NTE60 (NPN) & NTE61 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO−3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
DHigh Safe Operating Area: 250W @ 50V
DFor Low Distortion Complementary Designs
DHigh DC Current Gain: hFE = 25 Min @ IC = 5A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) 140V.................................................
Collector−Base Voltage, VCBO 140V......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Continuous Collector Current, IC20A.....................................................
Continuous Base Current, IB5A..........................................................
Continuous Emitter Current, IE25A.......................................................
Total Power Dissipation (TC = +25C), PD250W...........................................
Derate Above 25C 1.43W/C......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.70C/W....................................
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL+265C................
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2 140 − − V
Collector Cutoff Current ICEX VCE = 140V, VBE(off) = 1.5V − − 100 A
VCE = 140V, VBE(off) = 1.5V, TC = +150C− − 2 mA
ICEO VCE = 140V, IB = 0 − − 250 A
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 100 A
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
IS/b VCE = 50V, t = 1s (non−repetitive) 5− − A
VCE = 100V, t = 1s (non−repetitive) 1− − A
ON Characteristics
DC Current Gain hFE VCE = 2V, IC = 5A 25 −150
Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA − − 1 V
Base−Emitter On Voltage VBE(on) VCE = 2V, IC = 5A −−2 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTVCE = 10V, IC = 500mA, ftest = 0.5MHz 2− − MHz
Output Capacitance Cob VCB = 10V, IE = 0, ftest = 1MHz − − 1000 pF
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
