Zowie Technology Corporation Monolithic Dual Switching Diode 3 ANODE 1 CATHODE BAV74 3 1 2 ANODE 2 SOT-23 MAXIMUM RATINGS Value Symbol Rating Unit Continuous Reverse Voltage VR 50 Vdc Peak Forward Current IF 200 mAdc IFM( surge ) 500 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic (1) Total Device Dissipation FR-5 Board o Derate above 25 C o TA=25 C Thermal Resistance, Junction to Ambient (2) Total Device Dissipation Alumina Substrate, o Derate above 25 C o TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C DEVICE MARKING BAV74=JA o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min. Max. Unit V(BR) 50 - Vdc VF - 1000 mVdc - 0.1 - 100 CJ - 2.0 pF trr - 4.0 nS OFF CHARACTERISTICS Reverse Breakdown Voltage ( IBR=5.0 uAdc ) Forward Voltage ( IF=100 mAdc ) Reverse Voltage Leakage Current ( VR=50 Vdc ) IR o ( VR=50 Vdc, TJ=125 C ) Diode Capacitance ( VR=0, f=1.0MHZ ) Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 ) uAdc (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. REV. : 0 Zowie Technology Corporation Zowie Technology Corporation BAV74 FIGURE 1. FORWARD VOLTAGE FIGURE 2. LEAKAGE CURRENT 10 100 o IR, REVERSE CURRENT ( uA ) IF, FORWARD CURRENT ( mA ) TA=150 C o TA=85 C o TA= -40 C 10 o TA=25 C 1.0 o TA=125 C 1.0 o TA=85 C 0.1 o TA=55 C 0.01 o TA=25 C 0.1 0.2 0.001 0.4 0.6 0.8 1.0 10 0 1.2 VF, FORWARD VOLTAGE ( VOLTS ) 20 30 40 50 VR, REVERSE VOLTAGE ( VOLTS ) FIGURE 3. CAPACITANCE DIODE CAPACITANCE ( pF ) 1.0 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE ( VOLTS ) REV. : 0 Zowie Technology Corporation