2001.Jul.21
800mA LDO REGULATOR
R1170X series
Rev. 1.10 - 1 -
■
■■
■ OUTLINE
The R1170 Series are positive voltage regulator ICs by CMOS process. The R1170 Series have features of
high ripple rejection, low dropout voltage, high output voltage accuracy, low consumption current. Each of these ICs
consists of a voltage reference unit, an error amplifier, resistor net for setting output voltage, a current limit circuit at
short mode, a chip enable circuit, and thermal-shunt circuit. Output Voltage of R1170 is fixed in the IC.
Low consumption current by the merit of CMOS process and built-in transistors with low ON-resistance make
low dropout voltage and chip enable function prolong the battery life. These regulators are remarkable improvement
on the current regulators in terms of ripple rejection, input transient response, and load transient response.
Maximum Output Current is large for its compact size.
Thus, the R1170 Series are suitable for various power sources for portable appliances.
Since the packages for these ICs are the SOT-89-5 package or HSON6, high density mounting of the ICs on
boards is possible.
■
■■
■ FEATURES
●Ultra-Low Supply Current• • • • • • • • TYP. 80µA
●Low Standby Current • • • • • • • • • • • TYP. 0.1µA
●Output Current • • • • • • • • • • • • • • • MIN. 800mA(VIN=VOUT+1.0V)
●Output Voltage • • • • • • • • • • • • Stepwise setting with a step of 0.1V in the range of 1.5V to 4.0V
●High Output Voltage Accuracy • • • • ±2.0%
●Low Dropout Voltage• • • • • • • • • • • • TYP. 0.12V(VOUT=3.0V, IOUT=300mA)
●Line Regulation• • • • • • • • • • • • TYP. 0.05%/V
●Small Package • • • • • • • • • • • • • • • • SOT-89-5, HSON6
●Built-in Current Limit Circuit
●Built-in Thermal Shunt Circuit
●Low Temperature-drift Coefficient of Output Voltage • • • • • • • • • TYP.±100ppm/°C
■
■■
■ APPLICATIONS
●Local Power source for Notebook PC.
●Local Power source for portable appliances, cameras, and videos.
●Local Power source for equipment of battery-use.
●Local Power source for home appliances.
Rev. 1.10 - 2 -
■
■■
■ BLOCK DIAGRAMS
R1170H Series R1170D Series
Vref
1
4 5
2
Current Limit
-
+
VDD
CE
VOUT
GND
VDD
VDD
Vref
3
61
4
Current Limit
-
+
CE
VOUT
GND
5 2 VOUT
■
■■
■ SELECTION GUIDE
The output voltage, the chip-enable polarity, the taping type can be selected at the user’s request. The selection
can be made with the part number as follows;
R1170X XXXX-XX ← Part Number
↑ ↑ ↑ ↑
a b c d
Code Contents
a Package Type; H: SOT89-5, D: HSON-6P
b Designation of Output Voltage(VOUT)
Stepwise setting with 0.1V increment in the range from 1.5V to 4.0V
c Designation of option;
A: Built-in Chip Enable Circuit, Active at “L”
B: Built-in Chip Enable Circuit, Active at “H”
d Designation of Taping Type;
T1 or T2 (SOT89-5), TR(HSON-6) (Refer to Taping Specifications)
■
■■
■ PIN CONFIGURATION
● SOT-89-5
54
123
Mark Side
Rev. 1.10 -3-
● HSON-6P
6 5 4
1 2 3
■
■■
■ PIN DESCRIPTION
SOT89-5
Pin No. Symbol Description
1 CE or CE Chip Enable Pin Voltage Regulator Output Pin
2 GND Ground Pin
3 NC No Connection
4V
DD Input Pin
5V
OUT Voltage Regulator Output Pin
HSON-6P
Pin No. Symbol Description
1V
OUT Voltage Regulator Output Pin
2V
OUT Voltage Regulator Output Pin
3 CE or CE Chip Enable Pin Voltage Regulator Output Pin
4 GND Ground Pin
5V
DD Input Pin
6V
DD Input Pin
■
■■
■ ABSOLUTE MAXIMUM RATINGS
Item Symbol Rating Unit
Input Voltage VIN 7.0 V
Input Voltage(CE or CE Input Pin)*Note VCE -0.3 ~ VIN+0.3 V
Output Voltage VOUT -0.3 ~ VIN+0.3 V
Output Current IOUT 1.2 A
Power Dissipation PDInternally limited
Operating Temperature Topt -40 ~ 85 °C
Storage Temperature Tstg -55 ~ 125 °C
Rev. 1.10 - 4 -
■
■■
■ ELECTRICAL CHARACTERISTICS
●R1170XxxxA
(Topt=25
°C)
Item Symbol Conditions MIN. TYP. MAX. Unit
Input Voltage VIN 6.0 V
Supply Current1 ISS1 VIN-VOUT=1.0V
VCE=GND
80 160 µA
Standby Current Istb VIN=VCE=6.0V 0.1 1.0 µA
Output voltage VOUT VIN-VOUT=1.0V
IOUT=100mA
x0.98 x1.02 V
Output Current IOUT1 VIN-VOUT=1.0V 800 mA
Load regulation ∆VOUT/
∆IOUT
VIN-VOUT=1.0V
1mA≤IOUT≤300mA
30 100 mV
Dropout Voltage VDIF IOUT=300mA Refer to Dropout Voltage Table
Line regulation ∆VOUT/
∆VIN
IOUT=100mA
VOUT+0.5V≤VIN≤8.0V
0.05 0.30 %/V
Ripple Rejection RR f=1kHz,Ripple 0.5Vp-p
VIN-VOUT=1.0V
50 dB
Output Voltage
Temperature Coefficient
∆VOUT/
∆T
IOUT=10mA
-40°C ≤ Topt ≤ 85°C
±100 ppm
/°C
Short Current Limit ILIM VOUT=0V 40 mA
Pull-up resistance for CE pin RPU 1.25 2.50 5.00 MΩ
CE Input Voltage “H” VCEH 1.50 VIN V
CE Input Voltage “L” VCEL 0.00 0.25 V
Thermal Shutdown Detector
Threshold Temperature
TTSD Junction Temperature 150 °C
Thermal Shutdown Released
Temperature
TTSR Junction Temperature 120 °C
Rev. 1.10 -5-
●R1170xxxxB
(Topt=25°C)
Item Symbol Conditions MIN. TYP. MAX. Unit
Input voltage VIN 6.0 V
Supply Current1 ISS1 VIN-VOUT=1.0V VCE=VIN 80 160 µA
Standby Current Istb VIN=6.0V, VCE=GND 0.1 1.0 µA
Reference Voltage for
Adjustable Voltage Regulator
VOUT VIN-VOUT=1.0V
IOUT=100mA
x0.98 x1.02 V
Output Current IOUT1 VIN-VOUT=1.0V 800 mA
Load regulation ∆VOUT/
∆IOUT
VIN-VOUT=1.0V
1mA≤IOUT≤300mA
30 100 mV
Dropout Voltage VDIF IOUT=300mA Refer to Dropout Voltage Table
Line regulation ∆VOUT/
∆VIN
IOUT=100mA
VOUT+0.5V≤VIN≤8.0V
0.05 0.30 %/V
Ripple Rejection RR f=1kHz,Ripple 0.5Vp-p 50 dB
Output Voltage
Temperature Coefficient
∆VOUT/
∆T
-40°C≤Topt≤85°C±100 ppm
/°C
Short Current Limit ILIM VOUT=0V 40 mA
Pull-down resistance for CE pin RPD 1.25 2.5 5 MΩ
CE Input Voltage “H” VCEH 1.5 VIN V
CE Input Voltage “L” VCEL 00.25V
Thermal Shutdown Detector
Threshold Temperature
TTSD Junction Temperature 150 °C
Thermal Shutdown Released
Temperature
TTSR Junction Temperature 120 °C
●Dropout Voltage by Output Voltage (Topt=25°C)
Dropout Voltage (V)
Output Voltage
VOUT(V) TYP. MAX.
VOUT=1.5 0.35 0.45
VOUT=1.6 0.30 0.35
VOUT=1.7 0.25 0.30
1.8≤VOUT≤2.0 0.20 0.25
2.1≤VOUT≤2.4 0.15 0.20
2.5≤VOUT≤4.0 0.12 0.18
Rev. 1.10 - 6 -
■ TEST CIRCUITS
5
4
1
2
VOUT
GND
CE
VDD
R1170Hxx1B Series
IN OUT
10µF
1
45
2
VOUT
GND
CE
VDD
IN OUT
Standard Test Circuit
Test Circuit for Ripple Rejection, Input Transient
Response
1
45
2
VOUT
GND
CE
VDD
IN OUT
1
45
2
VOUT
GND
CE
VDD
IN OUT
Supply Current Test Circuit
Test Circuit for Load Transient Response
ISS
Iout
P.G
Iout
I1 I2
10µF10µF
10µF
10µF
10µF
10µF
R1170Hxx1B Series
R1170Hxx1B Series R1170Hxx1B Series
Rev. 1.10 -7-
■ Technical Notes on External Components and Typical Application
Phase Compensation
In these ICs, phase compensation is made with Output capacitor for securing stable operation even
if the load current is varied. For this purpose, use as much as 10µF Capacitor as CL.
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be
unstable. Evaluate your circuit with considering frequency characteristics. Further, refer to the
Typical Characteristics No.12.
Mounting on PCB
Make VDD and GND lines sufficient. If the impedance of these is high, current flows, the noise might
be picked up or be a cause of unstable operation. Further use as much as 10µF Capacitor between
VDD pin and GND pin as close as possible.
Set an Output capcitor between VOUT pin and GND pin for phase compensation as close as possible
.
(Refer to the example of typical application)
Example of the typical application of R1170HxxxB
IN OUT
VDD
CE
GND
VOUT
CI CL
R1170Hxx1B
CI=10
µF(Ceramic), CL=10µF(Ceramic)
Rev. 1.10 - 8 -
■ TYPICAL CHARACTERISTICS
1)Output Voltage vs. Output Current(Topt=25°C)
R1170X151B
0
0.5
1
1.5
2
0 500 1000 1500
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V
VIN=3V
VIN=3.5V
R1170X201B
0
0.5
1
1.5
2
2.5
0 500 1000 1500
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=4V VIN=3.5V
VIN=3V
R1170X301B
0
0.5
1
1.5
2
2.5
3
3.5
0 500 1000 1500
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=5V
VIN=4.5V
VIN=4V
R1170X401B
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 500 1000 1500
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=6V
VIN=5.5V
VIN=5V
2)Output Voltage vs. Input Voltage(Topt=25°C)
R1170X151B
1.1
1.2
1.3
1.4
1.5
1.6
1.7
123456
Input Voltage VIN(V)
Output Voltage VOUT(V)
IOUT = 1mA
IOUT = 10mA
IOUT = 100mA
IOUT = 300mA
R1170X201B
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
123456
Input Voltage VIN(V)
Output Voltage VOUT(V)
IOUT = 300mA
IOUT = 100mA
IOUT = 10mA IOUT = 1mA
Rev. 1.10 -9-
R1170X301B
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
23456
Input Voltage VIN(V)
Output Voltage VOUT(V)
IOUT = 1mA
IOUT = 100mA
IOUT = 300mA
IOUT = 10mA
R1170X401B
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
3.5 4 4.5 5 5.5 6
Input Voltage VIN(V)
Output Voltage VOUT(V)
IOUT = 1mA IOUT = 10mA
IOUT=100mA
IOUT=300mA
3)Dropout Voltage vs. Output Current
R1170X151B
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0 100 200 300 400 500
Output Current IOUT(mA)
Dropout Voltage VDIF(V)
R1170X201B
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 100 200 300 400 500
Output Current IOUT(mA)
Dropout Voltage VDIF(V)
R1170X301B
0
0.05
0.1
0.15
0.2
0.25
0.3
0 100 200 300 400 500
Output Current IOUT(mA)
Dropout Voltage VDIF(V)
R1170X401B
0
0.05
0.1
0.15
0.2
0.25
0 100 200 300 400 500
Output Current IOUT（mA）
Dropout Voltage VDIF(V)
85°C25°C
-40°C85°C
25°C
-40°C
-40°C
25°C
85°C
85°C25°C
-40°C
Rev. 1.10 - 10 -
4)Output Voltage vs. Temperature
R1170X151B
1.40
1.43
1.45
1.48
1.50
1.53
1.55
1.58
1.60
-50 -25 0 25 50 75 100
Temperature Topt
Output Voltage VOUT (V)
IOUT=10mA
VIN=2.5V R1170X201B
1.90
1.93
1.95
1.98
2.00
2.03
2.05
2.08
2.10
-50 -25 0 25 50 75 100
Temperature Topt
Output Voltage VOUT (V)
IOUT=10mA
VIN=3V
R1170X301B
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.15
3.20
-50 -25 0 25 50 75 100
Temperature Topt
Output Voltage VOUT (V)
IOUT=10mA
VIN=4V R1170X401B
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
-50 -25 0 25 50 75 100
Temperature Topt
Output Voltage VOUT (V)
IOUT=10mA
VIN=5V
5)Supply Current vs. Input Voltage(Topt=25°C)
R1170X151B
0
20
40
60
80
100
120
01234567
Input Voltage VIN(V)
Supply Current Iss(uA)
R1170X201B
0
20
40
60
80
100
120
01234567
Input Voltage VIN(V)
Supply Current Iss(uA)
(°C) (°C)
(°C) (°C)
Rev. 1.10 -11-
R1170X301B
0
20
40
60
80
100
120
01234567
Input Voltage VIN(V)
Supply Current Iss（uA)
R1170X401B
0
20
40
60
80
100
120
01234567
Input Voltage VIN(V)
Supply Current Iss(uA)
6)Supply Current vs. Temperature
R1170X151B
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100
Temperature Topt
Supply Current Iss (uA)
VIN=2.5V
R1170X201B
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100
Temperature Topt
Supply Current Iss (uA)
VIN=3V
R1170X301B
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100
Temperature Topt
Supply Current Iss (uA)
VIN=4V
R1170X401B
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100
Temperature Topt
Supply Current Iss (uA)
VIN=5V
(°C) (°C)
(°C) (°C)
Rev. 1.10 - 12 -
7)Dropout Voltage vs. Set Output Voltage(Topt=25°C)
R1170XXXXB
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
11.522.533.54
Set Output Voltage VSET(V)
Dropout Voltage VDIF(V)
IOUT=100mA
IOUT=300mA
IOUT=500mA
8)Ripple Rejection vs. Frequency
R1170X151B
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100
Ripple Frequency f (kHz)
Ripple Rejection RR (dB)
VIN=2.5V+0.5Vp-p
IOUT=100mA
R1170X201B
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100
Ripple Frequency f(kHz)
Ripple Rejection RR (dB)
VIN=3V+0.5Vp-p
IOUT=100mA
R1170X301B
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100
Ripple Frequency f (kHz)
Ripple Rejection RR (dB)
VIN=4V+0.5Vp-p
IOUT=100mA
R1170X401B
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100
Ripple Frequency f (kHz)
Ripple Rejection RR (dB)
VIN=5V+0.5Vp-p
IOUT=100mA
Rev. 1.10 -13-
9)Ripple Rejection vs. Input Voltage
R1170X301B
0
10
20
30
40
50
60
3 3.2 3.4 3.6
Input Voltage VIN(V)
Ripple Rejection RR(dB)
IOUT = 1mA
COUT = 10uF
f = 400Hz
f =1kHz
f = 10kHz
R1170X301B
0
10
20
30
40
50
60
33.23.43.6
Input Voltage VIN(V)
Ripple Rejection RR(dB)
IOUT = 10mA
COUT = 10uF
f = 400Hz
f =1kHz
f = 10kHz
R1170X301B
0
10
20
30
40
50
60
3 3.2 3.4 3.6
Input Voltage VIN(V)
Ripple Rejection RR(dB)
IOUT = 100mA
COUT = 10uF
f = 400Hz
f =1kHz
f = 10kHz
10)Input Transient Response (Topt=25°C)
R1170X151B
1.4
1.45
1.5
1.55
1.6
1.65
1.7
1.75
1.8
0 20 40 60 80 100 120 140 160 180 200
Time t(us）
Output Voltage VOUT(V)
0
0.5
1
1.5
2
2.5
3
3.5
4
Input Voltage VIN(V)
COUT=Ceramic 10uF
IOUT=100mA
tr=tf=10us
Input Voltage
Output Voltage
Rev. 1.10 - 14 -
R1170X301B
2.8
2.9
3
3.1
3.2
3.3
3.4
0 20 40 60 80 100 120 140 160 180 200
Time t(us)
Output Voltage VOUT(V)
0
1
2
3
4
5
6
Input Voltage VIN(V)
COUT=Ceramic 10uF
tr=tf=10us
IOUT=100mA
Input Voltage
Output Voltage
R1170X301B
2.8
2.9
3
3.1
3.2
3.3
3.4
0 20 40 60 80 100 120 140 160 180 200
Time t(us)
Output Voltage VOUT(V)
0
1
2
3
4
5
6
Input Voltage VIN(V)
COUT = Ceramic 4.7uF
tr=tf=10us
IOUT=100mA
Input Voltage
Output Voltage
11)Load Transient ResponseTopt=25°C)
R1170X151B
1.4
1.5
1.6
1.7
1.8
1.9
2
0 20 40 60 80 100 120 140 160 180 200
Time t(us)
Output Voltage VOUT(V)
0
20
40
60
80
100
120
Output Current IOUT(mA)
tr=tf=3us
VIN=2.5V
CIN = Ceramic 10uF
COUT =Ceramic 10uF
Output Current
Output Voltage
Rev. 1.10 -15-
R1170X301B
2.9
3
3.1
3.2
3.3
3.4
3.5
0 20 40 60 80 100 120 140 160 180 200
Time t(us)
Output Voltage VOUT(V)
0
20
40
60
80
100
120
Output Current IOUT(mA)
CIN = Ceramic 10uF
COUT =Ceramic 10uF
tr=tf=3us
VIN=4V
Output Voltage
Output Current
R1170X301B
2.9
3
3.1
3.2
3.3
3.4
3.5
0 20 40 60 80 100 120 140 160 180 200
Time t(us)
Output Voltage VOUT(V)
0
20
40
60
80
100
120
Output Current IOUT(mA)
CIN = Ceramic 10uF
COUT =Ceramic 4.7uF
tr=tf=3us
VIN=4V
Output Current
Output Voltage
12)Stable Area(Topt=25°C,VIN=Set Output Voltage+1V,CIN=Ceramic 10µF)
R1170XXXXB
CE
VIN
Vout
GND ESR
Ceramic
Capacitor
IIout
S.A.
Spectrum
Analyzer
Vin Ceramic
Capacitor
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type capacitor can
be used with this IC.
For your reference, noise level is tested with the circuit as shown above, and if the noise level is 40µV or less than
40µV, the ESR values are plotted as stable area. Upper limit is described in the next four graphs, or ESR vs. Output
Current. (Hatched area is the stable area.)
Rev. 1.10 - 16 -
R1170X151B
0.1
1
10
100
0 200 400 600 800
Output Current IOUT (mA)
ESR（Ohm)
COUT
=Ceramic 10uF
R1170X151B
0.1
1
10
100
0 200 400 600 800
Output Current IOUT
(mA)
ESR（Ohm)
COUT =Ceramic 4.7uF
R1170X301B
0.1
1
10
100
0200 400 600 800
Output Current IOUT
(mA)
ESR（Ohm)
C
OUT
=Ceramic 10uF
R1170X301B
0.1
1
10
100
0 200 400 600 800
Output Current I OUT (mA)
ESR(Ohm)
COUT =Ceramic 4.7uF
