INTEGRATED CIRCUITS DATA SHEET TDA8580 Multi-purpose power amplifier Preliminary specification File under Integrated Circuits, IC01 1996 Jan 04 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 FEATURES GENERAL DESCRIPTION General The TDA8580 is a stereo bridge-tied load (BTL) or a quad single-ended amplifier that operates over a wide supply voltage range from 5 to 32 V and consumes a very low quiescent current. This makes it suitable for many applications, such as battery fed applications, car radios, television and home-sound systems. * Operating voltage from 5 to 32 V * Very low quiescent current * Dynamic quiescent current control * Low distortion Because of an internal voltage buffer, this device can be used with, or without, a capacitor connected in series with the load (SE application). A combined BTL and 2 x SE application can also be configured. * Few external components, fixed again * High output power * Can be used as a stereo amplifier in bridge-tied load (BTL) or quad single-ended (SE) amplifiers * Single-ended mode without loudspeaker capacitor * Mute and standby mode with one or two pin operation (at low supply voltage only two pin operation) * Diagnostic information for Dynamic Distortion Detector (DDD), thermal protection and short-circuit * No switch on/off plops when switching between standby to mute and from mute to on * Low offset variation at outputs between mute and on * Fast mute on supply voltage drops. Protection * Reverse polarity safe (down to -18 V without high reverse current) * Able to withstand voltages up to 18 V at the outputs (positive supply line can be connected to ground) * Short-circuit proof to ground, positive supply voltage on all pins and across load * ESD protected on all pins * Thermal protection over 150 C * Load dump protection * Protected against open-circuit ground pins and output short-circuited to supply ground. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA8580 DBS17P 1996 Jan 04 DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) 2 VERSION SOT243-1 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP operating supply voltage 5.0 - 32 V Iq(tot) total quiescent current VP = 14.4 V - 15 30 mA Istb standby supply current VP = 14.4 V - 1 50 A Gv closed loop voltage gain single-ended 25 26 27 dB bridge-tied load 31 32 33 dB THD = 0.5%; VP = 14.4 V; RL = 4 - 5 - W THD = 0.5%; VP = 32 V; RL = 4 - 25 - W - - 20 mV Single-ended application Po output power Vos DC output offset voltage VP = 14.4 V; mute VP = 14.4 V; on - - 50 mV Vno noise output voltage single-ended; Rs = 0 - 70 100 V SVRR supply voltage ripple rejection on and mute 50 - - dB THD = 0.5%; VP = 14.4 V; RL = 4 - 17 - W THD = 0.5%; VP = 32 V; RL = 8 - 40 - W fi = 1 kHz; Po = 1 W; VP = 14.4 V; RL = 8 - 0.05 - % fi = 1 kHz; Po = 20 W; VP = 32 V; RL = 8 - 0.05 - % - - 20 mV Bridge-tied load application Po THD output power total harmonic distortion Vos DC output offset voltage VP = 14.4 V; mute VP = 14.4 V; on - - 60 mV Vno noise output voltage single-ended; Rs = 0 - 100 150 V SVRR supply voltage ripple rejection on and mute 55 - - dB 1996 Jan 04 3 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 BLOCK DIAGRAM VP1 VP2 3 15 handbook, full pagewidth IN1+ 7 60 k TDA8580 IN2+ 45 k - - V/I + + 8 60 k + + - V/I - 9 45 k 60 k 10 STANDBY 11 45 k - - V/I + + OA + + - - V/I OA 14 17 OUT3- OUT4+ 45 k 13 5 DIAGNOSTIC INTERFACE 2 6 16 MGE010 PGND1 Fig.1 Block diagram. 1996 Jan 04 BUFFER BUFFER 12 60 k MUTE OUT2- 45 k BUFFER IN4+ 4 OUT1+ 45 k 60 k IN5- OA 1 Vpx Vpx IN3+ OA 4 PGND2 DIAG Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 PINNING SYMBOL PIN DESCRIPTION OUT1+ 1 non-inverting output 1 PGND1 2 power ground 1 OUT1+ 1 VP1 3 supply voltage 1 PGND1 2 VP1 3 OUT2- 4 STANDBY 5 DIAG 6 IN1+ 7 IN2+ 8 BUFFER 9 IN3+ 10 IN4+ 11 IN5- 12 OUT2- 4 inverting output 2 STANDBY 5 standby/mute/on DIAG 6 diagnostic IN1+ 7 non-inverting input 1 IN2+ 8 inverting input 2 BUFFER 9 buffer output (single-ended output buffer) handbook, halfpage IN3+ 10 inverting input 3 IN4+ 11 non-inverting input 4 IN5- 12 inverting input 5; signal ground MUTE 13 mute/on OUT3- 14 inverting output 3 VP2 15 supply voltage 2 MUTE 13 PGND2 16 power ground 2 OUT3- 14 OUT4+ 17 non-inverting output 4 VP2 15 PGND2 16 OUT4+ 17 TDA8580 MGE009 Fig.2 Pin configuration. 1996 Jan 04 5 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 Protections are included to avoid the IC being damaged at; FUNCTIONAL DESCRIPTION 1. Over temperature T > 150 C. The TDA8580 is a multi-purpose power amplifier with four independent amplifiers which can be connected in the following configurations with high output power and low distortion (at minimum quiescent current); 2. Short-circuit of the output pin(s) to ground or supply rail. When shorted, the power dissipation is limited. 3. A maximum current limiter which limits the maximum output current to 4 A. During this limiting action the load resistance is measured and when the load is less than 1 , the amplifier is switched off (every 20 ms the IC tries to restart). The dissipation will be minimized because of a low duty-cycle. The chip temperature is protected by the temperature protection. 1. Dual bridge-tied load (BTL) amplifiers. 2. Quad single-ended amplifiers. 3. Dual single-ended amplifiers and one bridge-tied load amplifier. The amplifier can be switched on (play or mute) and off (standby) by a dual mute standby pin (for interfacing directly with a microcontroller). One pin operation is also possible by applying a voltage greater than 7 V to the standby/mute/on pin. 4. ESD protection (human body 3000 V and machine model 300 V). Special attention is given to the dynamic behaviour as follows; 5. Energy handling. A DC voltage of 18 V can be connected to the output of any amplifier while the supply pins are shorted to ground. No high DC current will flow from the supply pins of the amplifier. 1. Noise suppression during engine start. 6. Reverse battery to avoid a high current flowing. 2. No plops when switching from standby to on. Diagnostics are available for the following conditions (see Figs 5 to 8). 3. Slow offset change between mute and on (controlled by mute/standby circuit). 1. Amplifier in MUTE. 4. Low noise levels, which are independant of the supply voltage. 2. Chip temperature greater than 135 C. 3. Distortion over 10% due to clipping. 4. Short-circuit protection active. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. MAX. UNIT operating 5 32 V non-operating -18 - V load dump protected; see Fig.3 - 50 V VDIAG voltage on diagnostic pin - 18 V IOSM peak output current non-repetitive - 6 A IORM peak output current repetitive - 4.5 A Vrev reverse polarity voltage - 18 V Vsc AC and DC short-circuit voltage of output pins across loads and to ground/supply - 32 V Ptot total power dissipation - 75 W Tj junction temperature - 150 C Tstg storage temperature -55 +150 C Tamb operating ambient temperature -40 - C 1996 Jan 04 6 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case 1.5 K/W QUALITY SPECIFICATION In accordance with "SNW-FQ-611 part E", if this type is used as an audio amplifier. The numbers of the quality specification can be found in the "Quality Reference Handbook". The handbook can be ordered using the code 9398 510 63011. CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; fi = 1 kHz; RL = ; measured in test circuit of Fig.9; unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP operating supply voltage 5.0 14.4 32 V Iq(tot) total quiescent current - 15 30 mA Istb standby current - 1 50 A VO DC output voltage VP = 14.4 V - 7.0 - V Vsw low supply voltage switch off see Fig.4 2.7 3.1 3.5 V Vpm low supply voltage mute 6.0 7.0 8.0 V Vos single-ended offset voltage VP = 14.4 V; on - 0 50 mV Vos bridge-tied load offset voltage VP = 14.4 V; on - 0 60 mV Vo single-ended and bridge-tied load output voltage VP = 14.4 V; mute - - 20 mV VI DC input voltage VP = 14.4 V - 4.0 - V 0 - 0.8 V STANDBY, MUTE AND ON (see Table 1) V5 standby condition V5 standby hysteresis note 1 - 0.2 - V V5 mute condition V13 < 1 V 2.0 - 5.5 V V5 on condition V13 < 1 V; VP > 11 V 8.0 - 18 V V13 mute condition V5 = 5 V 0 - 1.0 V V13 on condition V5 = 5 V 3.5 - 5.5 V MUTE AND ON Diagnostic; output buffer (open-collector); see Figs 5, 6, 7 and 8 VOL low level output voltage Isink = 1 mA - 0.2 0.8 V ILI leakage current VDIAG = 14.4 V - - 1 A CD clip detector VDIAG < 0.8 V 5 10 15 % Tjunc thermal protection VDIAG < 0.8 V 135 - - C 1996 Jan 04 7 Philips Semiconductors Preliminary specification Multi-purpose power amplifier SYMBOL PARAMETER TDA8580 CONDITIONS MIN. TYP. MAX. UNIT Stereo BTL application (see Fig.9) THD Po total harmonic distortion output power Po = 1 W; fi = 1 kHz; RL = 4 - 0.05 0.1 % Po = 1 W; fi = 10 kHz; RL = 4 - 0.1 - % THD = 0.5%; VP = 14.4 V; RL = 4 15 17 - W THD = 0.5%; VP = 32 V; RL = 8 37 40 - W THD = 10%; VP = 14.4 V; RL = 4 18 21 - W THD = 10%; VP = 32 V; RL = 8 - 50 - W Gv voltage gain 31 32 33 dB cs channel separation 40 55 - dB Gv channel unbalance - - 1 dB Vno noise voltage Rs = 1 k; VP = 14.4 V; note 2 - 100 150 V Vnom noise voltage mute note 2 - - 20 V Vo output voltage mute Vi = 1 V (RMS) - 3 500 V SVRR supply voltage ripple rejection fi = 1 kHz; Vripple = 2 Vtt; on/mute condition; Rs = 0 55 - - dB Zi input impedance 23 30 37 k CMRR common mode rejection ratio Vi = 1 V (RMS) - 68 - dB Po = 1 W; fi = 1 kHz; RL = 4 - 0.05 0.1 % 0.1 - % Quad SE application (see Fig.10) THD total harmonic distortion Po = 1 W; fi = 10 kHz; RL = 4 - Po output power THD = 0.5%; VP = 14.4 V; RL = 4 4 5 - W THD = 0.5%; VP = 32 V; RL = 8 21 25 - W THD = 10%; VP = 14.4 V; RL = 4 - 6 - W THD = 10%; VP = 32 V; RL = 8 25 30 - W Gv voltage gain 25 26 27 dB cs channel separation 40 46 - dB Gv channel unbalance - - 1 dB Vno noise voltage Rs = 1 k; VP = 14.4 V; note 2 - 80 120 V Vnom noise voltage mute note 2 - - 20 V Vo output voltage mute Vin = 1 V (RMS) - 3 500 V SVRR supply voltage ripple rejection fi = 1 kHz; Vripple = 2 Vtt, on/mute condition; Rs = 0 55 - - dB Zi input impedance 46 60 74 k CMRR common mode rejection ratio - 68 - dB 1996 Jan 04 Vi = 1 V (RMS) 8 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 Notes to the characteristics 1. Hysteresis between rise and fall voltage. 2. The noise output is measured in a bandwidth of 20 Hz to 20 kHz. Table 1 Standby/Mute and On PIN 5 PIN 13 FUNCTION <0.8 don't care standby (off) V5 = 2 to 5.3 V V13 <1 V mute (DC settled) V5 = 2 to 5 V 3.5 << 5.3 V on (AC operating) >8.0 don't care on (AC operating) MGE018 handbook, halfpage handbook, halfpage MGE017 VP 50 V VP Vpm Vsw 14.4 V >2.5 >50 tr tf t (ms) on Fig.3 Load dump voltage waveform. 1996 Jan 04 mute off Fig.4 Low voltage supply behaviour. 9 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 play normal handbook, halfpage handbook, halfpage amplifier in mute diagnostic short-circuit overload diagnostic mute mute amplifier output amplifier output MGE020 MGE019 Fig.5 Diagnostic waveform; normal play. handbook, halfpage normal play DDD Fig.6 Diagnostic waveform; short-circuit overload. handbook, halfpage normal diagnostic diagnostic amplifier output amplifier output MGE022 MGE021 Fig.8 Fig.7 Diagnostic waveform; DDD play. 1996 Jan 04 short-circuit to VP PGND 10 Diagnostic waveform; short-circuit to GND and VP. Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 APPLICATION INFORMATION handbook, full pagewidth 1000 F 16/40 V 220 nF VP1 VP2 3 15 IN1+ 7 60 k VinL TDA8580 45 k - - V/I + + IN2+ 8 60 k - V/I - OA 4 OUT2- 45 k IN3+ 10 60 k IN4+ 11 BUFFER 45 k - - V/I + + - V/I 14 OUT3- + - + + - OA OA 17 45 k DIAGNOSTIC INTERFACE 2 PGND1 +5 V Fig.9 Stereo bridge-tied load application. 11 6 16 PGND2 4 or 8 OUT4+ MUTE 13 5 4 or 8 9 BUFFER IN5- 12 STANDBY - 45 k 60 k 1996 Jan 04 + 45 k BUFFER VinR 1 OUT1+ Vpx 60 k 100 F 10 V OA + + Vpx 220 nF VP 100 nF MGE011 DIAG 10 k Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 VP handbook, full pagewidth 1000 F 16/40 V VP1 VP2 3 15 100 nF 220 nF IN1+ 7 VinR 60 k TDA8580 FRONT 45 k - - V/I + + 220 nF IN2+ 8 60 k VinL + - V/I - 4 OUT2- OA - 45 k 9 45 k IN5- 12 60 k IN3+ 10 BUFFER BUFFER + - - V/I + + 14 OUT3- OA - 220 nF IN4+ 11 + + - - V/I 4 or 8 - 45 k VinR 60 k 17 OA OUT4+ + 4 or 8 45 k +5 V VinL MUTE 13 STANDBY 5 DIAGNOSTIC INTERFACE 2 PGND1 12 6 16 PGND2 Fig.10 Quad single-ended application. 1996 Jan 04 4 or 8 + 45 k BUFFER REAR 4 or 8 - Vpx 60 k 220 nF OUT1+ + + Vpx 100 F 10 V 1 OA MGE013 DIAG 10 k Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 handbook, full pagewidth 220 nF VP1 VP2 3 15 100 nF IN1+ 7 45 k - 60 k VinR - V/I + TDA8580 + IN2+ 8 - V/I - OUT1+ + 4 OUT2- OA 45 k 45 k 60 k 9 45 k BUFFER BUFFER + 60 k - V/I + IN3+ 10 + 14 OUT3- OA - + + 60 k - IN4+ 11 - V/I 4 or 8 - 45 k - IN5- 12 BUFFER VinR 220 nF 4 or 8 - Vpx Vpx 100 F 10 V 1 OA + + 60 k 220 nF VP 1000 F 16/40 V 17 OA OUT4+ 4 or 8 + 45 k +5 V VinL MUTE 13 STANDBY 5 DIAGNOSTIC INTERFACE 2 PGND1 6 16 PGND2 MGE012 Fig.11 Dual single-ended and one bridge-tied load application. 1996 Jan 04 13 DIAG 10 k Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 INTERNAL PIN CONFIGURATION PIN NAME 7, 8, 10, 11 and 12 inputs EQUIVALENT CIRCUIT VP handbook, halfpage IN MGE014 1, 4, 14 and 17 outputs VP handbook, halfpage OUT 0.5 VP 5 and 13 mode select handbook, halfpage MGE015 VP MGE016 1996 Jan 04 14 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 17 e1 Z bp e e2 m w M 0 5 v M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-03-11 SOT243-1 1996 Jan 04 EUROPEAN PROJECTION 15 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jan 04 16 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 17 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 18 Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 19 Philips Semiconductors - a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. 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(0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 513061/1100/01/pp20 Document order number: Date of release: 1996 Jan 04 9397 750 00549