VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 1Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Low Input Current,
4 Pin LSOP, Long Creepage Mini-Flat Package
DESCRIPTION
The VOL618A has a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 4 pin LSOP wide body
package.
It features a high current transfer ratio, low coupling
capacitance, and high isolation voltage.
The coupling device is designed for signal transmission
between two electrically separated circuits.
FEATURES
• Low profile package
• High collector emitter voltage, VCEO = 80 V
• Isolation test voltage, 5000 VRMS
• Isolation voltage VIORM = 1050 Vpeak
• Low coupling capacitance
• High common mode transient immunity
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•Telecom
• Industrial controls
• Battery powered equipment
• Office machines
• Programmable controllers
AGENCY APPROVALS
• UL1577, file no. E76222
• cUL CSA 22.2 bulletin 5A, double protection
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• BSI: EN 60065:2002, EN 60950-1:2006
• FIMKO EN60950-1
• CQC: GB8898, GB4943
E
CA
C
1
2
4
3
17295-6
ORDERING INFORMATION
VOL618A-#X001T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
1 mA
UL, cUL, BSI, FIMKO, CQC 63 to 125 100 to 200 160 to 320
4 pin LSOP, mini-flat, long creepage VOL618A-2T VOL618A-3T VOL618A-4T
UL, cUL, BSI, FIMKO, CQC, VDE (option 1) 63 to 125 100 to 200 160 to 320
4 pin LSOP, mini-flat, long creepage VOL618A-2X001T VOL618A-3X001T VOL618A-4X001T
LSOP
10.2 mm
VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 2Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Power dissipation Pdiss 100 mW
Forward current IF60 mA
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 80 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
tp/T = 0.5, tp < 10 ms IC100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj125 °C
COUPLER
Isolation test voltage
between emitter and detector VISO 5000 VRMS
Total power dissipation Ptot 250 mW
Storage temperature range Tstg - 55 to + 125 °C
Ambient temperature range Tamb - 55 to + 110 °C
Soldering temperature (1) ≤ 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 5 mA VF1.16 1.5 V
Capacitance VR = 0 V, f = 1 MHz CO45 pF
OUTPUT
Collector emitter leakage current VCE = 10 V, IF = 0 A ICEO 10 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7pF
COUPLER
Collector emitter saturation
voltage
IC = 0.32 mA, IF = 1 mA VOL618A-2 VCEsat 0.25 0.4 V
IC = 0.5 mA, IF = 1 mA VOL618A-3 VCEsat 0.25 0.4 V
IC = 0.8 mA, IF = 1 mA VOL618A-4 VCEsat 0.25 0.4 V
Coupling capacitance f = 1 MHz CC0.25 pF
0
50
100
150
200
250
300
0 20 40 60 80 100 120
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 3Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms
Note
• According to DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2, (see figure 4). This optocoupler is suitable for safe electrical isolation only within the
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFIF = 1 mA, VCE = 5 V
VOL618A-2 CTR 63 125 %
VOL618A-3 CTR 100 200 %
VOL618A-4 CTR 160 320 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn on time VCC = 5 V, IC = 2 mA, RL = 100 Ωton 6μs
Rise time VCC = 5 V, IC = 2 mA, RL = 100 Ωtr3.5 μs
Turn off time VCC = 5 V, IC = 2 mA, RL = 100 Ωtoff 5.5 μs
Fall time VCC = 5 V, IC = 2 mA, RL = 100 Ωtf5μs
isfh618a_10
Input
VOUT
VCC = 5 V
RL
isfh618a_12
10 %
90 %
Input pulse
Output pulse
tr
ton
tf
toff
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 2kV
peak
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 4)
VIOTM 8kV
peak
Vpd 1.68 kVpeak
Insulation voltage VIORM 1050 Vpeak
Insulation resistance
VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109Ω
Safety rating - maximum input current Isi 130 mA
Safety rating - maximum power dissipation PSO 265 mW
Rated impulse voltage VIOTM 8kV
Safety rating - maximum ambient temperature Tsi 150 °C
Clearance distance 8mm
Creepage distance 8mm
Insulation distance (internal) 0.4 mm
VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 4Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 6 - Forward Voltage vs. Forward Current
Fig. 7 - Collector Current vs. Collector Emitter Voltage
(non-saturated)
Fig. 8 - Collector Emitter Current vs. Ambient Temperature
Fig. 9 - Collector Current vs. Collector Emitter Voltage (saturated)
0 25 50 75 125
0
50
100
150
200
300
Tsi - Safety Temperature (°C)
150
100
250 Phototransistor
PSO (mW)
IR-diode
Isi (mA)
t
13930
t1
, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
Vpd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
0.1
1
10
100
0.6 0.8 1.0 1.2 1.4 1.6
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = - 55 °C
0.001
0.01
0.1
1
10
100
1000
10 000
- 60 - 40 - 20 0 20 40 60 80 100 120
ICE0 - Leakage Current (nA)
Tamb - Ambient Temperature (°C)
IF = 0 mA
VCE = 40 V
VCE = 24 V
VCE = 12 V
0
5
10
15
20
25
30
35
0.0 0.1 0.2 0.3 0.4
IC - Collector Current (mA)
VCE - Collector Emitter Voltage (V)
IF = 25 mA
IF = 10 mA
IF = 0.5 mA
IF = 2 mA
IF = 5 mA
IF = 1 mA
VOL618A
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Rev. 1.5, 17-Oct-12 5Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Normalized Current Transfer Ratio vs.
Ambient Temperature (saturated)
Fig. 11 - Normalized Current Transfer Ratio vs.
Ambient Temperature (non-saturated)
Fig. 12 - Current Transfer Ratio vs. Forward Current (saturated)
Normalized to 1 mA at 25 °C
Fig. 13 - Current Transfer Ratio vs. Forward Current (non-saturated)
Normalized to 1 mA at 25 °C
Fig. 14 - fCTR vs. Phase Angle
Fig. 15 - Cut-off Frequency (- 3 dB) vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
- 60 - 40 - 20 0 20 40 60 80 100 120
NCTR - Normalized CTR (sat)
Tamb - Ambient Temperature (°C)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
- 60 - 40 - 20 0 20 40 60 80 100 120
NCTR - Normalized CTR (non-saturated)
Tamb - Ambient Temperature (°C)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
0.1 1 10 100
NCTR - Normalized CTR (NS)
IF - Forward Current (mA)
Tamb = 0 °C
Tamb = 110 °C
Tamb = - 55 °C
Tamb = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1 10 100
NCTR - Normalized CTR (sat)
IF - Forward Current (mA)
Tamb = 0 °C
Tamb = - 55 °C
Tamb = 25 °C
Tamb = 110 °C
- 160
- 140
- 120
- 100
- 80
- 60
- 40
- 20
0
1 10 100 1000
Phase Angle (deg)
f - Cut-off Frequency (kHz)
VCE = 5 V
RL = 100 Ω
RL = 1000 Ω
1
10
100
1000
0.1 1 10 100
fCTR (kHz)
IC (mA)
VCC = 5 V
VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 6Document Number: 82405
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 16 - Switching Time vs. Load Resistance
Fig. 17 - Collector Emitter Saturation Voltage vs. Collector Current
Fig. 18 - Turn-On/Turn-Off Time vs. Forward Current
Fig. 19 - Voltage Gain vs. Cut-off Frequency
0.1
1
10
100
1000
0 5
10
15 20
t
on
,
toff
Switching Time (μs)
R
L
- Load Resistance (kΩ)
VCE
= 5 V, Ic = 2 mA
toff
(μs)
ton
(μs)
110
0
0.2
0.4
0.6
0.8
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
IC - Collector Current (mA)
100
CTR = 50 %
used
20 % used
95 11028
10 % used
01015
0
10
20
30
40
50
I
F
- Forward Current (mA)
20
95 11031
t
on
/t
off
- Turn-On/Turn-Off Time (µs)
Saturated operation
VS = 5 V
RL = 1 kΩ
toff
ton
5
- 40
- 35
- 30
- 25
- 20
- 15
- 10
- 5
0
1 10 100 1000
Voltage Gain
f - Cut-off Frequency (kHz)
VCE = 5 V
R
L
= 100 Ω
R
L
= 1000 Ω
VOL618A
www.vishay.com Vishay Semiconductors
Rev. 1.5, 17-Oct-12 7Document Number: 82405
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example of VOL618A-3X001T)
Notes
• Only option 1 is reflected in the package marking with the characters “X1”.
• Tape and reel suffix (T) is not part of the package marking.
TAPE AND REEL DIMENSIONS in millimeters
Fig. 20 - Reel Dimensions (3000 units per reel) Fig. 21 - Tape Dimensions
22533
7.50 ± 0.20
0.10 ± 0.10
0.70 + 0.30
- 0.40
technical drawings
according to DIN
specications
8.20
10.80
Possible footprint
2.54
0.90
4.10 max.
3.80
2.00
2.30 max.
2.54 nom.
Pin no. 1 identication
12
43
0.45 ± 0.1
+ 0.30
- 0.40
10.20
0.20 + 0.10
- 0.05
618A-3X1
V YWW 68
ESD sticker
Tape slot
in core
330
(13")
Regular, special
or bar code label
17999
22662
technical drawings
according to DIN
specification
4.25 8
2.3
24
2.7
0.3
16
7.5
10.6
Ø 1.55
1.75
Ø 1.6
5°
Direction of pulling out
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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