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2011 Fairchild Semiconductor Corporation FDD6630A Rev. 1.6

FDD6630A

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed.

Applications

• DC/DC converter

• Motor drives

Features

• 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V

RDS(ON) = 50 mΩ @ VGS = 4.5 V

• Low gate charge (5nC typical)

• Fast switching

• High performance trench technology for extremely

low RDS(ON)

TO-252 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

ID Drain Current – Continuous (Note 3) 21 A

– Pulsed (Note 1a) 100

Power Dissipation (Note 1) 28

(Note 1a) 3.2

(Note 1b) 1.3

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6630A FDD6630A 13’’ 16mm 2500 units

FDD6630A

March 2015

FDD6630A Rev. 1.6

)ON(DS

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V 55 mJ

IAR Drain-Source Avalanche Current 7.6 A

Off Characteristics

BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V

∆BVDSS

∆TJ Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C 23 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA

IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V

∆VGS(th)

∆TJ Gate Threshold Voltage

Temperature Coefficient ID = 250 µA, Referenced to 25°C

–4 mV/°C

RDS(on) Static Drain–Source

On–Resistance VGS = 10 V, ID = 7.6 A

VGS = 4.5 V, ID = 6.3 A

VGS = 10 V, ID = 7.6 A, TJ = 125°C

mΩ

ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A

gFS Forward Transconductance VDS = 5 V, ID = 7.6 A 13 S

Dynamic Characteristics

Ciss Input Capacitance 462 pF

Coss Output Capacitance 113 pF

Crss Reverse Transfer Capacitance

VDS = 15 V, V GS = 0 V,

f = 1.0 MHz

40 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 5 11 ns

tr Turn–On Rise Time 8 17 ns

td(off) Turn–Off Delay Time 17 28 ns

tf Turn–Off Fall Time

VDD = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

13 24 ns

Qg Total Gate Charge 5 7 nC

Qgs Gate–Source Charge 2 nC

Qgd Gate–Drain Charge

VDS = 15 V, ID = 7.6 A,

VGS = 5 V

1.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.7 A

VSD Drain–Source Diode Forward

Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a

1in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

b) RθJA = 96°C/W when mounted

on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD6630A

FDD6630A Rev. 1.6

Typical Characteristics

0 1 2 3 4 5

VDS , DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

4.0V

3.0V

3.5V

4.5V

VGS = 10V

5.0V

6.0V

0.5

1.5

2.5

0 5 10 15 20 25 30

ID, DRAIN CURRENT (A)

RDS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 3.0V

4.0V

3.5V

10V

4.5V

5.0V 6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

RDS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = 7.6A

VGS = 10V

0.03

0.06

0.09

0.12

0.15

0.18

2.5 33.5 44.5 5

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON)

, ON-RESISTANCE (OHM)

ID = 3.8 A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

12345

VGS, GATE TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

TA = -55oC

25oC

125oC

VDS = 5V

0.001

0.01

0.1

100

00.2 0.4 0.6 0.8 11.2 1.4

VSD , BODY DIODE FORWARD VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD6630A

FDD6630A Rev. 1.6

Typical Characteristics

0 2 4 6 8 10

Qg, GATE CHARGE (nC)

VGS, GATE-SOURCE VOLTAGE (V)

ID = 7.6A VDS = 5V

15V

10V

100

200

300

400

500

600

700

0 5 10 15 20 25 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

1000

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

10s1s

100ms

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RθJA = 96oC/W

TA = 25oC

10ms 1ms

100µµs

0.1 1 10 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 96°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

RθJA(t) = r(t) x RθJA

RθJA = 96 °C/W

TJ - TA = P x RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD6630A

t1, TIME (sec)

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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