MJE182 - ON Semiconductor - Datasheet.Live

January, 2006 − Rev. 9 1Publication Order Number:

MJE171/D

MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,

MJE182 (NPN)

Preferred Device

Complementary Plastic

Silicon Power Transistors

The MJE170/180 series is designed for low power audio amplifier

and low current, high speed switching applications.

Features

•Collector−Emitter Sustaining Voltage −

VCEO(sus) = 40 Vdc − MJE170, MJE180

= 60 Vdc − MJE171, MJE181

= 80 Vdc − MJE172, MJE182

•DC Current Gain −

hFE = 30 (Min) @ IC = 0.5 Adc

= 12 (Min) @ IC = 1.5 Adc

•Current−Gain − Bandwidth Product −

fT = 50 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages −

ICBO = 100 nA (Max) @ Rated VCB

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Machine Model, C

Human Body Model, 3B

•Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCB

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

80

100

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

VCEO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

40

60

80

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

− Peak

ÎÎÎÎ

IC

ÎÎÎÎ

3.0

6.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25_C

Derate above 25_C

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

PD

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.5

0.012

ÎÎÎ

Î

ÎÎÎ

W

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25_C

Derate above 25_C

ÎÎÎÎ

PD

ÎÎÎÎ

12.5

0.1

ÎÎÎ

W

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junc tion

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎ

−65 to +150

ÎÎÎ

_C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be

affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−225AA

CASE 77−09

STYLE 1

3 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

40 − 60 − 80 VOLTS

12.5 WATTS

321

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

YWW

JE1xxG

Y = Year

WW = Work Week

JE1xx = Specific Device Code

x = 70, 71, 72, 80, 81, or 82

G = Pb−Free Package

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 10 _C/W

Thermal Resistance, Junction−to−Ambient qJA 83.4 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage MJE170, MJE180

(IC = 10 mAdc, IB = 0) MJE171, MJE181

MJE172, MJE182

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

40

60

80

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) MJE170, MJE180

(VCB = 80 Vdc, IE = 0) MJE171, MJE181

(VCB = 100 Vdc, IE = 0) MJE172, MJE182

(VCB = 60 Vdc, IE = 0, TC = 150°C) MJE170, MJE180

(VCB = 80 Vdc, IE = 0, TC = 150°C) MJE171, MJE181

(VCB = 100 Vdc, IE = 0, TC = 150°C) MJE172, MJE182

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

0.1

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

0.1

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.5 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

50

30

12

ÎÎÎ

Î

ÎÎÎ

250

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

0.3

0.9

1.7

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

1.5

2.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎ

1.2

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (Note 1)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

fT

ÎÎÎ

Î

ÎÎÎ

50

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172

MJE181/MJE182

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

60

40

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

pF

1. fT = ⎪hfe⎪• ftest.

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

3

14

20

Figure 1. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

10

8.0

TC

6.0

12

PD, POWER DISSIPATION (WATTS)

2.8

0

2.0

1.6

TA

1.2

2.4

4.00.8

2.00.4

80 140

TC

TA

Figure 2. Switching Time Test Circuit

+11 V

25 ms

0

−9.0 V

RB

−4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE =

1.0%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

1K

IC, COLLECTOR CURRENT (AMPS)

VCE = 30 V

IC/IB = 10

VBE(off) = 4.0 V

TJ = 25°C

t, TIME (ns)

500

300

200

100

50

td

30

20

10

5

1

0.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn−On Time

3

2

5213

tr

NPN MJE181/182

PNP MJE171/172

0.02

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

qJC(t) = r(t) qJC

qJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

0 (SINGLE PULSE)

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

4

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.01 30

2.0

5.0

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 5. MJE171, MJE172

500ms

5.0ms

dc

1.0

2010 505.03.02.01.0 100

100ms

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.01

Figure 6. MJE181, MJE182

IC, COLLECTOR CURRENT (AMP)

MJE171

MJE172

0.02

0.05

0.2

0.5

302010 505.03.02.01.0 100

10

2.0

5.0

0.1

1.0

0.02

0.05

0.2

0.5

70

100ms

500ms

5.0ms dc

MJE181

MJE182

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

TJ = 150°C

7.0

ACTIVE−REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of

a transistor − average junction temperature and second

breakdown. Safe operating area curves indicate IC − V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) t 150°C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperature, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

10

5K

3K

2K

1K

500

300

200

100

50

Figure 7. Turn−Off Time

t, TIME (ns)

30

20

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 105213

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

VR, REVERSE VOLTAGE (VOLTS)

10 50

70

100

30

Figure 8. Capacitance

50

20105.03.02.01.00.5

C, CAPACITANCE (pF)

0.7

TJ = 25°C

Cib

Cob

NPN MJE181/182

PNP MJE171/172

PNP MJE171/MJE172

NPN MJE181/MJE182

20

307.0

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

5

ORDERING INFORMATION

Device Package Shipping

MJE170 TO−225

500 Units / Box

MJE170G TO−225

(Pb−Free)

MJE171 TO−225

MJE171G TO−225

(Pb−Free)

MJE172 TO−225

MJE172G TO−225

(Pb−Free)

MJE180 TO−225

MJE180G TO−225

(Pb−Free)

MJE181 TO−225

MJE181G TO−225

(Pb−Free)

MJE182 TO−225

MJE182G TO−225

(Pb−Free)

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

6

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A− M

K

FC

Q

H

V

G

S

D

JR

U

132

2 PL

M

A

M

0.25 (0.010) B M

M

A

M

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 −−− 1.02 −−−

__

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MJE171/D

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