Bipolar Transistor 1 2 3 Description: * * Pin Configuration: 1. Collector 2. Base 3. Emitter General Purpose NPN Silicon Planar Epitaxial Amplifier Transistors. This device is designed for general purpose amplifier application at collector currents to 100mA. Absolute Maximum Ratings (Tc=25C unless otherwise noted) Description Symbol Value Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 60 Emitter-Base Voltage VEBO 6 IC 100 mA Tj, Tstg - 55 to + 150 C Collector Current Continuous Operating and Storage Junction Temperature Range Unit V Electrical Characteristics (Tc = 25C unless specified otherwise) Parameter Symbol Test Condition Min. Typ. Max. Units Off Characteristics Collector-Emitter Breakdown Voltage V(br)ceo Ic = 2mA, Ib = 0 50 V Collector-Base Breakdown Voltage V(br)cbo Ic = 10A, Ie = 0 60 V Emitter-Base Breakdown Voltage V(br)ebo Ie = 10A, Ic = 0 6 V Collector Cut-off Current Icbo Vcb = 50V, Vbe = 0 15 nA Emitter-Base Leakage Current Iebo Veb = 4V, Ie = 0 15 nA hfe Vce = 5V, Ic = 10A Vce = 5V, Ic = 100mA Collector-Emitter Saturation Voltage Vce(sat) Ic = 10mA, Ib = 0.5mA Ic = 100mA, Ib = 5mA 0.25 0.6 V Base-Emitter Saturation Voltage Vbe(sat) Ic = 100mA, Ib = 5mA 1.2 V Base-Emitter On Voltage Vbe(on) Vce = 5V, Ic = 2mA 0.7 V On Characteristics DC Current Gain 40 80 0.55 www.element14.com www.farnell.com www.newark.com Page <1> 02/01/13 V1.0 Bipolar Transistor Electrical Characteristics (Tc = 25C unless specified otherwise) Parameter Symbol Test Condition Min. Typ. Max. Units Dynamic Characteristics Current Gain Bandwidth Product ft Vce = 5V, Ic = 10mA, f = 100MHz Output Capacitance Cob Vce = 10V, Ic = 0, f = 1MHz Small Signal Current Gain hfe Vce = 5V, Ic = 2mA, f = 1KHz Noise Figure NF Vce = 5V, Ic = 0.2mA Rs = 2K, f = 1KHz, BW = 200Hz 150 MHz 5 240 pF 500 10 dB Thermal Characteristics Ta=25C unless otherwise noted Parameter Symbol Max. Max. Pd 350 2.8 mW mW/C Thermal Resistance, Junction to Ambient RJA 357 mW/C Thermal Resistance, Junction to Case RJC 125 C/W Total Device Dissipation @Ta=25C Derate above 25C TO-92 Part Number Table Dimensions : Millimetres Description Part Number Transistor, NPN, TO-92 BC182B Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 02/01/13 V1.0