2N2369ACSM
HIGH SPEED , MEDIUM PO WER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PA CKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N2369A for high reliability /
space applications requiring small size and
low weight devices.
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage
VEBO Emitter – Base Voltage
ICCollector Current
PDTotal Device Dissipation @ TA=25°C
Derate above 25°C
PDTotal Device Dissipation @ TC=25°C
Derate above 25°C
TSTG , TJOperating and Storage Temperature Range
40V
15V
4.5V
200mA
360mW
2.06mW / °C
680mW
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 4141
Issue 1
2N2369ACSM
Parameter Test Conditions Min. Typ. Max. Unit
IC= 10mA IB=0
IC= 10µAI
E=0
IE= 10µAI
C=0
VCE = 20V VBE = 0
VCB = 20V TA= +150°C
IC= 10mA IB= 1mA
TA= +125°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA TA= +25°C
IB= 1mA TA= +125°C
TA= –55°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA VCE = 0.35V
TA= –55°C
IC= 30mA VCE = 0.4V
IC= 10mA VCE = 1.0V
IC= 100mA VCE = 1V
IC= 10mA VCE = 10V
f = 100MHz
VCB = 5V IE= 0
f = 140kHz
IC= 10mA
IB1 = IB2 = 10mA
IC= 10mA VCC = 3V
IB1 = 3mA IB2 = 1.5mA
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICES Collector – Emitter Cut-off Current
ICBO Collector – Base Cut-off Current
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* Current Gain
fTTransition Frequency
Cob Output Capacitance
tsStorage Time
ton Turn–On Time
toff Turn–Off Time
15
40
4.5 0.40
30
0.20
0.30
0.25
0.50
0.70 0.85
0.59 1.02
1.15
1.60
40
20
30 120
20
500
4
13
12
18
V
V
V
µA
V
V
—
MHz
pF
ns
* Pulse Test: tp≤300µs, δ≤2%.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 4141
Issue 1
