SSM6N16FE
2017-07-11
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© 2001-2017
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications
Analog Switching Applications
Suitable for high-density mounting due to compact package
Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage V
DS
20 V
Gate-Source voltage VGSS
±10 V
Drain current DC
ID
100 mA
Pulse
I
DP
200
Drain power dissipation (Ta = 25°C)
(Note 1)
PD 150 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2N1D
Weight: 3.0 mg (typ.)
D S
6 5 4
1 2 3
Q1
Q2
6 5 4
1 2 3
Start of commercial production
2001-03
0.45 mm
0.3 mm
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© 2001-2017
Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ― ― ±1 μA
Drain-Source breakdown voltage V(BR)DSS ID = 0.1 mA, VGS = 0 V 20 ― ― V
Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ― ― 1 μA
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ― 1.1 V
Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 40 ― ― mS
Drain-Source ON resistance RDS(ON)
ID = 10 mA, VGS = 4 V ― 1.5 3.0
Ω
ID = 10 mA, VGS = 2.5 V ― 2.2 4.0
ID = 1 mA, VGS = 1.5 V ― 5.2 15
Input capacitance Ciss
VDS = 3 V, VGS = 0 V, f = 1 MHz
― 9.3 ― pF
Reverse transfer capacitance Crss ― 4.5 ― pF
Output capacitance Coss ― 9.8 ― pF
Switching time
Turn-on time ton VDD = 3 V, ID = 10 mA,
VGS = 0 to 2.5 V
― 70 ―
ns
Turn-off time toff ― 125 ―
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For
normal switching operation, VGS(on) requires higher voltage than Vth and VGS(off) requires lower voltage than Vth. (Relationship
can be established as follows: VGS(off) < Vth < VGS(on) )
Please take this into consideration for using the device.
(c) VOUT
(b) VIN
ton
90%
10%
0 V
2.5 V
10%
90%
toff
tr tf
VDD
VDS (ON)
VDD = 3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
OUT
IN
2.5 V
0
10 μs
50 Ω
RL
(a) Test circuit
SSM6N16FE
2017-07-11
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© 2001-2017
Toshiba Electronic Devices & Storage Corporation
(Q1, Q2 common)
I
D
– V
DS
I
D
– V
GS
R
DS(ON)
– I
D
R
DS(ON)
– V
GS
R
DS(ON)
– Ta
V
th
– Ta
Drain-Source voltage VDS (V) Gate-Source voltage VGS (V)
Drain current ID (mA)
Gate-Source voltage VGS (V)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Drain current ID
(mA)
Drain current ID
(mA)
Drain-
Source on resistance
R
DS (ON)
(Ω)
Drain-
Source on resistance
R
DS(ON)
(Ω)
Gate threshold voltage Vth
(V)
Drain-
Source on resistance
R
DS(ON)
(Ω)
2.5 V
VGS = 1.5 V
0
1
4
12
1000 10
2
6
8
100
Common source
Ta = 25°C
10
4 V
0
0
100
250
1 2 1.5 0.5
50
150
200
VGS = 1.3 V
1.5
1.7
1.9
Common source
Ta = 25°C
3
4
10
2.5
2.3
2.1
0 4 10 8 2 6
0
2
6
1
4
5
3
25°C
Ta = 100°C
-25°C
Common source
ID = 10 mA
0 2 3 1
0.01
1
1000
0.1
10
100
Ta = 100°C
Common source
VDS = 3 V
-25°C
25°C
0
2
8
6
4
2.5 V, 10 mA
VGS = 1.5 V, ID = 1 mA
Common source
-25 50 150 125 0 75 25 100
4 V, 10 mA
Common source
ID = 0.1 mA
VDS = 3 V
-25 50 150 125 0 75 25 100
0
0.4
2
1.2
1.6
0.8
SSM6N16FE
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© 2001-2017
Toshiba Electronic Devices & Storage Corporation
(Q1, Q2 common)
|Y
fs
| – I
D
I
DR
– V
DS
C – V
DS
t – I
D
P
D
* – Ta
Drain current ID (mA) Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
Drain current ID (mA)
Ambient temperature Ta (°C)
Drain reverse current IDR
(mA)
Forward transfer admittance
|Y
fs
| (mS)
Switching time t (ns)
Capacitance C (pF)
Drain power dissipation PD
* (mW)
1 10 100 1000
1
3
5
10
30
50
100
300
500
Common source
VDS = 3 V
Ta = 25°C
0.1 1 10 100
10
30
50
100
300
500
1000
3000
5000
Common source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
tr
ton
tf
toff
0
0
100
250
160 40
50
150
200
80 120
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm
Cu Pad: 0.135 mm2 × 6)
*: Total Rating
0
100
250
50
150
200
0 -1.4 -0.4 -0.2 -0.6 -0.8 -1 -1.2
Common source
VGS = 0 V
Ta = 25°C
G
D
S
IDR
Ciss
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
0.3
10
100
1
5
50
0.1 1 10 100 5 50 0.5
30
3
0.5
0.3 3 30
SSM6N16FE
2017-07-11
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© 2001-2017
Toshiba Electronic Devices & Storage Corporation
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