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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. * 21 A, 30 V RDS(ON) = 35 m @ V GS = 10 V RDS(ON) = 50 m @ V GS = 4.5 V * Low gate charge (5nC typical) * Fast switching Applications * High performance trench technology for extremely low RDS(ON) * DC/DC converter * Motor drives . D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current PD V 20 V 21 A (Note 1a) 100 Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) TJ , TSTG Units 30 (Note 3) - Continuous - Pulsed Ratings Operating and Storage Junction Temperature Range W 1.3 -55 to +175 C Thermal Characteristics RJ C Thermal Resistance, Junction-to-Case (Note 1) 4.5 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6630A FDD6630A 13'' 16mm 2500 units 2011 Fairchild Semiconductor Corporation FDD6630A Rev. 1.6 FDD6630A March 2015 Symbol TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Ratings Test Conditions Min Typ Max Units (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, V DD = 15 V 55 mJ 7.6 A Off Characteristics BV DSS BV DSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient V GS = 0 V, ID = 250 A Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward V DS = 24 V, V GS = 20 V, V GS = 0 V V DS = 0 V 1 100 A nA IGSSR Gate-Body Leakage, Reverse V GS = -20 V, V DS = 0 V -100 nA 1.7 -4 3 V mV/C 28 40 44 35 50 58 m On Characteristics 30 ID = 250 A, Referenced to 25C V 23 mV/C (Note 2) V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS(th) V GS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = 5 V, ID = 7.6 A 13 S V DS = 15 V, f = 1.0 MHz V GS = 0 V, 462 pF 113 pF 40 pF = 10 V, ID = 7.6 A = 4.5 V, ID = 6.3 A = 10 V, ID = 7.6 A, TJ = 125C = 10 V, V DS = 5 V 1 20 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf (Note 2) V DD = 15 V, V GS = 10 V, ID = 1 A, RGEN = 6 5 11 ns 8 17 ns Turn-Off Delay Time 17 28 ns Turn-Off Fall Time 13 24 ns 5 7 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge V DS = 15 V, V GS = 5 V ID = 7.6 A, 2 nC 1.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.7 A Voltage 0.8 (Note 2) 2.7 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD RDS ( ON ) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6630A Rev. 1.6 FDD6630A Electrical Characteristics FDD6630A Typical Characteristics 3 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V ID, DRAIN CURRENT (A) 6.0V 5.0V 30 4.5V 4.0V 20 3.5V 10 3.0V V GS = 3.0V 2.5 3.5V 2 4.0V 4.5V 1.5 5.0V 6.0V 10V 1 0.5 0 0 1 2 3 4 0 5 5 10 Figure 1. On-Region Characteristics. 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.18 ID = 3.8 A I D = 7.6A V GS = 10V 1.6 R DS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 ID , DRAIN CURRENT (A) V DS , DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.15 0.12 T A = 125o C 0.09 0.06 T A = 25o C 0.03 0.6 -50 -25 0 25 50 75 100 125 150 0 175 2.5 T J, JUNCTION TEMPERATURE ( oC) Figure 3. On-Resistance Variation with Temperature. 3.5 4 4.5 V GS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 IS , REVERSE DRAIN CURRENT (A) T A = -55oC V DS = 5V 25oC 20 ID, DRAIN CURRENT (A) 3 125o C 15 10 5 V GS = 0V 10 TA = 125o C 1 25oC 0.1 -55o C 0.01 0.001 0 1 2 3 4 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6630A Rev. 1.6 FDD6630A Typical Characteristics 10 700 V DS = 5V 10V 8 f = 1MHz V GS = 0 V 600 15V CISS CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 6 4 500 400 300 200 COSS 2 100 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 1000 100s 100 ID, DRAIN CURRENT (A) 10 V DS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC V GS = 10V SINGLE PULSE R JA = 96o C/W 0.1 TA = 25 oC 0.01 SINGLE PULSE RJA = 96C/W T A = 25C 30 20 10 0 0.1 1 10 100 0.1 1 V DS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) x RJA R JA = 96 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P x RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6630A Rev. 1.6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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