11/2006
AWM6432
3.3-3.6 GHz WiMAX Power Amplifier Module
PRELIMINARY DAT A SHEET - Rev 1.1
M18 Package
12 Pin 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
FEATURES
• 26.5 dB Gain
• +24 dBm Linear Output Power
• 2.3 % EVM (OFDM Modulation)
• +5 V to +6 V Supply
• High Efficiency
• Integrated S tep Attenuator
• Integrated Output Power Detector
•50Ω Matched RF Ports
• RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
APPLICATIONS
• WiMAX tranceivers that support the IEEE
802.16-2004 and ETSI EN301-021 standards
• Broadband Wireless Applications (BWA)
PRODUCT DESCRIPTION
The ANADIGICS AWM6432 WiMAX Power Amplifier
is a high performance device that delivers
exceptional linearity and efficiency at high levels of
output power. Designed to operate in the 3.5 GHz
band, it supports the IEEE 802.16-2004 and ETSI
EN301-021 wireless standards.
The device requires only a single +5 V to +6 V supply
and a low-current reference input. An integrated
detector can be used to monitor output power, and
an integrated 20 dB step attenuator enables gain
control. No external circuits are required for biasing
or RF impedance matching, thus reducing external
component costs and facilitating circuit board
designs.
The AWM6432 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability and ruggedness. It
is optimized for use in a 50 Ω system, and is offered
in a 4.5 mm x 4.5 mm x 1.4 mm surface mount
module.
Figure 1: Functional Block Diagram
Step
Attenuator
Power
Detector
Bias
Control
Supply
Voltage Supply
Voltage
Attenuator
Control Detector
Ouput
RF I nput RF Output
Matching
Network
Bias
Voltage Ground
AWM6432
AWM6432
2PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
Figure 2: Pinout (X-ray T op View)
T able 1: Pin Description
NIP EMAN NOITPIRCSED
1V
CC
egatloVylppuS
2FR
NI
tupnIFR
3DNGdnuorG
4V
SAIB
nwodtuhS/saiB
5V
CC
egatloVylppuS
6V
NTTA
lortnoCrotaunettA
7TEDtuptuOrotceteD
8DNGdnuorG
9DNGdnuorG
01FR
TUO
tuptuOFR
11DNGdnuorG
21V
CC
egatloVylppuS
V
CC
RF
OUT
V
BIAS
RF
IN
DET
GND
1
GND 10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
12
11
V
CC
V
ATTN
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
3
ELECTRICAL CHARACTERISTICS
T able 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not
implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely
affect reliability.
T able 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
RETEMARAP NIM PYT XAM TINU STNEMMOC
)f(ycneuqerFgnitarepO0033-0063 zHM
V(egatloVylppuS
CC
)0.5+-0.6+V
V(egatloVsaiB
SAIB
)9.2+00.3+ -1.3+ 7.0+ V"no"AP "nwodtuhs"AP
V(egatloVlortnoCrotaunettA
NTTA
)
hgiHcigoL woLcigoL 3.2+0-
-7.3+ 7.0+ VdelbanerotaunettA niaglanimoN
P(rewoPtuptuOFR
TUO
)-42+-mBd
T(erutarepmeTesaC
C
)04--58+C°
RETEMARAP NIM XAM TINU STNEMMOC
V(egatloVylppuS
CC
)05.6+V
V(egatloVsaiB
SAIB
)03.3+V
V(egatloVlortnoCrotaunettA
NTTA
)0 7.3+V
rewoPtupnIFR-0mBdlangisdetaludomMDFO
gnitaRDSE A1ssalC 3ssalC -
--
-MBH MDC
leveLLSM 3
4-
--
-532C°wolfeRkaeP
052C°wol
feRkaeP
erutarepmeTegarotS04-051+C°
4PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
T able 4: Electrical Specifications
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.6 GHz, 50 ΩΩ
ΩΩ
Ω system)
RETEMARAP NIM PYT XAM TINU STNEMMOC
niaG525.6203Bd
petSrotaunettA810222Bd
ksaMmurtcepSsteeMrewoPtuptuO42+-- mBdGepyT120-103NEISTE
MVE-3.25.2% PmBd42+ta
TUO
Bd1PtuptuO-13+- mBdWC
3PItuptuO-34+- mBd mBd12+,senotWCowt enotreptuptuo
scinomraH-02--mBdPmBd42+ta
TUO
ycneiciffEdeddA-rewoP-8.21-% PmBd42+ta
TUO
egatloVrotceteDrewoP PmBd42+ta
TUO
PmBd41+ta
TUO
-
-6.2+ 6.0+ -
-VdaolecnadepmihgiH
tnerruCtnecseiuQ-78021Am
noitpmusnoCtnerruC
V
CC
V
SAIB
V
NTTA
-
-
-
503 4.7 2.0
56380.1 Am P
TUO
mBd42+=
V3.3+=hgiHcigoL
tnerruCegakaeL-7.10.3AmV(nwodtuhsAP
SAIB
)V0=
Note:
1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
5
PERFORMANCE DA TA
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
f = 3.5 GHz, 54 Mbps OFDM Modulation)
Figure 4: Gain vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
POUT = +24 dBm, 54 Mbps OFDM Modulation)
Figure 5: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps
OFDM Modulation, system EVM Approx. 0.8 %)
Figure 6: Uncorrected EVM vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps
OFDM Modulation, system EVM Approx. 0.8 %)
Figure 7: Detector V oltage vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
f = 3.5 GHz, 54 Mbps OFDM Modulation)
Figure 8: Detector V oltage vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
54 Mbps OFDM Modulation)
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Gain (dB)
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
Gain (dB)
0
1
2
3
4
5
6
7
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
EVM (%)
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
Frequency
0
1
2
3
4
5
6
7
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
EVM (%)
+24 dBm
+23 dBm
+22 dBm
Output Power
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Detector Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
Detector Voltage (V)
+24 dBm +21 dBm
+18 dBm +15 dBm
Output Power
6PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
Figure 9: Effect s of Bias V oltage (VBIAS) on EVM
(TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbp s
OFDM Modulation, system EVM Approx. 0.8 %)
Figure 10: Effects of Supply V oltage (VCC) on EVM
(TC = +25 °C, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbp s
OFDM Modulation, system EVM Approx. 0.8 %)
Figure 1 1: Effects of Case T emperature on EVM
(VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps
OFDM Modulation, system EVM Approx. 0.8 %)
0
1
2
3
4
5
6
7
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
EVM (%)
+2.8 V
+2.9 V
+3.0 V
+3.1 V
Bias Voltage
0
1
2
3
4
5
6
7
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
EVM (%)
+5.0 V
+5.5 V
+6.0 V
Vcc
0
1
2
3
4
5
6
7
15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
EVM (%)
+85 deg C
+50 deg C
+25 deg C
0 deg C
-25 deg C
-40 deg C
Case Temperature
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
7
Figure 14: Supply Current vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
f = 3.5 GHz, 54 Mbps OFDM Modulation)
Figure 12: Gain vs. Bias V oltage (VBIAS)
(TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz,
54 Mbps OFDM Modulation)
Figure 13: Gain vs. Case T emperature
(VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz,
POUT = +23 dBm, 54 Mbps OFDM Modulation)
Figure 15: Supply Current vs. Case T emperature
(VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz,
POUT = +23 dBm 54 Mbps OFDM Modulation)
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15
Bias Voltage (V)
Gain (dB)
100
150
200
250
300
350
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Icc (mA)
200
220
240
260
280
300
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Case Temperature ( oC )
Icc (mA)
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Case Temperature (
o
C )
Gain (dB)
8PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
APPLICA TION INFORMA TION
T ransmit Disable and Attenuator Control
The power amplifier is disabled by setting VBIAS
below +0.7 V. The step attenuator is enabled by
Figure 16: Application Circuit
GND
at slug
RF IN 2
9
1
67
12
85
4
3
V
CC
V
BIAS
GNDRF
IN
GND
V
CC
GND
V
CC
GND
RF
OUT
V
CC
V
CC
RF OUT
V
ATTN
DET
V
CC
V
ATTN
DET
OUT
4.7 K
V
BIAS
10
11
2.2 µF
0.1 µF
0.01 µF1 µF2.2 µF
0.1 µF
100 pF
applying a logic high to VATTN; the P A exhibits nominal
gain when a logic low is applied to VATTN.
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
9
Figure 17: Land Pattern
10 PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
PACKAGE OUTLINE
Figure 18: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
AWM6432
11
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
12
AWM6432
REBMUNREDRO ERUTAREPMET EGNAR NOITPIRCSEDEGAKCAP GNIGAKCAPTNENOPMOC
8P81MR2346MWAC°58+otC°04- niP21tnailpmoc-SHoR mm4.1xmm5.4xmm5.4 eludoMtnuoMecafruS leeRd
naepaTeceip005,2
ORDERING INFORMA TION
