FMMTL718
Document Number: DS33132 Rev. 2 - 2
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FMMTL718
20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23
Features and Benefits
BVCEO > -20V
I
C = -1A Continuous Collector Current
I
CM = -2A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -320mV @ -1A
h
FE characterised up to -1.5A for high current gain hold-up
500mW power dissipation
Complementary part number FMMTL618
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
UL Flammability Rating 94V-0
Case material: molded Plastic.
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Copper plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Applications
MOSFET Gate Driving
DC-DC Converters
Charging circuit
Power switches
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMTL718TA L78 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
L78 = Product Type Marking Cod e
C
E
B
Top View
SOT23
Device Symbol Top View
Pin
-
Out
FMMTL718
Document Number: DS33132 Rev. 2 - 2
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -1 A
Peak Pulse Current ICM -2 A
Base Current IB -200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 500 mW
Thermal Resistance, Junction to Ambient (Note 4) RθJA 250 °C/W
Thermal Resistance, Junction to Lead (Note 5) RθJL 197 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -20 -65 V
IC = -100 µA
Collector-Emitter Breakdown Voltage (Note 6) BVCEO -20 -55 V
IC = -10 mA
Emitter-Base Breakdown Voltage BVEBO -5 -8.8 V
IE = -100 µA
Collector Cutoff Current ICBO -10 nA
VCB = -15V
Emitter Cutoff Current IEBO -10 nA
VEB = -4V
Collector Emitter Cutoff Current ICES -10 nA
VCE= -15V
Static Forward Current Transfer Ratio
(Note 6) hFE
300
300
200
120
50
500
450
320
200
80
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -0.5A, VCE = -2V
IC = -1A, VCE = -2V
IC = -1.5A, VCE = -2V
Collector-Emitter Saturation Voltage
(Note 6) VCE(sat)
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
IC =- 100mA, IB = -10mA
IC =- 500mA, IB = -20mA
IC = -1A, IB = -50mA
IC = -1.5A, IB = -100mA
Base-Emitter Turn-On Voltage(Note 6) VBE
(
on
)
-0.85 -1.0 V
IC = -1.25A, VCE = -2V
Base-Emitter Saturation Voltage(Note 6) VBE
(
sat
)
-0.95 -1.1 V
IC = -1.25A, IB = -100mA
Equivalent On-Resistance RCE
(
sat
)
210 m I
C = -1.5A
Output Capacitance Cobo 9 12 pF
VCB = -10V, f = 1MHz
Transition Frequency fT 265 MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Turn-On Time ton 108 ns
VCC=-10V, IC =-1A
IB1 = IB2 = -10mA
Turn-Off Time toff 121 ns
Note: 6.
Measured under pulsed conditions. Pulse width 300 µs. Duty cycle 2%
FMMTL718
Document Number: DS33132 Rev. 2 - 2
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Typical Electrical Characteristics
FMMTL718
Document Number: DS33132 Rev. 2 - 2
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Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
FMMTL718
Document Number: DS33132 Rev. 2 - 2
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express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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the labeling can be reasonably expected to result in significant injury to the user.
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