DATA SH EET
Product specification November 1992
DISCRETE SEMICONDUCTORS
BFT92
PNP 5 GHz wideband transistor
November 1992 2
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar system s,
oscilloscopes, spectrum analyzers,
etc. The transistor fea tu res low
intermodulation distortion and high
power gain; due to its ve ry hi gh
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements ar e BFR9 2 and
BFR92A.
PINNING
PIN DESCRIPTION
Code: W1p
1base
2emitter
3 collector
Fig.1 SOT23.
lfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Tsis the temperature at the sold ering point of the collector tab .
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base vo ltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
ICDC collector current 25 mA
Ptot total power dissipation up to Ts = 95 C; note 1 300 mW
fTtransition frequenc y IC = 14 mA; VCE = 10 V; f = 500 MHz 5 GHz
Cre feedback capacitance IC = 2mA; V
CE = 10 V; f = 1 MHz 0.7 pF
GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 C18 dB
Fnoise figure I
C = 5mA; V
CE = 10 V; f = 500 MHz;
Tamb =25 C2.5 dB
dim intermodulation dist ortion IC = 14 mA; VCE = 10 V; RL=75 ;
Vo=150 mV; T
amb = 25 C;
f(pq-r) = 493.25 MHz
60 dB
November 1992 3
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESIST ANCE
Note
1. Ts is the temperature at the sold ering point of the collector tab .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2V
ICDC collector current 25 mA
ICM peak collector current f 1 MHz 35 mA
Ptot total power dissipation up to Ts=95C; note 1 300 mW
Tstg storage temperature 65 150 C
Tjjunction temperature 175 C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts=95 C; note 1 260 K/W
November 1992 4
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
CHARACTERISTICS
Tj = 25 C unless oth erwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim =60 dB (DIN 45004B); IC=14 mA; VCE =10 V; RL=75 ;
Vp=V
oat dim =60 dB; fp= 495.25 MHz;
Vq=V
o6 dB; fq= 503.25 MHz;
Vr=V
o6dB; f
r= 505.25 MHz;
measured at f(pq-r) = 493.25 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cu t-off current IE = 0; VCB = 10 V; 50 nA
hFE DC current gain IC= 14 mA; VCE = 10 V 20 50
fTtransition frequency IC= 14 mA; VCE = 10 V;
f = 500 MHz 5GHz
Cccollector capacitance IE=i
e= 0; VCB =10 V; f = 1 MHz 0.75 pF
Ceemitter capacitance IC=i
c= 0; VEB =0.5 V; f = 1 MHz 0.8 pF
Cre feedback capacitan ce IC=2 mA; VCE =10 V; f = 1 MHz 0.7 pF
GUM maximum unilateral power gain
(note 1) IC= 14 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C18 dB
F noise figure IC= 5 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C2.5 dB
Vooutput voltage note 2 150 mV
GUM 10 S21 2
1S
11 2
–1S
22 2
–
---------------------------------------------------------- dB.log=
November 1992 5
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
Fig.2 Intermodulation distortion test circuit.
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
handbook, halfpage
MEA919
16 Ω
L2
680 pF
300 Ω
DUT
L1 680 pF 680 pF
24 V
3.9 kΩ
820
Ω
75 Ω
75 Ω
390 ΩL3
Fig.3 DC cu rrent gain as a function of collec tor
current.
VCE =10 V; Tj=25 C.
handbook, halfpage
MEA347
0
100
75
25
010 20 –I (mA)
C
FE
h
50
30
Fig.4 Collecto r c apacitance as a function of
collector-base voltage.
IE=i
e= 0; f = 1 MHz; Tj= 25 C.
handbook, halfpage
010
1
0
0.8
MEA920
0.6
0.4
0.2
Cc
(pF)
–VCB (V) 20
Fig.5 Transition frequency as a fun ction of
collector current.
VCE =10 V; f = 500 MHz; Tj=25 C.
handbook, halfpage
0102030
6
0
2
4
MEA344
–I (mA)
C
fT
(GHz)
November 1992 6
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
Fig.6 Minimum nois e figure as a function of
collector current.
VCE =10 V; Zs= opt.; f = 500 MHz; Tamb =25 C.
handbook, halfpage
MEA921
025
5
0
1
2
3
4
5 101520
F
(dB)
IC(mA)
Fig.7 Minimum nois e figure as a function of
frequency.
Ic=2mA; V
CE =10 V; Zs=opt.; T
amb =25 C.
handbook, halfpage
4
2
1
010
MEA465
110
3
F
(dB)
–1 f (GHz)
5
6
November 1992 7
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
November 1992 8
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed si nce this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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specification of the product as agreed between NXP
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product is deemed to offer functions and qualities beyond
those described in the Product data sh eet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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reserves the right to make changes to information
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Applications Applications that are described herein for
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Customers are responsible for the design and operation of
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associated with their ap plications and products.
November 1992 9
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
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or products, or the applic ation or use by customer’s third
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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Printed in The Netherlands R77/02/pp10 Date of release: November 1992
