MRF427 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45 L A FEATURES: * PG = 18 dB min. at 25 W/30 MHz * IMD3 = -34 dBc max. at 25 W (PEP) * OmnigoldTM Metalization System C E FULL R C B B E H E D G F I J MAXIMUM RATINGS 6.0 A IC 110 V VCBO VCEO 65 V VEBO 4.0 V MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 80 W @ TC = 25 C TJ -65 C to +200 C O C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 -65 C to +150 C JC 2.19 C/W CHARACTERISTICS F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K O TSTG MAXIMUM .125 / 3.18 B PDISS K DIM E L ORDER CODE: ASI10467 TC = 25 C NONETEST CONDITIONS SYMBOL O.125 NOM. MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 110 V BVCES IC = 100 mA 110 V BVCEO IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V Cob VCB = 50 V GP IMD3 VCE = 50 V IC = 500 mA 15 f = 1.0 MHz 18 POUT = 25 W (PEP) f = 30 MHz --- 60 pF -34 dB dBc 20 - 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 90 REV. A 1/1