Hardware Documentation Data Sheet CUR 3105 Hall-Effect Current Transducer Edition Oct. 12, 2009 SH000155_001EN CUR 3105 DATA SHEET Copyright, Warranty, and Limitation of Liability Micronas Patents The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Choppered Offset Compensation protected by Micronas patents no. US5260614A, US5406202A, EP0525235B1 and EP0548391B1. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. Sensor programming with VDD-Modulation protected by Micronas Patent No. EP 0 953 848. Third-Party Trademarks All brand and product names or company names may be trademarks of their respective companies. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET Contents Page Section Title 4 4 5 5 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Operating Junction Temperature Range (TJ) IC Package Codes Solderability and Welding Pin Connections and Short Descriptions 6 6 8 11 11 2. 2.1. 2.2. 2.3. 2.3.1. Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure 13 13 17 17 17 18 18 19 20 21 22 22 22 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.6.1. 3.7. 3.8. 3.9. 3.10. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Definition of Sensitivity Error ES Open-Circuit Detection Power-On Operation Overvoltage and Undervoltage Detection Magnetic Characteristics 23 23 23 23 24 4. 4.1. 4.2. 4.3. 4.4. Application Notes Application Circuit Use of two CUR3105 in Parallel Ambient Temperature EMC and ESD 25 25 25 27 28 28 31 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.5.1. Programming of the Current Transducer Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information 32 6. Data Sheet History Micronas Oct. 12, 2009; DSH000155_001EN 3 CUR 3105 DATA SHEET Hall-Effect Current Transducer 1.1. Features 1. Introduction - high-precision current transducer with ratiometric output and digital signal processing The CUR 3105 is a new current transducer based on the Hall effect. The IC can be used for very precise current measurements. The measured current is proportional to the analog output voltage driven by the sensors output. Major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The transducer has a ratiometric output characteristic, which means that the output voltage is proportional to the current and the supply voltage. It is possible to program different transducers which are in parallel to the same supply voltage individually. The CUR 3105 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the transducers accuracy. The CUR 3105 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (current). Individual adjustment of each transducer during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the IC and the mechanical positioning can be compensated in the final assembly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. - low output voltage drifts over temperature - 12-bit analog output - multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function - open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down resistor, overvoltage and undervoltage detection - for programming an individual transducer within several ICs in parallel to the same supply voltage, a selection can be done via the output pin - programmable clamping function - programming through modulation of the supply voltage - operates from -40 C up to 170 C junction temperature - operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V - operates with static magnetic fields and dynamic magnetic fields up to 1 kHz - overvoltage and reverse-voltage protection at all pins - magnetic characteristics extremely robust against mechanical stress - short-circuit protected push-pull output - EMC and ESD optimized design The calculation of the individual IC characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The transducer is designed for industrial, white goods and automotive applications and operates with typically 5 V supply voltage in the wide junction temperature range from -40 C up to 170 C. The CUR 3105 is available in the very small leaded packages TO92UT-1 and TO92UT-2. 4 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 1.2. Marking Code 1.5. Solderability and Welding The CUR 3105 has a marking on the package surface (branded side). This marking includes the name of the IC and the temperature range. Soldering Type CUR 3105 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Temperature Range A K I C 3105A 3105K 3105I 3105C 1.3. Operating Junction Temperature Range (TJ) The ICs from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C I: TJ = -20 C to +125 C C: TJ = 0 C to +85C Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.6. Pin Connections and Short Descriptions The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.3. on page 23. 1.4. IC Package Codes CURXXXXPA-T Pin No. Pin Name Type Short Description 1 VDD IN Supply Voltage and Programming Pin 2 GND 3 OUT Ground OUT Temperature Range: A, K, I and C Package: UT for TO92UT-1/-2 Type: 3105 1 Push Pull Output and Selection Pin VDD Example: CUR3105UT-K Type: 3105 Package: TO92UT Temperature Range: TJ = -40 C to +140 C The ICs are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". Micronas OUT 3 2 GND Fig. 1-1: Pin configuration Oct. 12, 2009; DSH000155_001EN 5 CUR 3105 DATA SHEET 2. Functional Description analog output is switched off during the communication. Several ICs in parallel to the same supply and ground line can be programmed individually. The selection of each IC is done via its output pin. The CUR3105 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage proportional to the magnetic field. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 8. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant and nonredundant EEPROM cells. The non-redundant EEPROM cells are only used to store production information inside the IC. In addition, the IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V up to 5.5 V, the transducer generates an analog output voltage. After detecting a command, the transducer reads or writes the memory and answers with a digital signal on the output pin. The CUR 3105 VDD 8 VOUT (V) 2.1. General Function 7 6 5 VDD digital OUT analog GND Fig. 2-1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Switched Hall Plate Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Open-circuit, Overvoltage, Undervoltage Detection D/A Converter Analog Output 50 Protection Devices 50 OUT EEPROM Memory Supply Level Detection Digital Output Lock Control Open-circuit Detection GND Fig. 2-2: CUR3105 block diagram 6 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET Digital Output 14 bit Digital Signal Processing A/D Converter Digital Filter Mode Register Filter Range 2 bit 1 bit Multiplier Sensitivity 14 bit Adder Limiter D/A Converter VOQ Min-Out Max-Out Lock Micronas 11 bit 8 bit 9 bit 1 bit Register Other: 5 bit EEPROM Memory Lock Control Fig. 2-3: Details of EEPROM and digital signal processing Micronas Oct. 12, 2009; DSH000155_001EN 7 CUR 3105 DATA SHEET 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this transducer and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter The EEPROM registers consist of four groups: Group 1 contains the registers for the adaption of the transducer to the magnetic field generated by the current to be measured: MODE for selecting the magnetic field range and filter frequency to select the bandwidth of the transducer. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the transducer is defined by these 4 parameters. - The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. - The parameter Sensitivity defines the magnetic sensitivity: V OUT Sensitivity = ----------------B converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the D/A-READOUT register. Depending on the programmable magnetic range of the transducer IC, the operating range of the A/D converter is from -30 mT...+30 mT up to - 100 mT...+100 mT. During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The D/A-READOUT at any given magnetic field depends on the programmed magnetic field range, the low-pass filter, TC values and CLAMP-LOW and CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383. Note: During application design, it should be taken into consideration that the maximum and minimum D/A-READOUT should not saturate in the operational range of the specific application. Range - The output voltage can be calculated as: The RANGE bits are bit 2 and 3 of the MODE register; they define the magnetic field range of the A/D converter. VOUT Sensitivity x B + V OQ The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the general purpose register GP. The GP Register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store informations like, Lot number, wafer number, x and y position of the die on the wafer, etc. This information can be readout by the customer and stored in it's on data base or it can stay in the IC as is. Magnetic Field Range RANGE -30mT...30 mT 0 -60 mT...60 mT 1 -80 mT...80 mT 2 -100 mT...100 mT 3 Group 4 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production. These registers are used for oscillator frequency trimming, A/D 8 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET Filter The FILTER bit is bit number 4 of the MODE register; it defines the -3 dB frequency of the digital low pass filter. -3 dB Frequency FILTER 500 Hz 0 1 kHz 1 Note: Please contact Micronas for further information about Multiplex Analog Output Mode. In Burn-In Mode, the signal path of the transducer DSP is stimulated internally without applied magnetic field. In this mode, the transducer provides a "saw tooth" shape output signal. Shape and frequency of the saw tooth signal depends on the programming of the transducer. This mode can be used for Burn-In test in the customers production line. Sensitivity Bit Time The BITTIME bit is bit number 5 of the MODE register; It defines the protocol bit time for the communication between the IC and the programmer board. Bit Time BITTIME 1:64 (Typ. 1.75 ms) 0 1:128 (Typ. 3.5 ms) 1 The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between -4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. For all calculations, the digital value from the magnetic field of the D/A converter is used. This digital information is readable from the D/A-READOUT register. V out x 16383 SENSITIVITY = --------------------------------------------------------2 DA-Readout VDD Output Format The OUTPUTMODE bits are the bits number 6 to 7 of the MODE register; They define the different output modes. Output Format OUTPUTMODE Analog Output (12 bit) 0 Internal Burn-In Mode 2 Multiplex Analog Output (external trigger) - VOQ The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT) and programmable from -VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: In Analog Output mode, the transducer provides an ratiometric 12-bit analog output voltage between 0 V and 5 V. V OUTmax = VOQ + VDD In Multiplex Analog Output mode, the IC transmits the LSN and MSN of the output value separately. This enables the IC to transmit a 14-bit signal. In external trigger mode the ECU can switch the output of the IC between LSN and MSN by changing current flow direction through IC output. In case the output is pulled up by a 10 k resistor the IC sends the MSN. If the output is pulled down the IC will send the LSN. Maximum refresh rate is about 500 Hz (2 ms). Three pins are sufficient. Micronas Oct. 12, 2009; DSH000155_001EN 9 CUR 3105 DATA SHEET Clamping Voltage D/A-READOUT The output voltage range can be clamped in order to detect failures like shorts to VDD or GND or an open circuit. This 14-bit register delivers the actual digital value of the applied magnetic field after the signal processing. This register can be read out and is the basis for the calibration procedure of the IC in the system environment. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 9.77 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 9.77 mV. Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. GP Register This register can be used to store some information, like production date or customer serial number. Micronas will store production Lot number, wafer number and x,y coordinates in three blocks of this registers. The total register contains of four blocks with a length of 13 bit each. The customer can read out this information and store it in his own production data base for reference or he can change them and store own production information. Note: To enable programming of the GP register bit 0 of the MODE register has to be set to 1. This register is not a guarantee for trace-ability. LOCKR By setting the first bit of this 2-bit register, all registers will be locked, and the IC will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Warning: This register cannot be reset! 10 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 2.3. Calibration Procedure Step 3: Define Calibration Points 2.3.1. General Procedure The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC3105) for the input of the register values. For the individual calibration of each transducer in the customer application, a two point adjustment is recommended. The calibration shall be done as follows: Step 1: Input of the registers which need not be adjusted individually The magnetic range (depending on the maximum field strength generated by the current), the filter frequency, the output mode and the GP Register value are given for this application. Therefore, the values of the following registers should be identical for all transducers of the customer application. - FILTER (according to the maximum signal frequency) - RANGE (according to the maximum magnetic field at the IC position) - OUTPUTMODE - GP (if the customer wants to store own production information. It is not necessary to change this register) Lowclampingvoltage VOUT1,2 Highclampingvoltage For highest accuracy of the transducer, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Step 4: Calculation of VOQ and Sensitivity Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1. Now, set the system to calibration point 2, read the register D/A-READOUT again, and get the value D/AREADOUT2. With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: 1 ( Vout2 - Vout1 ) 16384 Sensitivity = --- x --------------------------------------------------------------------------------- x --------------2 ( D/A-Readout2 - D/A-Readout1 ) 5 As the clamping voltages are given. They have an influence on the D/A-Readout value and have to be set therefore after the adjustment process. Write the appropriate settings into the CUR3105 registers. 1 Vout2 x 16384 V OQ = ------ x ------------------------------------- - 16 5 5 [ ( D/A-Readout2 - 8192 ) x Sensitivity x 2 ] x -----------1024 Step 2: Initialize DSP As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized with defined values, first: - VOQINITIAL = 2.5 V - SensitivityINITIAL = 0.5 - Clamp-Low = 0 V This calculation has to be done individually for each IC. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the transducer. At that time it is also possible to store the application specific values for Clamp-Low and Clamp-High into the ICs EEPROM. - Clamp-High = 4.999 V Micronas Oct. 12, 2009; DSH000155_001EN 11 CUR 3105 DATA SHEET The transducer is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from step 1 are overwritten in step 4. Step 5: Locking the Transducer The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The IC is now locked and does not respond to any programming or reading commands. Warning: This register can not be reset! 12 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g Micronas Oct. 12, 2009; DSH000155_001EN 13 CUR 3105 DATA SHEET Fig. 3-2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 14 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET Fig. 3-3: TO92UA/UT-2: Dimensions ammopack inline, not spread Micronas Oct. 12, 2009; DSH000155_001EN 15 CUR 3105 DATA SHEET Fig. 3-4: TO92UA/UT: Dimensions ammopack inline, spread 16 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Positions of Sensitive Areas TO92UT-1/-2 y 1.5 mm nominal A4 0.3 mm nominal Bd 0.3 mm H1 min. 22.0 mm, max. 24.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -8.5 8.5 V VDD Supply Voltage 1 -14.41) 2) 14.41) 2) V -IDD Reverse Supply Current 1 - 501) mA VOUT Output Voltage 3 -55) -55) 8.53) 14.43) 2) V VOUT - VDD Excess of Output Voltage over Supply Voltage 3,1 - 2 V IOUT Continuous Output Current 3 -10 10 mA tSh Output Short Circuit Duration 3 - 10 min TJ Junction Temperature Range -40 -40 1704) 150 C C NPROG Number of Programming Cycles - 100 1) 2) 3) 4) 5) as long as TJmax is not exceeded t < 10 min (VDDmin = -15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 1000h internal protection resistor = 50 Micronas Oct. 12, 2009; DSH000155_001EN 17 CUR 3105 DATA SHEET 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 4.5 5 5.5 V IOUT Continuous Output Current 3 -1.2 - 1.2 mA RL Load Resistor 3 5.0 10 - k CL Load Capacitance 3 0.33 10 1000 nF RL: Can be pull-up or pull-down resistor 18 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 3.6. Characteristics at TJ = -40 C to +170 C (for temperature type A), VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = -40 C to +140 C). Symbol Parameter Pin No. Min. Typ. Max. Unit IDD Supply Current over Temperature Range 1 - 7 10 mA Resolution 3 - 12 - bit ratiometric to VDD 1) Differential Non-Linearity of D/A Converter 3 -2.0 0 2.0 LSB Only at 25 C ambient temperature DNL Conditions Production test limit INL -0.5 3 ER Ratiometric Error of Output over Temperature (Error in VOUT / VDD) 3 -0.5 0 0.5 % VOUT1 - VOUT2 > 2 V during calibration procedure Voffset Offset Drift over Temperature Range VOUT(B = 0 mT)25C- VOUT(B = 0 mT)max 3 0 0.15 0.25 % VDD VDD = 5 V; 60 mT range, 3 dB frequency = 500 Hz, -0.6 < sensitivity < 0.6 TK Temperature Coefficient of Sensitivity 3 - 0 - ppm/k Variation see parameter ES ES Error in Magnetic Sensitivity over Temperature Range 3 -2 0 2 % VDD = 5 V; 60 mT range, 3 db frequency = 500 Hz (see Section 3.6.1. on page 20) VOUTCL Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range 3 -45 0 45 mV RL = 5 k, VDD = 5 V VOUTCH Accuracy of Output Voltage at Clamping High Voltage over Temperature Range 3 -45 0 45 mV RL = 5 k, VDD = 5 V VOUTH Upper Limit of Signal Band3) 3 4.65 4.8 - V VDD = 5 V, -1 mA IOUT 1mA VOUTL 3) Lower Limit of Signal Band 3 - 0.2 0.35 V VDD = 5 V, -1 mA IOUT 1mA fADC Internal ADC Frequency over Temperature Range - - 128 - kHz tr(O) Step Response Time of Output 3 - 3 2 5 4 ms ms 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax td(O) Delay Time of Output 3 - 0.1 0.5 ms CL = 10 nF tPOD Power-Up Time (Time to Reach Stabilized Output Voltage) - 1.5 1.7 1.9 ms CL = 10 nF, 90% of VOUT BW Small Signal Bandwidth (-3 dB) 3 - 1 - kHz BAC < 10 mT; 3 dB Filter frequency = 1 kHz VOUTn RMS Noise on Output Voltage 3 - 6 15 mV magnetic range = 60 mT4) 3 dB Filter frequency = 500 Hz Sensitivity 0.7; C = 4.7 nF (VDD & VOUT to GND) ROUT Output Resistance over Recommended Operating Range 3 - 1 10 VOUTLmax VOUT VOUTHmin 1) 0.5 % For Vout = 0.35 V ... 4.65 V; VDD = 5 V Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 2) if 3) 0 % of supply voltage2) Non-Linearity of Output Voltage over Temperature more than 50% of the selected magnetic field range is used and the temperature compensation is suitable Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH 4) peak-to-peak value exceeded: 5% Micronas Oct. 12, 2009; DSH000155_001EN 19 CUR 3105 Symbol DATA SHEET Parameter Pin No. Min. Typ. Max. Unit Conditions TO92UT Packages Thermal Resistance Rthja Junction to Air - - - 235 K/W Measured with a 1s0p board Rthjc Junction to Case - - - 61 K/W Measured with a 1s0p board Rthjs Junction to Solder Point - - - 128 K/W Measured with a 1s1p board 3.6.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: meas ES = max abs ------------ - 1 ideal [ Tmin, Tmax ] In the below example, the maximum error occurs at C: -10 1,001 ES = ------------- - 1 = 0.9% 0,992 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 C 2) normalized to achieve a value of 1 at 25 C 20 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET ideal 200 ppm/k 1.03 relative sensitivity related to 25 C value least-square-fit straight-line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 C 1.02 1.01 1.001 1.00 0.992 0.99 0.98 -50 -25 -10 0 25 50 75 100 temperature [C] 125 150 175 Fig. 3-5: ES definition example 3.7. Open-Circuit Detection at TJ = -40 C to +170 C (A-Type), Typical Characteristics for TJ = 25 C, after locking the sensor. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = -40 C to +140 C). Symbol Parameter Pin No. Min. Typ. Max. Unit Comment VOUT Output Voltage at Open VDD Line 3 0 0 0.15 V VDD = 5 V RL = 10 k to 200 k 0 0 0.2 V VDD = 5 V RL = 5 k to 10 k 4.85 4.9 5.0 V VDD = 5 V 10 k RL 200 k 4.8 4.9 5.0 V VDD = 5 V 5 k RL < 10 k VOUT Output Voltage at Open GND Line 3 RL: Can be pull-up or pull-down resistor Micronas Oct. 12, 2009; DSH000155_001EN 21 CUR 3105 DATA SHEET 3.8. Power-On Operation at TJ = -40 C to +170 C (A-Type), after programming and locking. Typical Characteristics for TJ = 25 C For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = -40 C to +140 C). Symbol Parameter Min. Typ. Max. Unit PORUP Power-On Reset Voltage (UP) - 3.4 - V PORDOWN Power-On Reset Voltage (DOWN) - 3.0 - V 3.9. Overvoltage and Undervoltage Detection at TJ = -40 C to +170 C (A-Type), Typical Characteristics for TJ = 25 C, after programming and locking For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = -40 C to +140 C). Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VDD,UV Undervoltage Detection Level 1 - 4.2 4.3 V 1) VDD,OV Overvoltage Detection Level 1 8.5 8.9 10.0 V 1) 1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (97% of VDD at RL = 10 k to GND). The CLAMP-LOW register has to be set to a voltage 200 mV. Note: The over- and undervoltage detection is activated only after locking the sensor! 3.10. Magnetic Characteristics at TJ = -40 C to +170 C (A-Type), VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = -40 C to +140 C). Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions BOffset Magnetic Offset 3 -0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 C, unadjusted sensor BOffset/T Magnetic Offset Change due to TJ -10 0 10 T/K B = 0 mT, IOUT = 0 mA 22 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 4. Application Notes VDD 4.1. Application Circuit OUT A & Select A For EMC protection, it is recommended to connect one ceramic 100 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 10 k resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. 10 nF CUR3105 Sensor B CUR3105 Sensor A 4.7 nF OUT B & Select B 4.7 nF GND Fig. 4-2: Parallel operation of two CUR3105 4.3. Ambient Temperature VDD Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). OUT C CUR3105 100 nF T J = T A + T 100 nF 4.7 nF GND 10 k At static conditions and continuous operation, the following equation applies: Fig. 4-1: Recommended application circuit 4.2. Use of two CUR3105 in Parallel T = IDD x V DD x R thJ Two different CUR3105 current transducers which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both ICs are inactivated by the "Deactivate" command on the common supply line. Then, the appropriate IC is activated by an "Activate" pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the "Deactivate" command is sent again, and the second IC can be selected. Note: The multi-programming of two transducers works only if the outputs of the two IC's are pulled to GND with a 10 k pull-down resistor. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the temperature difference T = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax - T Micronas Oct. 12, 2009; DSH000155_001EN 23 CUR 3105 DATA SHEET 4.4. EMC and ESD The CUR3105 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V on board system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling). Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 24 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 5. Programming of the Current Transducer - Read a register (see Fig. 5-3) After evaluating this command, the transducer answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. 5.1. Definition of Programming Pulses The transducer is addressed by modulating a serial telegram on the supply voltage. The transducer answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical "0" is coded as no voltage change within the bit time. A logical "1" is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. - Programming the EEPROM cells (see Fig. 5-4) After evaluating this command, the transducer answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. - Activate a transducer (see Fig. 5-5) If more than one transducer is connected to the supply line, selection can be done by first deactivating all transducers. The output of all transducers will be pulled to ground by the internal 10 k resistors. With an Activate pulse on the appropriate output pin, an individual transducer can be selected. All following commands will only be accepted from the activated transducer. 5.2. Definition of the Telegram tr Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). tf VDDH tp0 logical 0 tp0 or VDDL There are 4 kinds of telegrams: - Write a register (see Fig. 5-2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the transducer answers with an Acknowledge Bit (logical 0) on the output. tp1 VDDH tp0 logical 1 VDDL or tp0 tp1 Fig. 5-1: Definition of logical 0 and 1 bit Table 5-1: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit VDDL Supply Voltage for Low Level during Programming 1 5 5.6 6 V VDDH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise Time 1 - - 0.05 ms tf Fall Time 1 - - 0.05 ms tp0 Bit Time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit tpOUT Bit Time on Output Pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Voltage Change for Logical 1 1, 3 50 65 80 % % of tp0 or tpOUT VDDPROG Supply Voltage for Programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming Time for EEPROM 1 95 100 105 ms Micronas Oct. 12, 2009; DSH000155_001EN Remarks 25 CUR 3105 DATA SHEET Table 5-1: Telegram parameters, continued Symbol Parameter Pin Min. Typ. Max. Unit trp Rise Time of Programming Voltage 1 0.2 0.5 1 ms tfp Fall Time of Programming Voltage 1 0 - 1 ms tw Delay Time of Programming Voltage after Acknowledge 1 0.5 0.7 1 ms Vact Voltage for an Activate Pulse 3 3 4 5 V tact Duration of an Activate Pulse 3 0.05 0.1 0.2 ms Vout,deact Output Voltage after Deactivate Command 3 0 0.1 0.2 V Remarks WRITE Sync COM CP ADR AP DAT DP VDD Acknowledge VOUT Fig. 5-2: Telegram for coding a Write command READ Sync COM CP ADR AP VDD Acknowledge DAT DP VOUT Fig. 5-3: Telegram for coding a Read command trp tPROG tfp VDDPROG ERASE and PROM Sync COM CP ADR AP VDD Acknowledge VOUT tw Fig. 5-4: Telegram for coding the EEPROM programming 26 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET VACT tr tACT tf VOUT Fig. 5-5: Activate pulse Address Parity Bit (AP) 5.3. Telegram Codes This parity bit is "1" if the number of zeros within the 4 Address bits is uneven. The parity bit is "0" if the number of zeros is even. Sync Bit Data Bits (DAT) Each telegram starts with the Sync Bit. This logical "0" pulse defines the exact timing for tp0. The 14 Data Bits contain the register information. Command Bits (COM) The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for the CUR3105. In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. Command Parity Bit (CP) In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. This parity bit is "1" if the number of zeros within the 3 Command Bits is uneven. The parity bit is "0", if the number of zeros is even. Data Parity Bit (DP) This parity bit is "1" if the number of zeros within the binary number is even. The parity bit is "0" if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5-3 shows the available addresses for the CUR3105 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical "0" pulse defines the exact timing for tpOUT. Table 5-2: Available commands Command Code Explanation READ 2 read a register WRITE 3 write a register PROM 4 program all nonvolatile registers (except the lock bits) ERASE 5 erase all nonvolatile registers (except the lock bits) Micronas Oct. 12, 2009; DSH000155_001EN 27 CUR 3105 DATA SHEET 5.4. Number Formats VOQ - The register range is from -1024 up to 1023. Binary number: - The register value is calculated by: The most significant bit is given as first, the least significant bit as last digit. V OQ VOQ = ----------- x 1024 V DD Example: 101001 represents 41 decimal. SENSITIVITY Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: - The register value is calculated by: 0101001 represents +41 decimal 1101001 represents -41 decimal Two's complementary number: SENSITIVITY = Sensitivity x 2048 MODE The first digit of positive numbers is "0", the rest of the number is a binary number. Negative numbers start with "1". In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add "1". Example: - The register range is from -8192 up to 8191. 0101001 represents +41 decimal 1010111 represents -41 decimal - The register range is from 0 up to 255 and contains the settings for FILTER and RANGE: MODE = OUTPUTMODE x 32 + BITRATE x 16 + FILTER x 8 + RANGE x 2 + EnableProgGPRegisters D/A-READOUT 5.5. Register Information - This register is read only. - The register range is from 0 up to 16383. CLAMP-LOW - The register range is from 0 up to 255. DEACTIVATE - The register value is calculated by: - This register can only be written. LowClampingVoltage x 2 CLAMP-LOW = --------------------------------------------------------------- x 255 V DD - The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. - The transducer can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. CLAMP-HIGH - The register range is from 0 up to 511. - The register value is calculated by: HighClampingVoltage CLAMP-HIGH = ------------------------------------------------------ x 511 V DD 28 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET Table 5-3: Available register addresses Register Code Data Bits Format Customer Remark CLAMP-LOW 1 8 binary read/write/program Low clamping voltage CLAMP-HIGH 2 9 binary read/write/program High clamping voltage VOQ 3 11 two compl. binary read/write/program SENSITIVITY 4 14 signed binary read/write/program Range, filter, output mode, interface bit time settings MODE 5 8 binary read/write/program Range and filter settings LOCKR 6 2 binary read/write/program Lock Bit GP REGISTERS 1..3 8 13 binary read/write/program It is only possible to program this register if the mode register bit zero is set to 1. D/A-READOUT 9 14 binary read Bit sequence is reversed during read sequence. GP REGISTER 0 12 13 binary read/write/program It is only possible to program this register if the mode register bit zero is set to 1. DEACTIVATE 15 12 binary write Deactivate the transducer Micronas Oct. 12, 2009; DSH000155_001EN 29 CUR 3105 DATA SHEET Table 5-4: Data formats Char DAT3 DAT2 DAT1 DAT0 Register Bit 15 14 13 12 11 10 09 08 07 06 05 04 03 02 01 00 CLAMP LOW Write Read - - - - - V - V - V - V - V - V V V V V V - V - V - V - V - V - CLAMP HIGH Write Read - - - - - V - V - V - V - V V V V V V V V V V - V - V - V - V - VOQ Write Read - - - - - V - V - V V V V V V V V V V V V V V V V V V - V - V - SENSITIVITY Write Read - - - - V V V V V V V V V V V V V V V V V V V V V V V V V V V V MODE Write Read - - - - - V - V - V - V - V - V V V V V V - V - V - V - V - V - LOCKR Write Read - - - - - V - V - - - - - - - - - - - - - - - - - - - - V - V - GP 1..3 Registers Write Read - - - - - V V V V V V V V V V V V V V V V V V V V V V V V V V - D/AREADOUT Read - - V V V V V V V V V V V V V V GP 0 Register Write Read - - - - - V V V V V V V V V V V V V V V V V V V V V V V V V V - DEACTIVATE Write - - - - 1 0 0 0 0 0 0 0 1 1 1 1 V: valid, -: ignore, bit order: MSB first 30 Oct. 12, 2009; DSH000155_001EN Micronas CUR 3105 DATA SHEET 5.5.1. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. Note: To store data in the GP register it is necessary to set bit number 0 of the MODE register to one, before sending an ERASE and PROM command. Otherwise the data stored in the GP register will not be changed. If all registers of CUR3105 are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the transducer was successful. This means that the acknowledge and the parity bits sent by the transducer have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of CUR3105. The LOCK function is active after the next power-up of the transducer. The success of the Lock Process should be checked by reading at least one transducer register after locking and/or by an analog check of the transducers output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas Oct. 12, 2009; DSH000155_001EN 31 CUR 3105 DATA SHEET 6. Data Sheet History 1. Data Sheet: "CUR 3105 Hall-Effect Current Transducer", Oct. 12, 2009, DSH000155_001EN. First release of the data sheet. Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com 32 Oct. 12, 2009; DSH000155_001EN Micronas