tu=25C to 175C (2} Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. Junction temperature a ELECTRONICS 1003 mp 796414e O0e954e O79