DATA SH EET
Preliminary specification
File under Integrated Circuits, IC01 1996 Jan 04
INTEGRATED CIRCUITS
TDA8580
Multi-purpose power amplifier
1996 Jan 04 2
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
FEATURES
General
•Operating voltage from 5 to 32 V
•Very low quiescent current
•Dynamic quiescent current control
•Low distortion
•Few external components, fixed again
•High output power
•Can be used as a stereo amplifier in bridge-tied load
(BTL) or quad single-ended (SE) amplifiers
•Single-ended mode without loudspeaker capacitor
•Mute and standby mode with one or two pin operation
(at low supply voltage only two pin operation)
•Diagnostic information for Dynamic Distortion Detector
(DDD), thermal protection and short-circuit
•No switch on/off plops when switching between standby
to mute and from mute to on
•Low offset variation at outputs between mute and on
•Fast mute on supply voltage drops.
Protection
•Reverse polarity safe (down to −18 V without high
reverse current)
•Able to withstand voltages up to 18 V at the outputs
(positive supply line can be connected to ground)
•Short-circuit proof to ground, positive supply voltage on
all pins and across load
•ESD protected on all pins
•Thermal protection over 150 °C
•Load dump protection
•Protected against open-circuit ground pins and output
short-circuited to supply ground.
GENERAL DESCRIPTION
The TDA8580 is a stereo bridge-tied load (BTL) or a quad
single-ended amplifier that operates over a wide supply
voltage range from 5 to 32 V and consumes a very low
quiescent current. This makes it suitable for many
applications, such as battery fed applications, car radios,
television and home-sound systems.
Because of an internal voltage buffer, this device can be
used with, or without, a capacitor connected in series with
the load (SE application). A combined BTL and 2 ×SE
application can also be configured.
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA8580 DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
1996 Jan 04 3
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VPoperating supply voltage 5.0 −32 V
Iq(tot) total quiescent current VP= 14.4 V −15 30 mA
Istb standby supply current VP= 14.4 V −150µA
G
vclosed loop voltage gain single-ended 25 26 27 dB
bridge-tied load 31 32 33 dB
Single-ended application
Pooutput power THD = 0.5%; VP= 14.4 V;
RL=4Ω−5−W
THD = 0.5%; VP=32V;
R
L=4Ω−25 −W
Vos DC output offset voltage VP= 14.4 V; mute −−20 mV
VP= 14.4 V; on −−50 mV
Vno noise output voltage single-ended; Rs=0Ω− 70 100 µV
SVRR supply voltage ripple rejection on and mute 50 −−dB
Bridge-tied load application
Pooutput power THD = 0.5%; VP= 14.4 V;
RL=4Ω−17 −W
THD = 0.5%; VP=32V;
R
L=8Ω−40 −W
THD total harmonic distortion fi= 1 kHz; Po=1W;
V
P= 14.4 V; RL=8Ω−0.05 −%
fi= 1 kHz; Po=20W;
V
P= 32 V; RL=8Ω−0.05 −%
Vos DC output offset voltage VP= 14.4 V; mute −−20 mV
VP= 14.4 V; on −−60 mV
Vno noise output voltage single-ended; Rs=0Ω− 100 150 µV
SVRR supply voltage ripple rejection on and mute 55 −−dB
1996 Jan 04 4
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGE010
60 kΩ
45 kΩ
45
kΩ
45
kΩ
60
kΩ
60
kΩ
BUFFER
INTERFACE DIAGNOSTIC
5
13 6
MUTE
STANDBY DIAG
BUFFER
Vpx Vpx
OA
45 kΩ
−
−
+
+
OA
V/I
−
−
+
+
V/I
45 kΩ
60
kΩ
60
kΩ
OA
45 kΩ
−
−
+
+
OA
V/I
−
−
+
+
V/I
7
IN1+
8
IN2+
10
12
11
IN3+
IN5−
IN4+
1
4
9
14
17 OUT4+
OUT3−
BUFFER
OUT2−
OUT1+
315
VP1 VP2
216
PGND1 PGND2
TDA8580
1996 Jan 04 5
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
PINNING
SYMBOL PIN DESCRIPTION
OUT1+ 1 non-inverting output 1
PGND1 2 power ground 1
VP1 3 supply voltage 1
OUT2−4 inverting output 2
STANDBY 5 standby/mute/on
DIAG 6 diagnostic
IN1+ 7 non-inverting input 1
IN2+ 8 inverting input 2
BUFFER 9 buffer output
(single-ended output buffer)
IN3+ 10 inverting input 3
IN4+ 11 non-inverting input 4
IN5−12 inverting input 5; signal ground
MUTE 13 mute/on
OUT3−14 inverting output 3
VP2 15 supply voltage 2
PGND2 16 power ground 2
OUT4+ 17 non-inverting output 4
Fig.2 Pin configuration.
handbook, halfpage
TDA8580
MGE009
OUT1+
PGND1
VP1
OUT2−
STANDBY
DIAG
IN1+
IN2+
BUFFER
IN3+
IN4+
IN5−
MUTE
OUT3−
VP2
PGND2
OUT4+
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
1996 Jan 04 6
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
FUNCTIONAL DESCRIPTION
The TDA8580 is a multi-purpose power amplifier with four
independent amplifiers which can be connected in the
following configurations with high output power and low
distortion (at minimum quiescent current);
1. Dual bridge-tied load (BTL) amplifiers.
2. Quad single-ended amplifiers.
3. Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched on (play or mute) and off
(standby) by a dual mute standby pin (for interfacing
directly with a microcontroller). One pin operation is also
possible by applying a voltage greater than 7 V to the
standby/mute/on pin.
Special attention is given to the dynamic behaviour as
follows;
1. Noise suppression during engine start.
2. No plops when switching from standby to on.
3. Slow offset change between mute and on (controlled
by mute/standby circuit).
4. Low noise levels, which are independant of the supply
voltage.
Protections are included to avoid the IC being damaged at;
1. Over temperature T > 150 °C.
2. Short-circuit of the output pin(s) to ground or supply
rail. When shorted, the power dissipation is limited.
3. A maximum current limiter which limits the maximum
output current to 4 A. During this limiting action the
load resistance is measured and when the load is less
than 1 Ω, the amplifier is switched off (every 20 ms the
IC tries to restart). The dissipation will be minimized
because of a low duty-cycle. The chip temperature is
protected by the temperature protection.
4. ESD protection (human body 3000 V and machine
model 300 V).
5. Energy handling. A DC voltage of 18 V can be
connected to the output of any amplifier while the
supply pins are shorted to ground. No high DC current
will flow from the supply pins of the amplifier.
6. Reverse battery to avoid a high current flowing.
Diagnostics are available for the following conditions
(see Figs 5 to 8).
1. Amplifier in MUTE.
2. Chip temperature greater than 135 °C.
3. Distortion over 10% due to clipping.
4. Short-circuit protection active.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating 5 32 V
non-operating −18 −V
load dump protected;
see Fig.3 −50 V
VDIAG voltage on diagnostic pin −18 V
IOSM peak output current non-repetitive −6A
I
ORM peak output current repetitive −4.5 A
Vrev reverse polarity voltage −18 V
Vsc AC and DC short-circuit voltage of output
pins across loads and to ground/supply −32 V
Ptot total power dissipation −75 W
Tjjunction temperature −150 °C
Tstg storage temperature −55 +150 °C
Tamb operating ambient temperature −40 −°C
1996 Jan 04 7
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611 part E”
, if this type is used as an audio amplifier. The numbers of the quality
specification can be found in the
“Quality Reference Handbook”
. The handbook can be ordered using the code
9398 510 63011.
CHARACTERISTICS
VP= 14.4 V; Tamb =25°C; fi= 1 kHz; RL=∞; measured in test circuit of Fig.9; unless otherwise specified).
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 40 K/W
Rth j-c thermal resistance from junction to case 1.5 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPoperating supply voltage 5.0 14.4 32 V
Iq(tot) total quiescent current −15 30 mA
Istb standby current −150µA
V
ODC output voltage VP= 14.4 V −7.0 −V
Vsw low supply voltage switch off see Fig.4 2.7 3.1 3.5 V
Vpm low supply voltage mute 6.0 7.0 8.0 V
Vos single-ended offset voltage VP= 14.4 V; on −050mV
V
os bridge-tied load offset voltage VP= 14.4 V; on −060mV
V
osingle-ended and bridge-tied
load output voltage VP= 14.4 V; mute −−20 mV
VIDC input voltage VP= 14.4 V −4.0 −V
STANDBY,MUTE AND ON (see Table 1)
V5standby condition 0 −0.8 V
V5standby hysteresis note 1 −0.2 −V
V5mute condition V13 < 1 V 2.0 −5.5 V
V5on condition V13 <1V; V
P>11V 8.0 −18 V
MUTE AND ON
V13 mute condition V5=5V 0 −1.0 V
V13 on condition V5=5V 3.5 −5.5 V
Diagnostic; output buffer (open-collector); see Figs 5, 6, 7 and 8
VOL low level output voltage Isink =1mA −0.2 0.8 V
ILI leakage current VDIAG = 14.4 V −−1µA
CD clip detector VDIAG < 0.8 V 5 10 15 %
Tjunc thermal protection VDIAG < 0.8 V 135 −−°C
1996 Jan 04 8
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
Stereo BTL application (see Fig.9)
THD total harmonic distortion Po=1W; f
i= 1 kHz; RL=4Ω− 0.05 0.1 %
Po=1W; f
i= 10 kHz; RL=4Ω− 0.1 −%
Pooutput power THD = 0.5%; VP= 14.4 V;
RL=4Ω15 17 −W
THD = 0.5%; VP=32V;
R
L=8Ω37 40 −W
THD = 10%; VP= 14.4 V;
RL=4Ω18 21 −W
THD = 10%; VP=32V;
R
L=8Ω−50 −W
Gvvoltage gain 31 32 33 dB
αcs channel separation 40 55 −dB
∆Gvchannel unbalance −−1dB
V
no noise voltage Rs=1kΩ; VP= 14.4 V; note 2 −100 150 µV
Vnom noise voltage mute note 2 −−20 µV
Vooutput voltage mute Vi= 1 V (RMS) −3 500 µV
SVRR supply voltage ripple rejection fi= 1 kHz; Vripple =2V
tt;
on/mute condition; Rs=0Ω55 −−dB
Ziinput impedance 23 30 37 kΩ
CMRR common mode rejection ratio Vi= 1 V (RMS) −68 −dB
Quad SE application (see Fig.10)
THD total harmonic distortion Po=1W; f
i= 1 kHz; RL=4Ω− 0.05 0.1 %
Po=1W; f
i= 10 kHz; RL=4Ω− 0.1 −%
Pooutput power THD = 0.5%; VP= 14.4 V;
RL=4Ω45−W
THD = 0.5%; VP=32V;
R
L=8Ω21 25 −W
THD = 10%; VP= 14.4 V;
RL=4Ω−6−W
THD = 10%; VP=32V;
R
L=8Ω25 30 −W
Gvvoltage gain 25 26 27 dB
αcs channel separation 40 46 −dB
∆Gvchannel unbalance −−1dB
V
no noise voltage Rs=1kΩ; VP= 14.4 V; note 2 −80 120 µV
Vnom noise voltage mute note 2 −−20 µV
Vooutput voltage mute Vin = 1 V (RMS) −3 500 µV
SVRR supply voltage ripple rejection fi= 1 kHz; Vripple =2V
tt,
on/mute condition; Rs=0Ω55 −−dB
Ziinput impedance 46 60 74 kΩ
CMRR common mode rejection ratio Vi= 1 V (RMS) −68 −dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1996 Jan 04 9
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
Notes to the characteristics
1. Hysteresis between rise and fall voltage.
2. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1 Standby/Mute and On
PIN 5 PIN 13 FUNCTION
<0.8 don’t care standby (off)
V5= 2 to 5.3 V V13 <1 V mute (DC settled)
V5= 2 to 5 V 3.5 << 5.3 V on (AC operating)
>8.0 don’t care on (AC operating)
Fig.3 Load dump voltage waveform.
handbook, halfpage
MGE018
tr
VP
tf
>50
50 V
14.4 V
t (ms)
>2.5
Fig.4 Low voltage supply behaviour.
handbook, halfpage
MGE017
VP
Vpm
Vsw
on mute off
1996 Jan 04 10
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
Fig.5 Diagnostic waveform; normal play.
handbook, halfpage
diagnostic
mute
amplifier
output
amplifier
in mute
play
normal
mute
MGE019
Fig.6 Diagnostic waveform; short-circuit overload.
handbook, halfpage
MGE020
diagnostic
amplifier
output
short-circuit
overload
Fig.7 Diagnostic waveform; DDD play.
handbook, halfpage
MGE021
diagnostic
amplifier
output
normal play
DDD normal
Fig.8 Diagnostic waveform; short-circuit to GND
and VP.
handbook, halfpage
diagnostic
amplifier
output
short-circuit to
PGND VP
MGE022
1996 Jan 04 11
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
APPLICATION INFORMATION
Fig.9 Stereo bridge-tied load application.
handbook, full pagewidth
MGE011
60 kΩ
45 kΩ
45
kΩ
45
kΩ
60
kΩ
60
kΩ
BUFFER
INTERFACE DIAGNOSTIC
5
13 6
MUTE
STANDBY DIAG
BUFFER
Vpx Vpx
OA
45 kΩ
−
−
+
+−
+
−
+
OA
V/I
−
−
+
+
V/I
45 kΩ
60
kΩ
60
kΩ
OA
45 kΩ
−
−
+
+
OA
V/I
−
−
+
+
V/I
7
IN1+
8
IN2+
10
12
11
IN3+
IN5−
IN4+
1
4
9
14
17 OUT4+
OUT3−
BUFFER
OUT2−
OUT1+
315
216
PGND1 PGND2
TDA8580
1000 µF
16/40 V 100 nF
10
kΩ
100 µF
10 V
220 nF
+5 V
4 or 8 Ω
4 or 8 Ω
VinL
220 nF
VinR
VP
VP1 VP2
1996 Jan 04 12
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
Fig.10 Quad single-ended application.
handbook, full pagewidth
MGE013
60 kΩ
45 kΩ
45
kΩ
45
kΩ
60
kΩ
60
kΩ
BUFFER
INTERFACE DIAGNOSTIC
5
13 6
MUTE
STANDBY DIAG
BUFFER
Vpx Vpx
OA
45 kΩ
−
−
+
+−
+
−
+
−
+
−
+
OA
V/I
−
−
+
+
V/I
45 kΩ
60
kΩ
60
kΩ
OA
45 kΩ
−
−
+
+
OA
V/I
−
−
+
+
V/I
7
IN1+
8
IN2+
10
12
11
IN3+
IN5−
IN4+
1
4
9
14
17 OUT4+
OUT3−
BUFFER
OUT2−
OUT1+
315
216
PGND1 PGND2
TDA8580
1000 µF
16/40 V 100 nF
10
kΩ
100 µF
10 V
220 nF
+5 V
4 or 8 Ω
4 or 8 Ω
4 or 8 Ω
VinR
220 nF
VinL
220 nF
VinL
FRONT
220 nF
VinR
4 or 8 Ω
REAR
VP
VP1 VP2
1996 Jan 04 13
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
Fig.11 Dual single-ended and one bridge-tied load application.
handbook, full pagewidth
MGE012
60 kΩ
45 kΩ
45
kΩ
45
kΩ
60
kΩ
60
kΩ
BUFFER
INTERFACE DIAGNOSTIC
5
13 6
MUTE
STANDBY DIAG
BUFFER
Vpx Vpx
OA
45 kΩ
−
−
+
+−
+
−
+
OA
V/I
−
−
+
+
V/I
45 kΩ
60
kΩ
60
kΩ
OA
45 kΩ
−
−
+−
+
+
OA
V/I
−
−
+
+
V/I
7
IN1+
8
IN2+
10
12
11
IN3+
IN5−
IN4+
1
4
9
14
17 OUT4+
OUT3−
BUFFER
OUT2−
OUT1+
315
216
PGND1 PGND2
TDA8580
1000 µF
16/40 V 100 nF
10
kΩ
100 µF
10 V
220 nF
+5 V
4 or 8 Ω
4 or 8 Ω
4 or 8 Ω
VinR
220 nF
VinL
220 nF
VinR
VP
VP1 VP2
1996 Jan 04 14
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
INTERNAL PIN CONFIGURATION
PIN NAME EQUIVALENT CIRCUIT
7, 8, 10,
11 and 12 inputs
1, 4,
14 and 17 outputs
5 and 13 mode select
handbook, halfpage
MGE014
VP
IN
handbook, halfpage
MGE015
VP
OUT
0.5 VP
handbook, halfpage
MGE016
VP
1996 Jan 04 15
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0 5 10 mm
scale
D
L
E
A
c
A2
L3
Q
wM
bp
1
d
D
Ze
e
xh
117
j
E
h
non-concave
92-11-17
95-03-11
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
view B: mounting base side
m2
evM
B
UNIT A e1
A2bpcD
(1) E(1) Z(1)
deD
hLL
3m
mm 17.0
15.5 4.6
4.2 0.75
0.60 0.48
0.38 24.0
23.6 20.0
19.6 10 2.54
v
0.8
12.2
11.8 1.27
e2
5.08 2.4
1.6
Eh
62.00
1.45
2.1
1.8
3.4
3.1 4.3
12.4
11.0
Qj
0.4
w
0.03
x
1996 Jan 04 16
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
(order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1996 Jan 04 17
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
NOTES
1996 Jan 04 18
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
NOTES
1996 Jan 04 19
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580
NOTES
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,
Tel. 9-5(800)234-7381, Fax. (708)296-8556
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040)2783749, Fax. (040)2788399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022)74 8000, Fax. (022)74 8341
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. (021)587 4641-49,
Fax. (021)577035/5874546
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,
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Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474
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Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
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Bangkok 10260, THAILAND,
Tel. (66) 2 745-4090, Fax. (66) 2 398-0793
Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0212)279 27 70, Fax. (0212)282 67 07
Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel.380-44-4760297, Fax. 380-44-4766991
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. (0181)730-5000, Fax. (0181)754-8421
United States:811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-2724825
SCDS47 © Philips Electronics N.V. 1996
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513061/1100/01/pp20 Date of release: 1996 Jan 04
Document order number: 9397 750 00549
