BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V IC = -100mA High Collector Current PD = 435mW Power Dissipation Case: X2-DFN0806-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 0.48mm2 Package Footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (Approximate) C X2-DFN0806-3 B B C E E Top View Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product BC857BFA-7B Notes: Marking 3W Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information X2-DFN0806-3 3W = Product Type Marking Code 3W Top View Bar Denotes Base and Emitter Side Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current BC857FA Document number: DS36019 Rev. 2 - 2 Symbol VCBO VCEO VEBO IC ICM 1 of 6 www.diodes.com Value -50 -45 -6.0 -100 -200 Unit V V V mA mA May 2017 (c) Diodes Incorporated BC857BFA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage and Temperature Range Symbol PD RJA RJL TJ, TSTG Value 435 287 150 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 200 JEDEC Class 3A B Unit V V 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information Max Power Dissipation (W) - IC Collector Current (A) 0.45 VCE(sat) Limited 100m DC 1s 100ms 10ms 10m 1ms Single Pulse T amb=25C 100m 100s 1 10 - VCE Collector-Emitter Voltage (V) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 20 Maximum Power (W) Thermal Resistance (C/W) 100 120 140 160 100 1k Single Pulse T amb=25C 100 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS36019 Rev. 2 - 2 80 Derating Curve Pulse Width (s) BC857FA 60 Temperature (C) Safe Operating Area 300 275 T amb=25C 250 225 200 175 D=0.5 150 125 100 D=0.2 Single Pulse 75 D=0.05 50 25 D=0.1 0 100 1m 10m 100m 1 10 40 2 of 6 www.diodes.com Pulse Power Dissipation May 2017 (c) Diodes Incorporated BC857BFA Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Collector-Base Breakdown Voltage Collector-Base Cut-Off Current Collector-Emitter Cut-Off Current ON CHARACTERISTICS (Note 8) Symbol Min Typical Max Unit BVCBO BVCES BVCEO BVEBO ICBO ICES -50 -50 -45 -6.0 -100 -90 -65 -8.5 -15 -15 V hFE 200 340 330 Collector-Emitter Saturation Voltage VCE(sat) -70 -300 470 -175 -500 Base-Emitter Saturation Voltage VBE(sat) -760 -885 -1,000 -1,100 mV Base-Emitter Voltage VBE(on) -600 -670 -715 -780 -850 mV Cobo 2.0 pF fT 100 340 MHz DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: V V nA nA mV Test Condition IC = -50A, IB = 0 IC = -50A, IB = 0 IC = -1mA, IB = 0 IE = -50A, IC = 0 VCB = -40V VCE = -40V IC = -10A, VCE = -5.0V IC = -2.0mA, VCE = -5.0V IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -2.0mA, VCE = -5V IC = -10mA, VCE = -5V VCB = -10.0V, f = 1.0MHz, IE = 0 VCE = -5V, IC = -10mA, f = 100MHz 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. BC857FA Document number: DS36019 Rev. 2 - 2 3 of 6 www.diodes.com May 2017 (c) Diodes Incorporated BC857BFA Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 600 0.18 IB = -2mA TA = 125C IB = -1.2mA 0.12 VCE = 5V 500 IB = -1.4mA -hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA 0.14 TA = 150C 550 IB = -1.8mA 0.16 IB = -1mA 0.10 IB = -0.8mA IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 450 TA = 85C 400 350 TA = 25C 300 250 200 TA = -55C 150 IB = -0.2mA 100 0.02 0 0 50 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 0 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150C 0.1 T A = 125C T A = 85C T A = 25C TA = -55C T A = 125C TA = 85C TA = 25C TA = -55C 0.01 0.1 0.01 0.1 1.0 1.2 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VCE = -5V 0.8 0.6 TA = -55C TA = 25C T A = 150C 0.4 0.2 0.1 TA = 125C TA = 85C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current BC857FA Document number: DS36019 Rev. 2 - 2 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) TA = 150C 0.1 4 of 6 www.diodes.com Gain = 10 1.0 0.8 0.6 TA = -55C TA = 25C TA = 150C TA = 125C 0.4 T A = 85C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current May 2017 (c) Diodes Incorporated BC857BFA Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. A3 A1 A Seating Plane D e L (2x) b (2x) K E E1 X2-DFN0806-3 Dim Min Max Typ A 0.375 0.40 0.39 A1 0 0.05 0.02 A3 0.10 b 0.10 0.20 0.15 D 0.55 0.65 0.60 D1 0.35 0.45 0.40 E 0.75 0.85 0.80 E1 0.20 0.30 0.25 e 0.35 K 0.20 L 0.20 0.30 0.25 All Dimensions in mm Pin#1 R0.075 D1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Y1 Dimensions Y2 X (2x) Y (2x) C X X1 X2 Y Y1 Y2 Value (in mm) 0.350 0.200 0.450 0.550 0.375 0.475 1.000 C X2 BC857FA Document number: DS36019 Rev. 2 - 2 5 of 6 www.diodes.com May 2017 (c) Diodes Incorporated BC857BFA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2017, Diodes Incorporated www.diodes.com BC857FA Document number: DS36019 Rev. 2 - 2 6 of 6 www.diodes.com May 2017 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: BC857BFA-7B