BF420/421 NPN/PNP HIGH VOLTAGE SILICON TRANSISTOR 4 TO-92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection circuits . E C ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 300V Emitter-Base Voltage VEBO 5V Collector Current . Ic 200mA Total Power Dissipation Ptot 830mW (mounted on a copper plate of length 3mm max and area lem2) Operating Junction & Storage Temperature Tj, Tstg -55 to +150C ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL | MIN MAX | UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 300 7 Ic=10pA IE=0 Collector-Emitter Breakdown Voltage | BVCEO | 300 Vv | IC=2.5mA B20 Emitter-Base Breakdown Voltage BVEBO 5 V IE=10nA IC=0 Collector Cutoff Current ICBO 10 nA VCB=200V IE=0 Emitter Cutoff Current IEBO 10 nA VEB=5V IC=0 D.C. Current Gain HFE 40 IC=25mA VCE=20V Current Gain-Bandwidth Product fT 60 MHZ Ic=10mA VCE=10V Output Capacitance Cob | 2.0typ pF | VCB=30V IE=0 f=1MHZ MICRO ELECTRONICS LID. 32#+4 R25] 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro Hx. P.O. Boxb9477, Kwun Tong. Tel: 3-430181-6, 3-893363--3-992423-3-898224+ FAX: 3410321 I~ BuP