TOSHIBA $G2000R24,8G2000U24,SG2000W24, SG2000EX24 TOSHIBA GATE TURN-OFF THYRISTOR $G2000R24, $G2000U24, SG2000W24, SG2000EX24 CHOPPER, INVERTER APPLICATION Unit in mm 2-63.5402 DEPTH 2.140.4 Repetitive Peak Off-State Voltage : VpRM=1300, 1600, 1800, 2500V R.M.S On-State Current : IT (RMS) =1050A Peak Turn-Off Current : ITGQM=2000A Critical Rate of Rise of On-State Current : di/dt=300A/ ys Critical Rate of Rise of Off-State Voltage : dv/dt=1000V/ ys 2 395410 MAXIMUM RATINGS < | \ 1)~@) CHARACTERISTIC SYMBOL | RATING | UNIT 3 zl} (gs0%05 COAXIAL $G2000R24 1300 = 93MAX. 3) LEAD Repetitive Peak sG2000u24 | | 1600 | Off-State Voltage (Note 1) | sce000w24 DRM 1800 @-(1) CATHODE SG2000EX24 2500 Od CAT IODE BLACK) Repetitive Peak Reverse Voltage VRRM 16 V 3 GATE (WHITE) Peak Turn-Off Current (Note 2) |ITGQm 2000 A ||JEDEC R.M.S On-State Current (Note 3) |IT (RMS) 1050 A ||EIAJ _ Peak One Cycle Surge On-State Current TOSHIBA 13-93D1A (Non-Repetitive, 10ms Width Half Sine ITSM 14000 A Weight : 800g Waveform) Critical Rate of Rise of Oe te ee di/dt 300 | A/ ys Peak Forward Gate Current IrqmM 70 A Average Forward Gate Power Dissipation |PFG (AV) 14 Ww Average Reverse Gate Power Dissipation |PRG (AV) 120 Ww R.M.S Gate Current (Note 5) |IG (RMS) 42 A Peak Reverse Gate Voltage (at Static)| VRam 16 Vv Operating Junction Temperature Range Tj 40~125| C Storage Temperature Range Tstg 40~150| C Mounting Force 19.6+2.0| kN Note 1. R@K=100 Note 2. Vpsp =600V, Lg=0.3H Note 3. Half Sine Waveform Ts=80C Note 4. Vp=1/2 Rated, IG=30A Note 5. Ambient Temperature of coaxial gate-cathode lead =90C Cg=4uF, Rg=50, digg /dt=40A/ us, IgQz450A, VpM=VpRM, Tj)=125C 96100 1EAA2 TOSHIBA Semiconductor Reliability Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1996-09-02 1/4TOSHIBA $G2000R24,8G2000U24, SG2000W24, SG2000EX24 ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Repetitive Peak Off-State VpRM=Rated, ReK =100, Current IDRM T;=125C 7 7 50 | mA Repetitive Peak Reverse _ 1 9Ko, Current IRRM | VRRM=Rated, Tj=125C = = 10 | mA Repetitive Peak Reverse _ ope Gate Current IRGM__|VrRGM=Rated, T;=125C = = 10 | mA Peak On-State Voltage VIM |IltmM=2000A, Tj=125C = 24] V Gate Trigger Volt Vv ee ee ate Trigger Voltage 88 8 GT lvp=2av, T= 25C | | 10 Gate Tri C ' 1 RL =0.10, T;= 40C | 60] , ate Trigger Curren 88 GT T)= 25C | | 2s Turn-On Delay Time td Vp=1/2 Rated, = = 2.0 | ps di/dt=300A/ us, Ipy=2000A, Turn-On Time tet Ig=30A, tp=1ys, T;=25C _ _ 10 | us eye : VDRM=2/3 Rated, Critical Rate of Rise of Off- dv/dt |T)=125C, Vox = 2V, 1000 | lips State Voltage . ; Exponential Rise Storage Time ts Ip=2000A, Vp=1/2 Rated, {| | 20) ps Gate Turn-Off Time teg VDM=VDRM: Ca=4yF, 23 BS Tail Time ttail digg /dt=40A / ps, _ _ 60 | ys Gate Turn-Off Current IGQ Tj=125C, Lg=0.3H | 450] A Thermal Resistance 9 (Junction to Fin) Rth(j-n {DC | 0.02 }C/ Ww 1996-09-02 2/4TOSHIBA $G2000R24,8G2000U24, SG2000W24, SG2000EX24 10000 INSTANTANEOUS ON-STATE CURRENT tp (A) TURN-ON ENERGY PER A PULSE Eon G) GATE TURN-OFF CHARGE QGqq (WO) it vy (MAX) 5000 3000 Tj= 125C 1000 500 300 100 0 04 0.8 12 = 16 2.0 2.4 28 3.2 INSTANTANEOUS ON-STATE VOLTAGE Vy (V) EON ITM (TYP.) a Vp=1250V A ra iY 900 0.8 LZ ZO MW VA 1.2 di/dt=300A/ ys 0.4 Z Cg=4uF Rg=50, Igy =30A dig /dt=30A/ us Tj =125C 0 0 800 1600 2400 3200 ON-STATE CURRENT Ipy (A) Qcq - ITGQ (TYP.) 6000 4000 a digg/dt=40A/ ys S| Cg=4yF 2000 7 T)=125C f / QcQ L t 0 1000 2000 3000 TURN-OFF CURRENT Itgq A) Eorr () GATE TRIGGER CURRENT Ig? (A) TURN-OFF ENERGY PER A PULSE TAIL TIME ttail (ys) let, Var Tj (MAX) Vp=24V Rp =0.10 GATE TRIGGER VOLTAGE Var () -50 0 50 100 150 JUNCTION TEMPERATURE Tj (C) EOFF ITGQ (TYP.) 4 Vv =2500V DM 3 1800 4 Sho SV YY Vp=1/2VpRM Lf / / digaQ/dt=40A/ ps Co=4uF [Z, say 1 7 Rg =50 y WA Vpgp< 600V 4 Tj =125C Lgs0.8 4H 0 0 1000 2000 3000 4000 5000 TURN-OFF CURRENT Itgq (A) ttail - VD (TYP.) 60 N MN NY TrGQ=2000A 40 PD Cg=4pF T)= 126C -Voex 20 Vac RG =2~VRGM RGN RGN= VGG/(@-IpRM) Go 1 1 ! 0 1000 2000 3000 TURN-OFF VOLTAGE Vp (V) 1996-09-02 3/4TOSHIBA $G2000R24,8G2000U24,SG2000W24, SG2000EX24 ITGqm Cs ITSM tp (MIN.) 2500 2000 1500 1 1000 VpM=VDRM digg /dt=40A/ ps Lg=0.34H Vpsp=600V Tj=125C HALF SINE WAVEFORM 1 /\ ITSM & < = g ne 4 > o 500 a mB s z 3 ie] Qo oe 5 v9) & et 3 mo 9 fa a o w < i ivy PEAK TURN-OFF CURRENT Itagm (A) 0 500 0 1 2 3 4 5 6 0.1 0.3 0.5 1 3 6 10 80 50 100 SNUBBER CAPACITANCE Cg (uF) PULSE WIDTH ty (ms) Tth j- t (MAX.) . CATHODE SIDE (ms) 0.07 ANODE SIDE (ms) ) DOUBLE SIDE (ms) 0.06 CATHODE SIDE (s) 0.05 ANODE SIDE (s) Tth-p CC/W) 0.03 DOUBLE SIDE (s) 0.02 0.01 TRANSIENT THERMAL IMPEDANCE 1 3. 5 10 30 50 100 300500 1000 TIME +t (ms AND s) 1996-09-02 4/4