FDS4559S62Z - Fairchild Semiconductor Corporation

October 2000

2000 Fairc hild S emi c onduc tor Corporation FDS4559 Rev C(W)

FDS4559

60V Complementary PowerTrench



MOSFET

General Description

This complement ary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Power management

• LCD backlight inverter

Features

• Q1:N-Channel

4.5 A, 60 V RDS(on) = 0.055Ω=@ VGS = 10V

DS(on) = 0.075Ω=@ VGS = 4.5V

• Q2: P-Channel

–3.5 A, –60 V RDS(on) = 0.105Ω=@ VGS = –10V

DS(on) = 0.135Ω=@ VGS = –4.5V

SO-8

D1 D1 D2 D2

S1G1S2G2

Pin 1

SO-8

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

VDSS Drain-Source Voltage 60 –60 V

VGSS Gate-Source Voltage ±20 ±20 V

IDDrain Current - Continuous (Note 1a) 4.5 –3.5 A

- Pulsed 20 –20

PDPower Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.2

(Note 1c) 1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Am bient (Note 1a) 78 °C/W

RθJC Thermal Resistance, Junction-to-Cas e (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4559 FDS4559 13” 12mm 2500 units

FDS4559

FDS4559 Rev C(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BVDSS Drain-Sourc e B reakdown

Voltage VGS = 0 V, ID = 250 µA

VGS = 0 V, ID = –250 µA Q1

Q2 60

–60 V

∆BVDSS

===∆TJ

Breakdown Voltage

Temperature Coeffic i ent ID = 250 µA, Referenced to 25°C

ID = –250 µA, Referenced to 25°CQ1

Q2 58

–49 mV/°C

IDSS Zero Gate Voltage Drain

Current VDS = 48 V, VGS = 0 V

VDS = –48 V, VGS = 0 V Q1

Q2 1

–1 µA

IGSS Gate-Body Leakage VGS = +20 V, VDS = 0 V

VGS = +20 V, VDS = 0 V Q1

Q2 +100

+100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, I D = 250 µA

VDS = VGS, ID = –250 µA Q1

Q2 1

–1 2.2

–1.6 3

–3 V

∆VGS(th)

===∆TJ

Gate Threshold Voltage

Temperature Coeffic i ent ID = 250 µA, Referenced to 25°C

ID = –250 µA, Referenced to 25°CQ1

Q2 –5.5

4mV/°C

Q1 42

RDS(on) Static Drain-S ource

On-Resistance VGS = 10 V, ID = 4.5 A

VGS = 10 V, ID = 4.5 A, TJ = 125°C

VGS = 4.5 V, ID = 4 A

VGS = –10 V, ID = –3.5 A

VGS = –10 V, ID = –3.5 A, TJ = 125°C

VGS = –4.5 V, ID = –3.1 A

Q2 82

130

105

190

135

mΩ

ID(on) On-Stat e Drain Current VGS = 10 V, VDS = 5 V

VGS = –10 V, VDS = –5 V Q1

Q2 20

–20 A

gFS Forward Transconductance VDS = 10 V, ID = 4.5 A

VDS = –5 V, ID = –3 5 A Q1

Q2 14

Dynamic Cha racteristics

Ciss Input Capacitance Q1

Q2 650

759 pF

Coss Output Capacitance Q1

Q2 80

90 pF

Crss Reverse Transfer

Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VDS = –30 V, VGS = 0 V,

f = 1.0 MHz Q1

Q2 35

39 pF

Electrical Characteristics (continued) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time Q1

Q2 11

720

14 ns

trTurn-On Rise Time Q1

Q2 8

10 18

20 ns

td(off) Turn-Off Delay Time Q1

Q2 19

19 35

34 ns

tfTurn-Off Fall Time

VDD = 30 V, ID = 1 A,

VGS = 10V, RGEN = 6 Ω

VDD = –30 V, ID = –1 A,

VGS = –10 V, RGEN = 6 ΩQ1

Q2 6

12 15

22 ns

QgTotal Gate Charge Q1

Q2 12.5

15 18

21 nC

Qgs Gate-Source Charge Q1

Q2 2.4

2.5 nC

Qgd Gate-Drain Charge

VDS = 30 V, ID = 4.5 A, VGS = 10 V

VDS = –30 V, ID = –3.5 A, VGS = –10V Q1

Q2 2.6

3.0 nC

FDS4559

FDS4559 Rev C(W)

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current Q1

Q2 1.3

–1.3 A

VSD Drain-Source Di ode Forward

oltage VGS = 0 V, IS = 1.3 A (Note 2)

VGS = 0 V, IS = –1.3 A (Note 2) Q1

Q2 0.8

–0.8 1.2

–1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a

0.5 in2 pad of 2 oz

copper

b) 125°C/W when

mounted on a .02 in2

pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4559

FDS4559 Rev C(W)

Typical Characteristics: Q2

012345

-VDS, DRAIN-SOUR CE V O LTAGE (V)

-I

, DRAIN CURRENT (A

)

-6.0V

-5.0V

-4.5V

-3.5V

VGS = -10V

-4.0V

-2.5V

-3.0V

0.8

1.2

1.4

1.6

1.8

0246810

-ID, DRAIN CURRE NT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = -3.5V

-5.0V

-6.0V -7.0V -8.0V -10V

-4.5V

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TE MP E RATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANC

ID = -3.5A

VGS = -10V

0.1

0.2

0.3

0.4

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = -1.5A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

12345

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

TA = -55 oC25oC

125oC

VDS = -5V

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIO DE FO RWARD VOL TAG E (V)

-I

, REVERSE DRAIN CURRENT (A

)

VGS = 0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4559

FDS4559 Rev C(W)

Typical Characteristics: Q2

0481216

Qg, GATE CHARGE (nC)

-V

, GATE-SOURCE VOLTAGE (V)

ID = -3.0A VDS = 10V 20V

30V

200

400

600

800

1000

1200

0 102030405060

-VDS, DRAIN TO S OURCE VO LTAG E (V)

CAPACITANCE (pF)

CISS

COSS

CRSS

f = 1 M H z

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

DC10s1s

100ms

100µs

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

10ms

0.01 0.1 1 10 100 1000

t1, TIME (s e c )

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

FDS4559

FDS4559 Rev C(W)

Typical Characteristics: Q1

01234

VDS, DRAIN-SOURCE VOLTAGE (V)

, DRAIN-SOURCE CURRENT (A

)

VGS = 10V

6.0V

5.0V

4.5V

4.0V

3.5V

0.8

1.2

1.4

1.6

1.8

0 4 8 12 16 20

ID, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 4.0V

10V

5.0V

4.5V

6.0V 8.0V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANC

ID = 4.5A

VGS = 10V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

246810

VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = 2.3A

TA = 125oC

TA = 25oC

Figure 13. On-Resistance Variation with

Temperature. Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

123456

VGS, GATE TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A

)

TA = -55 oC25oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

, REVERSE DRAIN CURRENT (A

)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4559

FDS4559 Rev C(W)

Typical Characteristics: Q1

02468101214

Qg, GATE CHARGE (nC)

, GATE-SOURCE VOLTAGE (V)

ID = 4.5A VDS = 10V

20V

30V

100

200

300

400

500

600

700

800

900

0 102030405060

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

VDS, DRAIN- S O URCE VOLTAGE ( V )

, DRAIN CURRENT (A

)

DC 1s

100ms10ms 1m

100µs

VGS= 10V

SINGLE PULSE

RθJA= 135oC/W

TA= 25oC

RDS(ON) LIMIT

0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

RθJA(t) = r(t) + RθJA

RθJA = 135°C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS4559

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

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