Fea tures
•Processed to Optek’s Space level
screening program patterned after
FSA/SCC Generic Specification 5000
•Miniature hermetically sealed package
•Ideal for direct mounting in PC boards
•Mechanically and spectrally matched
to the OP224 Series LED
Description
The OP604ESA consists of a high
reliability NPN silicon phototransistor
mounted in a miniature glass lensed,
hermetically sealed, “pill” package.
All devices are processed to Optek’s
program patterned after ESA/SCC
Generic Specification No. 5000. See
page 13-4 for details. This device type is
lensed and has an acceptance half angle
of 18o measured from the optical axis to
the half power point. The series is also
mechanically and spectrally matched to
Optek’s OP224 series high reliability
infrared emitting diode.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Stor age Tem pera ture Range ............................. -65o C to +150o C
Op er at ing Tem pera ture Range............................ -55o C to +125o C
Collector- Emitter Volt age ........................................... 50 V
Emitter- Collector Volt age........................................... 7.0 V
Sol der ing Tem pera ture (for 5 sec onds with sol der ing iron) ............. 240o C(1)
Power Dis si pa tion............................................. 50 mW(2)
Notes:
(1) No-clean or low solids RMA flux is recommended. Duration can be extended to 10 seconds
maximum when wave soldering.
(2) Derate linearly 0.5 mW/o C above 25o C.
(3) “X” defines the testing level per ESA/SCC Generic Specification 5000, Chart III. “X” will be
either “B” (full processing) or “C” (reduced processing).
“N” defines lot acceptance testing. “N” will be either 1, 2, or 3. Level 3 is the lowest defined
level with emphasis on electrical tests, solderability, and visual inspection. Level 2 requires
all tests of Level 3 and adds indurance testing (burn-in) with drift limits on key parameters.
Level 1 is the most stringent LAT level and includes all requirements of Levels 2 and 3 plus
additional testing for tolerance of thermal, mechanical, and environmental exposure.
Prod uct Bul le tin OP604ESA
Sep tem ber 1996
High Re li abil ity NPN Sili con Pho to tran sis tor
Type OP604ESA- XN(3)
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Part Num ber Guide
OP604ESA- XN
Op tek ESA/SCC Speci fi ca tion
High Re li abil ity No. 5000
“B” - Full Proc ess ing
“C” - Re duced Proc ess ing
Level ”1”
En vi ron men tal/Me chani cal
plus 2 & 3
Level “2” Life Test ing plus
Level 3
Level “3" Elec tri cal
In spec tion
13-32
Type OP604ESA-XN
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
Sym bol Pa rame ter Min Typ Max Units Test Con di tions
IC(ON) On-State Collector Current 7.0 mA VCE = 5.0 V, Ee = 20 mW/cm2(3)(4)
ICEO Collector Dark Current 25
100 nA
µAVCE = 10.0 V, Ee = 0
VCE = 30.0 V, Ee = 0, TA = 100o C
V(BR)CEO Collector-Emitter Breakdown Voltage 50 VIC = 100 µA, Ee = 0
V(BR)ECO Emitter-Collector Breakdown Voltage 7.0 VIE = 100 µA, Ee = 0
VCE(SAT) Collector-Emitter Saturation Voltage 0.40 VIC = 0.4 mA, Ee = 20 mW/cm2(3)(4)
trRise Time 20.0 µsVCC = 30 V, IC = 1.00 mA,
RL = 100 Ω
tfFall Time 20.0 µs
13-33
