Rectifier diode
1SR139-600
Applications Dimensions (Unit : mm)
General rectification
Features
1) Cylindrical mold. (MSR)
2) High reliability.
Construction
Silicon diffused junction
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRMS V
VRV
Io A
IFSM A
Tj C
Tstg C
Electrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.1 V IF=1.0A
Reverse current IR--10
AVR=600V
Parameter
Parameter Limits
Absolute peak reverse voltage 750
Reverse voltage (repetitive peak) 600
Average rectified forward current 1
Forward current surge peak (60Hz / 1cyc) 40
Junction temperature 150
Storage temperature -40 to +150
6
1/3 2010.04 - Rev.E
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1SR139-600 　
Electrical characteristics curves
0.001
0.01
0.1
1
0 200 400 600 800 1000 1200
Ta=-25C
Ta=150C
Ta=75C
Ta=25C
Ta=125C
1
10
100
1000
10000
100000
0 100 200 300 400 500 600
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
Ta=150C
1
10
100
0 5 10 15 20 25 30
0
50
100
150
200
250
300
900
910
920
930
940
950
AVE:926.8mV
0
50
100
150
AVE:64.0A
8.3ms
Ifsm 1cyc
0
50
100
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
012
Sin(θ=180)
D=1/2
DC
0
50
100
1 10 100
t
Ifsm
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(A)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
RESERVE RECOVERY TIME:trr(us)
f=1MHz
0
5
10
15
20
25
30
35
40
45
50
AVE:18.1pF
Ta=25C
f=1MHz
VR=0V
n=10pcs
Ta=25C
IF=1A
n=30pcs
1
10
100
1000
10000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
time(ms)
IF=0.5A
td=300us
IM=1mA
Mounted on epoxy board
Ta=25C
VR=600V
n=30pcs
AVE:30.86nA
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
AVE:1.869us
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
2/3 2010.04 - Rev.E
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
1SR139-600 　
0
0.01
0.02
0 100 200 300 400 500 600
Sin(θ=180)
D=1/2
DC
REVERSE POWER
DISSIPATION:PR (W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
TTj=150C
D=t/T
tVR
Io
V
R
=300V
0A
0V
Sin(θ=180)
D=1/2
DC
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
TTj=150C
D=t/T
tVR
Io
V
R
=300V
0A
0V
Sin(θ=180)
D=1/2
DC
0
5
10
15
20
25
30
C=200pF
R=0
C=100pF
R=1.5k
AVE:3.70kV
AVE:10.6kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3 2010.04 - Rev.E
Data Sheet
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R1010
A
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