1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
18
123
Type
Code
2.1
±0.1
2
±0.1
0.9
±0.1
1.25
±0.1
465
6.5 6.5
2.4
BC856S ... BC858S General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-04-09
Dimensions / Maße in mm Power dissipation – Verlustleistung 310 mW
Plastic case SOT-363
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2 Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC856S BC857S BC858S
Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V
Collector-Base-voltage E open - VCB0 80 V 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 310 mW 1)
Collector current – Kollektorstrom (dc) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 :A
- VCE = 5 V, - IC = 2 mA hFE
hFE
typ. 90 ... 270
110 ... 800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung hfe typ. 220 ... 600
Input impedance – Eingangs-Impedanz hie 1.6 ... 15 kS
Output admittance – Ausgangs-Leitwert hoe 18 ... 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ.1.5 ... 3 *10-4
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 19
123
465
T1 T2
General Purpose Transistors BC856S ... BC858S
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspag. 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA -VCEsat
-VCEsat
–
–90 mV
200 mV 250 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA - VBEsat
- VBEsat
–
–700 mV
900 mV –
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA - VBEon
- VBEon
600 mV
–650 mV
–750 mV
820 mV
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 30 V, Tj = 150/C- ICB0
- ICB0
–
––
–15 nA
5 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V - IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – – 6 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 1 kHz, )f = 200 Hz F – 2 dB 10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC846S ... BC848S
Pinning – Anschlußbelegung
