SPECIFICATION
(Reference sheet)
·
Supplier : Samsung electro-mechanics · Samsung P/N : CL21F224ZBCNNNC
·
Product : Multi-layer Ceramic Capacitor ·
Description : CAP, 220nF, 50V, -20/+80%, Y5V, 0805
CL 21 F224 Z B C N N N C
⑧⑨⑩⑪
Series Samsung Multi-layer Ceramic Capacitor
Size 0805 (inch code) L: 2.00 ± 0.10 ㎜ W: 1.25 ± 0.10 ㎜
Dielectric Y5V Inner electrode
Capacitance 220 Termination
Capacitance -20/+80 % Plating (Pb Free)
tolerance Product Normal
Rated Voltage 50 V Special Reserved for future use
Thickness 0.85 ± 0.10 ㎜ Packaging Cardboard Type, 7" reel
B. Structure & Dimension
A. Samsung Part Number
Ni
nF
Sn 100%
Samsung P/N
Dimension()
WLTBW
Cu
CL21F224ZBCNNNC 2.00 ± 0.10 1.25 ± 0.10 0.85 ± 0.10 0.50 +0.20/-0.30
1
C. Samsung Reliablility Test and Judgement Condition
Capacitance Within specified tolerance
Tan δ (DF) 0.05 max.
Insulation 10,000Mohm or 500Mohm×Rated Voltage 60~120 sec.
Resistance Whichever is smaller
Appearance No abnormal exterior appearance Microscope (×10)
Withstanding No dielectric breakdown or of the rated voltage
Voltage mechanical breakdown
Temperature Y5V
Characteristics (From-30 to 85, Capacitance change should be within -82~+22%)
Adhesive Strength No peeling shall be occur on the 500g·f, for 10±1 sec.
of Termination terminal electrode
Bending Strength Capacitance change : within ±30% Bending to the limit (1㎜)
with 1.0mm/sec.
Solderability More than 75% of terminal surface SnAg3.0Cu0.5 solder
is to be soldered newly 245±5, 3±0.3sec.
(preheating : 80~120 for 10~30sec.)
Resistance to Capacitance change : within ±20% Solder pot : 270±5, 10±1sec.
Soldering Heat Tan δ, IR : initial spec.
Vibration Test Capacitance change : within ± 20% Amplitude : 1.5mm
Tan δ, IR : initial spec. From 10 to 55 (return : 1min.)
2hours × 3 direction (x, y, z)
Moisture Capacitance change : within ±30% With rated voltage
Resistance Tan δ : 0.09 max 40±2, 90~95%RH, 500+12/-0hrs
IR : 500Mohm or 25Mohm ×
Whichever is smaller
High Temperature Capacitance change : within ±30% With of the rated voltage
Resistance Tan δ : 0.09 max Max. operating temperature
IR : 1,000Mohm or 50Mohm × 1000+48/-0hrs
Whichever is smaller
Temperature Capacitance change : within ±20% 1 cycle condition
Cycling Tan δ, IR : initial spec. Min. operating temperature 25
Max. operating temperature 25
5 cycle test
The reliability test condition can be replaced by the corresponding accelerated test condition.
D. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 260+0/-5, 10sec. Max )
Product specifications included in the specifications are effective as of March 1, 2013.
Please be advised that they are standard product specifications for reference only.
We may change, modify or discontinue the product specifications without notice at any time.
So, you need to approve the product specifications before placing an order.
Should you have any question regarding the product specifications,
please contact our sales personnel or application engineers.
250%
200%
Judgement Test condition
1 ±10% / 1.0±0.2Vrms
*A capacitor prior to measuring the capacitance is heat
treated at 150+0/-10 for 1 hour and maintained in
ambient air for 24±2 hours.
2
MLCC Pr
o
E. Recom
m
(Sub
s
Materi
a
Caution
o
duct Ma
m
ended T
E
strate for b
Si
z
l : Glass ep
: Copper
f
: Abnormal
nual
E
ST PCB
Size co
d
02
03
05
10
21
31
32
43
55
nding stren
z
e code
02
03
05
10
21
31
32
43
55
oxy substra
oil (T=0.03
ty can occu
( Adhesive
d
e Si
z
0.
0.
1.
0
1.
2.
0
3.
3.
4.
5.
gth test)
Size (mm)
0.4 × 0.2
0.6 × 0.3
1.0 × 0.5
1.6 × 0.8
2.0 × 1.25
3.2 × 1.6
3.2 × 2.5
4.5 × 3.2
5.7 × 5.0
e
5
)
r if lead-ba
s
strength of
z
e (mm)
.
4 × 0.2
.
6 × 0.3
0. × 0.5
.
6 × 0.8
0
× 1.25
.
2 × 1.6
.
2 × 2.5
.
5 × 3.2
.
7 × 5.0
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
3.5
4.5
hickness :
: S
o
ed solder (
d
b
termination
)
a
b
0.20 0.
1
0.30 0.
3
0.40 0.
5
1.00 1.
0
1.20 1.
4
2.20 1.
4
2.20 1.
4
3.50 1.
7
4.50 1.
7
(S
u
b c
0.6 0.
2
0.9 0.
3
1.5 0.
5
3.0 1.
2
4.0 1.
6
5.0 2.
0
5.0 2.
9
7.0 3.
7
8.0 5.
6
T
=1.6 (T=
o
lder resist
SD 6704)
)
b
c
1
70.26
3
00.30
5
50.50
0
01.20
4
01.65
4
02.00
4
02.90
7
53.70
7
55.60
u
bstrate for
R
d
2
5.0
3
5.0
5
5.0
2
5.0
6
55.0
0
5.0
9
5.0
7
5.0
6
5.0
0.8 for
0
ith 3% silve
Reliability t
e
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
0
3/05)
r
is used.
e
st)
e
a
c
3
MLCC Pr
o
1. Packa
g
This sp
e
When
c
1-1. Figur
1-2. Qua
n
Type
MLCC
o
duct Ma
g
ing
cification
ustomers r
e
n
tity
Size Code
Inch(mm)
0402 (01005)
0603 (0201)
1005 (0402)
1608 (0603)
2012 (0805)
3216 (1206)
3225 (1210)
4520 (1808)
4532 (1812)
5750 (2220)
nual
pplies to t
e
quire, the
s
Chip
Thickness
0.2 mm
0.3 mm
0.5 mm
0.8 mm
T≤0.85 mm
T≥1.0 mm
T≤0.85 mm
T≥1.0 mm
T≤1.6 mm
T≥2.0 mm
T≤1.6 mm
T≥2.0 mm
T≤2.0 mm
T>2.0 mm
T≥2.5 mm
ping of M
pecificatio
Tapin g Ty
p
PAPER
PAPER
PAPER
PAPER
PAPER
EMBOSSE
D
PAPER
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
EMBOSSE
D
L
CC
may be c
p
ePitch 7
2mm
2mm
2mm
4mm
4mm
D
4mm
4mm
D
4mm
D
4mm
D
4mm
D
8mm
D
8mm
D
8mm
D
8mm
D
8mm
h
anged un
d
Plastic
inches reel
20k
10K
10K
4K
4K
2K
4K
2K
2K
1K
2k
1k
-
-
-
er the agr
Plastic
10 inches reel
-
-
-
10K
10K
6K
10K
4K
4K
4K
-
-
-
-
-
e
ement.
[u
Plas
t
13 inch
e
100
K
50
K
50
K
15K /
1
15K /
1
10
K
10
K
10
K
10
K
4K
8k
4k
4K
2K
2K
nit:pcs]
t
ic
s reel
K
K
K
1
0K
1
0K
K
K
K
K
4
MLCC Product Manual
1-3. Tape Size
1-3-1. Cardboard(Paper) tape : 4mm pitch
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t
0603
(1608)
1.00
±0.10
1.90
±0.10
8.00
±0.30
3.50
±0.05
1.75
±0.10
4.00
±0.10
2.00
±0.05
4.00
±0.10
φ1.50
+0.10/-0
1.1
Below
0805
(2012)
1.55
±0.10
2.30
±0.10
1206
(3216)
2.05
±0.10
3.60
±0.10
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
1-3-2. Cardboard(Paper) tape : 2mm pitch
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t
01005
(0402)
0.25
±0.02
0.46
±0.02
8.00
±0.30
3.50
±0.05
1.75
±0.10
2.00
±0.05
2.00
±0.05
4.00
±0.10
φ1.50
+0.10
/-0.03
0.25
±0.02
0201
(0603)
0.38
±0.03
0.68
±0.03
0.35
±0.03
0402
(1005)
0.62
±0.05
1.12
±0.05
0.60
±0.05
0204
(0510)
0.62
+0.05
/-0.10
1.12
+0.05
/-0.10
0.37
±0.03
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
5
MLCC Product Manual
1-3-3. Embossed(Plastic) tape
[unit:mm]
Size
Inch(mm) A B W F E P1 P2 P0 D t1 t0
01005
(0402)
0.23
±0.02
0.45
±0.02
4.00
±0.05
1.80
±0.02
0.90
±0.05
1.00
±0.02
1.00
±0.02
2.00
±0.03
φ0.80
±0.04 0.35
Below
0.50
Below
015008
(05025)
0.32
±0.03
0.58
±0.03
8.00
±0.30
3.50
±0.05
1.75
±0.10
2.00
±0.05
2.00
±0.05
4.00
±0.10
φ1.50
+0.10
/-0.03
0603
(1608)
1.05
±0.15
1.90
±0.15
4.00
±0.10
φ1.50
+0.10
/-0
2.50
Below
0.60
Below
0805
(2012)
1.45
±0.20
2.30
±0.20
1206
(3216)
1.90
±0.20
3.50
±0.20
1210
(3225)
2.80
±0.20
3.60
±0.20
1808
(4520)
2.30
±0.20
4.90
±0.20
12.0
±0.30
5.60
±0.05
8.00
±0.10
3.80
Below
1812
(4532)
3.60
±0.20
4.90
±0.20
2220
(5750)
5.50
±0.20
6.20
±0.20
0204
(0510)
0.62
+0.05
/-0.10
1.12
+0.05
/-0.10 8.00
±0.30
3.50
±0.05
4.00
±0.10
2.50
Below
0306
(0816)
1.10
±0.20
1.90
±0.20
The A, B in the table above are based on normal dimensions. The data may be changed
with the special size tolerances.
6
MLCC Pr
o
1-3-4. Reel
Symbol
7”Reel
10”Reel
13”Reel
1-4. Cove
r
1-4-1. Peel
-
10 g
1-4-2. Mea
s
-Ta
p
(IE
* If t
o
duct Ma
Size
Tape Wid
t
4mm
8mm
12mm
8mm
8mm
12mm
tape pee
-
off force
.f peel-o
f
urement M
p
ing Packag
C 60286-3
P
he static el
nual
t
h A
φ178±2.
φ178±2.
φ178±2.
φ258±2.
φ330±2.
φ330±2.
l-off force
f
f force 7
0
ethod
ing design :
ackaging o
ctricity of S
B
0 MINφ50
0 MINφ50
0 MINφ50
0 MINφ70
0 MINφ70
0 MINφ70
0
g.f
Packaging
componen
T process
C
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
φ13±0.5
design follo
ts for auto
causes any
D
21±0.8
21±0.8
21±0.8
21±0.8
21±0.8
21±0.8
s IEC 602
atic handli
problems, p
E
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
8
6-3 standar
d
n
g - parts 3)
lease conta
W
5±0.5
10±1.5
13±0.5
10±1.5
10±1.5
13±0.5
d.
c
t us.
[unit:mm]
t
1.2±0.2
0.9±0.2
1.2±0.2
1.8±0.2
1.8±0.2
2.2±0.2
7
MLCC Pr
o
1-5. BOX
1-5-1. Pac
k
REE
L
Lab
e
1)
2)
3)
4)
5)
6)
1-5-2. Box
1) Dou
2) Avo
i
3) Re
m
If sp
1-5-3. 7" B
o
- Inner
- Oute
r
o
duct Ma
package
k
aging Label
L
& Box Typ
e
e
l includes t
h
Chip size
Tempe r a tur
Nominal C
Model Na
m
LOT Numb
Q’ty
Packaging
ble packagi
i
d any dam
a
m
ark informa
t
ecial packa
o
x packagin
g
r
Box (7" x 5
r
Box (7" x
2
nual
e
e informati
Characteri
a
pacitance
m
e
r & Reel N
g with the
a
ges during
t
ion of cont
ing is requi
g
REEL )
2
0 REEL)
o
n as below
.
s
tics
u
mber
paper type
ransportati
nts on inn
red, please
w
.
of inner bo
n by car, a
r box and
c
ontact us.
- I
-
and outer
rplane and
o
uter box
nner Box (7
"
-
Outer Box
b
ox.
s
hip.
"
x 10 REEL)
(7" x 60 RE
E
[ Unit :
m
E
L)
m
m ]
8
MLCC Product Manual
1-5-4. 13” Box packaging
- Inner Box (13" x 4 REEL) - Outer Bo
x (13" x 20 REEL)
1-6. Chip Weight
Size(L/W)
Inch(mm)
Size(T)
(mm) Temp. Weight
(mg/pc)
Size(L/W)
Inch(mm)
Size(T)
(mm) Temp. Weight
(mg/pc)
01005
(0402)
0.20 C0G 0.082 0201
(0603)
0.30 C0G 0.233
0.20 X7R 0.083 0.30 X7R 0.285
0.20 X5R 0.093 0.30 X5R 0.317
0402
(1005)
0.50 C0G 1.182 0603
(1608)
0.80 C0G 4.615
0.50 X7R 1.559 0.80 X7R 5.522
0.50 X5R 1.560 0.80 X5R 5.932
0805
(2012)
0.65 C0G 7.192 1206
(3216)
1.25 C0G 28.086
1.25 X7R 16.523 1.60 X7R 54.050
1.25 X5R 16.408 1.60 X5R 45.600
1210
(3225)
2.50 X7R 116.197 1808
(4520)
1.25 C0G 47.382
2.50 X5R 121.253 1.25 X7R 63.136
1812
(4532) 1.25 X7R 96.697 2220
(5750) 1.60 X7R 260.897
The weight of product is typical value per size, for more details, please contact us.
9
MLCC Product Manual
2. Product Characteristic data
2-1. Capacitance
The capacitance is the ratio of the change in an electric charge according to voltage change.
Due to the fact that the capacitance may be subject to change with the measured voltage and
frequency, it is highly recommended to measure the capacitance based on the following
conditions.
2-1-1. Measure capacitance with voltage and frequency specified in this document.
Regarding the voltage/frequency condition for capacitance measurement of each MLCC model,
please make sure to follow a section “C. Reliability test Condition - Capacitance” in this document.
The following table shows the voltage and frequency condition according to the capacitance
range.
[The voltage and frequency condition according to MLCC the capacitance range]
Class I
Capacitance Frequency Voltage
1,000 pF 1 MHz ± 10%
0.5 ~ 5 Vrms
> 1,000 pF 1 kHz ± 10%
Class II
Capacitance Frequency Voltage
10 1 kHz ± 10% 1.0 ± 0.2 Vrms
> 10 120 Hz ± 20% 0.5 ± 0.1 Vrms
Exception* 1 kHz ± 10% 0.5 ± 0.1 Vrms
Capacitance shall be measured after the heat treatment of 150+0/-10℃
for 1hr, leaving at room temperature for 24±2hr. (Class II)
2-1-2. It is recommended to use measurement equipment with the ALC (Auto Level Control) option.
The reason is that when capacitance or measurement frequency is high, the output voltage of
measurement equipment can be lower than the setting voltage due to the equipment limitation.
Note that when capacitance or measurement frequency is excessively high, the measurement
equipment may show ALC off warning and provide a lower output voltage than the setting
voltage even with ALC option selected. It is necessary to ensure the output voltage of
measurement equipment is the same as the setting voltage before measuring capacitance.
10
MLCC Product Manual
2-1-3. Capacitance value of high dielectric constant (Class II) MLCC changes with applied AC and DC
voltage. Therefore, it is necessary to take into account MLCC’s AC voltage characteristics and DC-
bias voltage characteristics when applying MLCC to the actual circuit.
2-1-4. The capacitance is in compliance with the EIA RS-198-1-F-2002.
2-2. Tan δ (DF)
2-2-1. An ideal MLCC’s energy loss is zero, but real MLCC has dielectric loss and resistance loss of
electrode. DF (Dissipation Factor) is defined as the ratio of loss energy to stored energy and
typically being calculated as percentage.
2-2-2. Quality factor (Q factor) is defined as the ratio of stored energy to loss energy.
The equation can be described as 1/DF. Normally the loss characteristic of Class I MLCC is
presented in Q, since the DF value is so small whereas the loss characteristic of Class II MLCC is
presented in DF.
2-2-3. It is recommended to use Class I MLCC for applications to require good linearity and low loss
such as coupling circuit, filter circuit and time constant circuit.
2-3. Insulation Resistance
Ceramic dielectric has a low leakage current with DC voltage due to the high insulating properties.
Insulation resistance is defined as the ratio of a leakage current to DC voltage.
2-3-1. When applying DC voltage to MLCC, a charging current and a leakage current flow together at
the initial stage of measurement. While the charging current decreases, and insulation resistance
(IR) in MLCC is saturated by time. Therefore, insulation resistance shall be measured 1 minute after
applying the rated voltage.
2-4. Capacitance Aging
The aging characteristic is that the high dielectric (Class II) MLCC decreases capacitance
value over time. It is also necessary to consider the aging characteristic with voltage and
temperature characteristics when Class II MLCC is used in circuitry.
11
MLCC Pr
o
2-4-1. In g
e
follo
w
diffe
2-4-2. Afte
r
sho
u
2-5. Tem
p
Pleas
e
capac
2-5-1. It is
Cha
r
[ Exam
o
duct Ma
neral, agin
w
ing graph.
rent models
heat treat
ld be consi
erature C
e
consider t
e
itance chan
necessary t
acteristics”
ple of Temp
* Sample
nual
g
causes ca
p
Please che
c
.
m
ent (150 °
C
ered again
aracterist
mperature
g
es which is
check the
f
or the tem
p
erature Cha
: 10uF, Rate
acitance to
k with SEM
, 1hour), th
from the ti
[ Example
* Sam
p
cs of Cap
haracteristi
caused by
alues speci
erature and
acteristics (
voltage 6.
decrease li
O for mor
capacitan
e of heat t
of Capacita
le : C0G, X
citance (
cs of capaci
a change in
fied in secti
o
capacitanc
5R) ]
3V *
early with t
e
details, sin
e decrease
reatment.
n
ce Aging ]
7
R, X5R
T
CC)
tance since
ceramic di
e
o
n “C. Relia
b
change ra
[ E
x
Sample : 10
e log of ti
e the valu
by aging i
the electric
lectric cons
ility test C
ge of MLC
ample of Bi
uF, Rated v
e as show
may vary
recovered,
a
l characteri
s
t
ant by tem
p
o
ndition–Te
m
C
.
a
s TCC ]
o
ltage 6.3V
n
in the
b
etween
so aging
tics such a
p
erature.
m
perature
s
12
MLCC Pr
o
2-5-2. Whe
tem
p
MLC
C
2-5-3. In a
d
2-6. Self-
h
It is
n
(Equi
2-6-1. Whe
or p
u
insul
2-6-2. The
circu
Ther
e
1) T
h
A
C
2) T
h
o
duct Ma
n selecting
erature an
C
.
d
dition, Bias
eating Te
ecessary t
valent Serie
n MLCC is
lse current
ating prope
reliability of
it, even the
fore, make
e surface t
or Pulse v
h
e rise in in
c
nual
MLCC, it is
TCC of ML
TCC of ML
mperature
design the
Resistance
sed in an A
flows throu
rties.
MLCC may
AC voltage
su
r
e to che
c
mperature
ltage is ap
rease by se
*
S
ecessary to
C
C, since th
e
C
C should b
e
system, wit
)
of MLCC
w
voltage o
h MLCC. S
be affected
o
r
the puls
e
k the follo
f MLCC m
p
lied.
l
f-heating o
f
[ Examp
ample : X5
consider t
applied te
taken into
considerin
hen AC vol
pulse volt
h
ort-circuit
m
by MLCC b
e
voltage is
ing conditi
st stay with
f
MLCC mus
t
le of Ripple
10uF, Rat
e heat char
m
perature
m
account wh
g self-heati
n
age or puls
ge circuit, s
m
ay be occ
u
ing used in
ithin the r
o
ns.
in the maxi
t
not excee
d
current ]
d voltage 6
cteristics o
ay change
en DC volta
n
g generate
d
voltage is
e
lf-heating i
u
rred by the
an AC volt
a
nge of rate
um operat
d
20℃
.
3V
f
a system,
r
the capacit
a
ge is applie
d
d
by the ES
R
applied to
s generated
degradatio
ge or puls
d voltage.
ing temper
oom
a
nce of
d
to MLCC.
R
M
LCC.
when AC
n
of M
L
CC’s
e
voltage
a
ture after
13
MLCC Pr
o
2-7. DC
&
It is
r
diele
c
2-7-1. Plea
s
parti
capa
char
a
2-7-2. It is
sinc
e
AC
v
o
duct Ma
&
AC Volta
g
equired to
tric consta
e ensure th
cular, when
citance tole
cteristics a
necessary t
the capaci
v
oltage.
nual
g
e Charac
t
onsider vol
n
t MLCC(Cla
e capacitan
high dielec
r
ance, a sys
t
d aging ch
*
consider t
ance value
[
E
*
S
t
eristics
age charac
ss II) is cha
n
e change i
ric constant
em should
a
racteristics
[ Example o
f
Sample : X5
e AC volta
f high diel
E
xample of
A
ample : X5
eristics in t
ged by ap
s
within the
type MLCC
e designe
of MLCC.
f DC Bias ch
a
R 10uF, Rate
e character
ctric const
A
C voltage
c
10uF, Rat
e circuit si
lied DC &
allowed op
e
(Class II) is
d
with consi
d
a
racteristics
]
d voltage 6.
istics of ML
nt type ML
haracteristi
d voltage 6
ce the capa
A
C voltage.
rating rang
used in circ
d
ering DC v
o
3
V
C and the
C (Class II)
c
s ]
.
3V
citance val
e
of a syste
m
u
it with nar
r
ltage, tem
C voltage
varies with
e of high
m
. In
ow allowed
p
erature
o
f a system,
the applied
14
MLCC Pr
o
2-8. Impe
Elect
r
curre
(Z=V
/
cons
i
Ther
e
MLC
C
2-8-1. MLC
incr
e
The
from
2-8-2. MLC
(Equ
i
freq
u
com
e
2-8-3. SRF
indu
c
2-8-4. The
Whe
imp
e
o
duct Ma
dance Cha
ical impeda
nt (I) when
I). Impeda
sting of the
fore, it is r
C
based on
t
C operates
ases ( X_C=
resistance (
the loss of
C operates
ivalent Seri
ency increa
s from the
(Self Reson
tive reacta
impedance
n using the
dance of lo
nual
racteristic
nce (Z) of
voltage (
ce extends
real part o
e
quired to d
e
he frequen
s a capacit
1/j2πfC ) w
E
SR; Equival
e
its dielectri
c
s an induc
s Inductanc
ses ( X_L=j
loss of its e
nt Frequen
ce(XL) canc
f MLCC ca
network an
a
capacitan
[
*
LCC is the
) is applied.
he concept
resistance
sign circuit
c
y ( Z = R +
r in the lo
ere f is fre
nt Series R
c
material.
or in the hi
). The reac
πf∙ESL ). Th
lectrode m
y) of MLCC
el each oth
be measu
lyzer, pleas
c
e caused b
Example of
I
Sample : X
easureme
It is define
of resistan
R) and the
with consi
jX )
frequency
uency and
sistance) o
h frequenc
ance (XL) o
resistance
e
tal.
is the freq
r and the i
ed by a ne
e note that
b
y the AC v
o
I
mpedance
c
R 1uF, Rate
t of the op
as the rati
c
e to AC ci
r
c
maginary p
d
eration of t
h
and its rea
is capacit
MLCC in t
and the i
MLCC in t
(ESR) of M
ency where
pedance
work analy
the small-si
g
ltage chara
haracteristic
voltage 6.3
osition tha
of the vol
uits and is
rt of reacta
e impedan
tance (XC)
a
nce.
h
e low frequ
e
ductance o
e high freq
CC in the h
its capaciti
f MLCC has
er or an im
g
nal input
m
teristic of
s
]
V
MLCC pre
age to the
complex n
nce (X) as
e characte
ecreases a
ency mainl
MLCC is c
uency incre
a
igh frequen
e reactanc
only ESR a
edance an
m
a
y
lead to
M
LCC.
s
ents to a
c
urrent
umber
Z
=R+jX.
r
istics of
s
frequenc
y
comes
a
lled ESL
a
ses as
c
y mainl
y
(XC) and
SRF.
a
lyzer.
t
he
15
MLCC Pr
o
3. Electri
c
3-1. Dera
t
MLC
C
are la
derat
e
test v
o
3-1-1. The
follo
w
3-1-2. The
MLC
C
give
s
defi
n
o
duct Ma
al & Me
t
ing
with the te
beled as “d
d as show
ltage at 15
derated ML
w
ing graph.
“Temperatu
C including
the maxim
ed in secti
nual
c
hanical
C
st voltage a
rated MLC
in the foll
0% of the r
C should
r
e of MLCC”
self-heating
um operati
o
n “3-2. App
[Exa
m
C
aution
100% of t
.” For this t
wing graph
ted voltag
e applied w
in the x-ax
i
effect. The
g voltage
lied Voltag
ple of dera
* Vmax
* Only the
D
e rated vol
pe of MLC
for the equ
in the hig
ith the dera
i
s of the gr
a
“Voltage D
f MLCC wit
e
.”
ting graph
Derated
erating ma
age in the
, the volta
ivalent life t
temperatu
ting voltag
ph below i
rating Rati
reference
or derated
Voltage
rked model
igh tempe
e and tem
ime of a no
r
e resistanc
and tempe
dicates the
o
” in the y-a
x
o the maxi
M
LCC]
s
ature resist
erature sho
rmal MLCC
e
test.
rature as sh
surface tem
x
is of the g
r
m
um voltag
e
a
nce test
uld be
w
ith the
own in the
perature of
r
aph below
(Vmax) as
16
MLCC Pr
o
3-2. Appl
i
The
a
3-2-1. Cau
t
·Fo
r
n
o
· Fo
r
sh
o
· Ab
n
M
L
DC V
o
3-2-2. Effe
c
· Ele
c
th
e
· Do
w
diel
e
abo
u
· Ple
a
pr
e
(1) Surg
e
Whe
n
indu
c
elect
r
surg
e
(2) ESD
Sinc
e
com
p
o
duct Ma
ed Voltag
ctual appli
ions by typ
DC voltag
t exceed th
AC voltage
uld not ex
ormal volt
L
CC.
o
ltage
t of EOS (El
trical Over
electrical
n time of
e
ctric shock
c
t a failure
se use cau
paring ML
e
the overc
e the overs
ical short f
e
current int
o
(Electrostati
the voltag
ared to the
nual
e
d voltage
s of voltag
or DC+AC
rated volt
or pulse v
eed the rat
ge such as
[Ty
p
AC Volta
ectrical Ove
tress such
hort failure
LCC is vari
aused by E
f MLCC in a
t
ion not to
a
C for testin
rrent cause
hooting ph
ilure in ML
o
MLCC.
Discharge)
of the stat
surge, ESD
n MLCC sh
applied to
voltage, DC
ge of MLC
ltage, the p
d voltage
surge volta
p
es of Volta
g
ge D
C
r
stress)
a
s a surge v
o
caused by t
ed with the
S can acc
market at
pply excess
or evaluat
by surge i
nomenon
C
C. Therefor
e
c electricity
can cause
uld not ex
MLCC
voltage or
C
.
ea
k
-to-pea
k
o
f MLCC.
e, static el
e Applied
+AC Volta
o
ltage or E
O
he dielectri
applied vol
lerate heati
he early sta
ive electrica
i
ng.
s applied to
f voltage as
e
, it is nece
s
is very hig
amage to
eed the rat
he maximu
value of A
ctricity sho
o the Capa
g
e 1 DC+
A
S can caus
breakdow
age and th
ng on the d
ge.
l overstress
MLCC, the
shown in t
sary to be
h
but the qu
LCC with l
e
d voltage s
value of
voltage or
ld not exce
c
itor]
C Voltage
e
damages t
o
n
in MLCC.
room tem
ielectric. Th
e
including s
influx of cur
e graph be
c
areful to pr
e
antity of el
o
w capacita
n
et in the sp
D
C + AC vol
pulse volta
ed the rate
2
DC+Pul
MLCC, res
p
erature an
d
refore, it c
ike voltage
rent into M
low and res
event the i
ctric charge
n
ce as show
n
e
cifications.
tage should
g
e
d
voltage of
se Voltage
ulting in
d
a
a
n bring
MLCC whe
L
CC can
ult in the
flux of
is small
n
in the
n
17
MLCC Pr
o
follo
w
high
[ E
x
3-3. Vibr
a
Plea
s
Man
a
Whe
and
3-4. Shoc
k
Mech
a
Do n
o
When
preve
n
3-5. Piez
o
MLCC
const
a
MLCC
o
duct Ma
ing graph,
capacitance
ample of S
a
tion
s
e check th
e
a
ge MLCC
n
n MLCC is
u
consider sp
e
k
nical stress
t use a dro
piling up
nt cracks or
o
-electric P
may gener
nt MLCC (
may cause
nual
whereas su
MLCC.
rge applied
e
types of vi
b
ot to gener
u
sed in a vib
cial MLCC
caused by
a
ped MLCC
r handling
any other
henomen
a
te a noise
d
lass Ⅱ) at
a noise if
M
ge with lot
to MLCC ]
b
ration and
te resonan
ration envir
s
uch as Soft
-
a
drop may
to avoid an
rinted circu
amages to
o
n
ue to vibra
C or Pulse
LCC is affec
of electric
shock, and
e and avoi
o
nment, ple
a
-
term, etc.
cause dam
y quality an
d
it boards, d
t
he MLCC.
tion at spe
c
ircuits.
ted by any
harge qua
[ Example
the status o
any kind
se make s
a
ges to a di
e
reliability
not hit M
ific frequen
echanical
tity can cau
of ESD appl
* Simulati
o
f
resonance.
o
f impact to
u
re to conta
c
e
lectric or a
eterioratio
CC with th
y when usi
ibrations o
se damage
ied to MLC
o
n for ESD
8
.
terminals.
t us for th
crack in ML
n
.
corners of
g the high
r shocks.
s
to even
C
]
8
kV
e
situation
C
C
a PCB to
dielectric
18