BC857FA
Document number: DS36019 Rev. 2 - 2
1 of 6
www.diodes.com
May 2017
© Diodes Incorporated
BC857BFA
45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806
Features
BVCEO > -45V
IC = -100mA High Collector Current
PD = 435mW Power Dissipation
0.48mm2 Package Footprint, 16 times smaller than SOT23
0.4mm Height Package Minimizing Off-Board Profile
Complementary NPN Type BC847BFA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu, Solderable per MIL-STD-202,
Method 208
Weight: 0.0008 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
BC857BFA-7B
3W
7
8mm
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0806-3
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-6.0
V
Continuous Collector Current
IC
-100
mA
Peak Pulse Collector Current
ICM
-200
mA
3W = Product Type Marking Code
Top View
Bar Denotes Base
and Emitter Side
3W
Top View
Device Schematic
Bottom View
X2-DFN0806-3
Device Symbol
C
E
B
Top View
C
E
B
e4
BC857FA
Document number: DS36019 Rev. 2 - 2
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May 2017
© Diodes Incorporated
BC857BFA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
435
mW
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
287
°C/W
Thermal Resistance, Junction to Lead (Note 6)
RJL
150
C/W
Operating and Storage and Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
200
V
B
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
100m 110
10m
100m
100µs
Single Pulse
Tamb=25°C
VCE(sat)
Limited
1ms
10ms
100ms
1s
DC
Safe Operating Area
- IC Collector Current (A)
- VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
25
50
75
100
125
150
175
200
225
250
275
300 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
BC857FA
Document number: DS36019 Rev. 2 - 2
3 of 6
www.diodes.com
May 2017
© Diodes Incorporated
BC857BFA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typical
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-50
-100
V
IC = -50µA, IB = 0
Collector-Emitter Breakdown Voltage
BVCES
-50
-90
IC = -50µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-45
-65
V
IC = -1mA, IB = 0
Collector-Base Breakdown Voltage
BVEBO
-6.0
-8.5
V
IE = -50µA, IC = 0
Collector-Base Cut-Off Current
ICBO
-15
nA
VCB = -40V
Collector-Emitter Cut-Off Current
ICES
-15
nA
VCE = -40V
ON CHARACTERISTICS (Note 8)
DC Current Gain
hFE
200
340
330
470
IC = -10µA, VCE = -5.0V
IC = -2.0mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(sat)
-70
-300
-175
-500
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-760
-885
-1,000
-1,100
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage
VBE(on)
-600
-670
-715
-780
-850
mV
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
2.0
pF
VCB = -10.0V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
100
340
MHz
VCE = -5V, IC = -10mA,
f = 100MHz
Notes: 8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
BC857FA
Document number: DS36019 Rev. 2 - 2
4 of 6
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May 2017
© Diodes Incorporated
BC857BFA
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0 1 2 3 4 5
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.18
-I , COLLECTOR CURRENT (A)
C
0.16 I = -2mA
B
I = -0.2mA
B
I = -0.4mA
B
I = -0.6mA
B
I = -0.8mA
B
I = -1.6mA
B
I = -1.4mA
B
I = -1.2mA
B
I = -1.8mA
B
I = -1mA
B
0
50
100
150
200
250
300
350
400
450
500
550
600
0 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
-h , DC CURRENT GAIN
FE
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V = 5V
CE
0.01
0.1
1
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V , COLLECTOR-EMITTER
SATURATION
CE(SAT) VOLTAGE (V)
T = -55°C
A
I /I = 10
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
-V , COLLECTOR-EMITTER
SATURATION
CE(SAT) VOLTAGE (V)
1
I /I = 20
CB
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 85°C
A
T = 125°C
A
0.2
0.4
0.6
0.8
1.0
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
V = -5V
CE
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
-V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
BC857FA
Document number: DS36019 Rev. 2 - 2
5 of 6
www.diodes.com
May 2017
© Diodes Incorporated
BC857BFA
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN0806-3
Dim
Min
Max
Typ
A
0.375
0.40
0.39
A1
0
0.05
0.02
A3
-
-
0.10
b
0.10
0.20
0.15
D
0.55
0.65
0.60
D1
0.35
0.45
0.40
E
0.75
0.85
0.80
E1
0.20
0.30
0.25
e
-
-
0.35
K
-
-
0.20
L
0.20
0.30
0.25
All Dimensions in mm
Dimensions
Value
(in mm)
C
0.350
X
0.200
X1
0.450
X2
0.550
Y
0.375
Y1
0.475
Y2
1.000
X1
X2
Y2
Y1
Y (2x)
X (2x)
C
AA3
Seating Plane
A1
D
Eb (2x)
L (2x)
e
D1
E1 Pin#1
R0.075
K
BC857FA
Document number: DS36019 Rev. 2 - 2
6 of 6
www.diodes.com
May 2017
© Diodes Incorporated
BC857BFA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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