Zowie Technology Corporation
Monolithic Dual Switching Diode
BAV74 1
2
3
SOT-23
ANODE
ANODE
CATHODE
31
2
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Continuous Reverse Voltage VR50 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM( surge ) 500 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
VF
300
2.4
- 1000
mW
mW / oC
Thermal Resistance, Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
V(BR) 50 - Vdc
mVdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance, Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Forward Voltage ( IF=100 mAdc )
IR
( VR=50 Vdc )
( VR=50 Vdc, TJ=125oC )
-
-
0.1
100 uAdcReverse Voltage Leakage Current
Reverse Breakdown Voltage
( IBR=5.0 uAdc )
CJ- 2.0 pF
Diode Capacitance
( VR=0, f=1.0MHZ )
trr - 4.0 nS
BAV74=JA
-55 to +150 oCTJ,TSTG
Reverse Recovery Time
( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
REV. : 0
DIODE CAPACITANCE ( pF )
100
0.2 0.4
VF, FORWARD VOLTAGE ( VOLTS )
0.6 0.8 1.0
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE ( VOLTS )
1.0
0.1
0.01
0.001 10 20 30 40
1.0
02468
VR, REVERSE VOLTAGE ( VOLTS )
0.9
0.8
0.6
FIGURE 1. FORWARD VOLTAGE FIGURE 2. LEAKAGE CURRENT
FIGURE 3. CAPACITANCE
1.2
TA= -40oC
TA=25oC
TA=25oC
TA=55oC
TA=85oC
TA=125oC
TA=150oC
TA=85oC
50
0.7
IR, REVERSE CURRENT ( uA )
IF, FORWARD CURRENT ( mA )
Zowie Technology Corporation BAV74
