I6aR INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER ebeE D IGBT, HEXFET, HEXSense and Logic Level Die Mm 4855452 OOl0chL 7 @@ 7-23 9-9o!| IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE 7_y775- international Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England. 7-03-05 COMMERCIAL CHIPS It is possible to buy any of the IGBT, HEXSense and Logic Level products in die form, for your own custom and hybrid applications. If you are a larger user with needs in excess of 100,000 die per annum then it may be worthwhile discussing the use of wafers instead of the discrete components in waffle packs. Whatever your needs, contact your local Sales Office who will be happy to advise you regarding technical details, pricing and delivery. INSULATED GATE BIPOLAR TRANSISTORS IGBTs {nternational Rectifier can now offer its new range of Insulated Gate Bipolar Transistors (IGBTs) in chip form. The (GBT combines the best features of Power MOSFETs and Bipolar Transistors. The ease of drive and rugged operation of HEXFETs, coupled with the low forward voltage drop of Bipolar Devices, results in an optimum solution for low to medium frequency power converters up to 20kHz. IRFCXX -883, ESA, LAT and -VIS MILITARY CHIPS For users who require more than just commercial components International Rectifier can offer four levels of High-Rel screening on chips. VIS provides a 100% visual inspection to Mil-Std 750C method 2072, LAT additionally gives a sample from each wafer lot a series of accelerated life test to establish diffusion stability. ESA provides screening to the recognised ESA/SCC 20460 specification section 4A. 883 provides screening according to MIL-S-833 method 5008 level B. For more details, request a copy of our Controlling Specification E2931 from your Local Sales Office. HEXFET GENERATION Ill The evolution of the HEXFET has given rise to three HEXFET types, each based on a distinct die design philosophy. The HEXFET lil process, detalled in Application Note AN-964, is distinguished by increased and specialised avalanche capability, a high diode-recovery dvidt rating, an increase in maximum allowable die temperature for devices of 100V and below, and a number of other significant technological advances. N-channel : All die supplied are now Generation Ill. P-channel ; 60V and 100V die are Generation Ill. The 200V die continue to be supplied as Generation I. As with Generation | and II die the Generation Ill die are all glass passivated over the active areas with a Silox Phosphor/Silicon Dioxide, compound providing mechanical protection and a degree of hermeticity. THE APPLICATION AND CUSTOM ASSEMBLY OF HEXFET DICE (FROM APPLICATION NOTES AN931 AND AN964) INTRODUCTION This document describes the HEXFET transistors available from International * Rectifier In die form. These power MOS field effect transistor dice feature the same high reliability DMOS technology used for the IRF serles of packaged HEXFETS. The same advanced MOS processing techniques, silicon gate structure, and efficient hexagonal source pattern are avallable in dle form for hybrid assembly, Use of silicon-gate design and state of the art MOS processing techniques result in an extremely reliable device which is highly reproducible in various die sizes. Hybrid packaging of such dle results in substantia! savings in welght and volume compared to standard packaging. HEXFET GENERATION | Only 200V P-channel product continues to be available in Generation I. HEXFET GENERATION Ill HEXFET Generation Ill are ruggedised and have better silicon utilisation than the other two processes. The HEXFET Generation Ill process devices are upwardly compatible with the corresponding HEXFET Generation | and II process components. Low voltage, Generation Ill components will have a Vds of 60V instead of 50V. The HEXFET Generation lil process is distinguished by increased avalanche capability, a much higher diode dv/dt rating, an increase in maximum allowable die temperature of 175C for devices of 100V and below, and a number of other significant technological advances. Full details of these improvements are given in Application Note AN964. HEXSense International Rectifier has introduced a new family of HEXFETs incorporating Current Sensing. This is the HEXSense range of devices. Current Sensing Is achieved by isolating a few of the HEXFET cells from the main source metallisation and providing them with a separate bonding pad. The drain current divides between the sense cells and the main body of cells in a manner determined by the ratio of the number of sense cells to the total number of cells on the die. This ratio being known, the drain current can be determined measuring only the sense current. Since the sense current Is of the order of a few miliiamps the value of the drain current can be determined without incurring significant power losses. The HEXSense die has two extra bonding pads, besides the gate and source pads. These are the Current-sense pad and the Kelvin-source pad. The current-sense pad connects to the sensing cells. The Kelvin- source pad connects to the main source metallisation and is used as a return path for the sense current, A separate return path for this current is required to prevent voltage drops owing to parasitic resistance in the main source path being included in the sense current path. Details of the HEXSense range are given in Table 3 and the die dimensions are included in figures 34 to 38. ELECTRICAL CHARACTERISTICS Each HEXFET die Is individually probed at room ambient temperature fo the electrical specifications shown in Tables 4, 2,3, 4 and 5, Because of limitations when electrically probing In wafer form, some of the generic specifications of the equivalent packaged devices cannot be tested and guaranteed in die form. These are Power Dissipation Pp, Safe Operating area SOA, Thermal Resistance RTH(J-C), On-Resistance at rated currentIGBT, HEXFET, HEXSense and Logic Level Die ~ INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 2bE D m@@ 4855452 0010cb7 9 me T-37 -40 IaR Rps DS(ON) and Inductive Current IL, and sense ratio r. On-Resistance at ID = 1A is tested and guaranteed according to Tables 1, 2, 3 and 4, These above parameters are dependent upon the user's assembly technique. However, the following characteristics are guaranteed by design to meet the specifications of the equiaent part: gfs, Cigs, Cogs, Crgg, and Tj(max) for HEXFET Generation |; gfs, Qo, das, Qgd, dvidt and Tjmax) for HEXFET Generation \il devices. Consult the appropriate data sheet listed in Tables 1 through 4. Following electrical probing, the dice are inked for identification and scribed, The dice are mechanically separated visually inspected then waffle packed for shipment. The relative cell densities of the different generation HEXFET are as follows: GEN | 500,000 cells/in? (100V-500V) GEN {1 800,000 cells/in? (60V-100V) GEN II! 500,000 cells/in? (100V-600V) HANDLING AND SHIPPING HEXFET dice from International Rectifier are shipped in anti-static chip trays and sealed in electrostatic shielding bags for protection during shipment. Once opened, the dice must be stored in a dry, Inert atmosphere such as nitrogen prior to assembly. Dice should be handled with DuPont Teflon-tipped vacuum pencils to prevent mechanical damage. Any non-conformance to the electrical or visual inspection specifictions in this guide must be reported in writing to Intemational Rectifier within 30 days of shipment of the lot by International Rectifier. International Rectifier assumes no responsibilities for die which have been subjected to further processing such as mountdown, wire bonding, or encapsulation. In the interest of product improvement, the right is reserved to make design or processing changes without notification. The anti-static chip trays are designed to avoid the build-up of static charge. International Rectifier HEXFETs have large gate capacitances and thick oxide layers relative to low level MOS devices. Though significantly more rugged than such low level devices, reasonable precautions should be observed during handling and assembly to prevent exceeding the 20V specified maximum gate-source voltage, VISUAL INSPECTION OF DIE International Rectifier HEXFET die are designed to be capable of meeting the visual inspection criteria of Mil-Standard 750C, Method 2072. HEXFET dice are visually screened to a 1.0% AQL level prior to shipment. 100% screening can be obtained by specifying -VIS or higher level testing. DIE MOUNTING The HEXFET dice have chromium-nickel-silver drain metallisation which is suitable for solder preform mounting using solders such as 95/5 PbSn or 92.5/2.5/5 PbiAg/In solder. Gold backing can be made available as an altemative; please contact the factory or your IR Representative for more information. Any of the commonly used header or substrate materials such as copper, nickel- plated copper, and gold plated molybdenum, beryllia, and alumina are acceptable to mount HEXFET die onto. The substrate must be freed of oxides prior to assembly either by chemical cleaning or Ho pre-firing techniques. The HEXFET dice should be cleaned prior to mountdown in deionised water cascade (one minute) followed by isopropl alcohol agitated bath (twice, one minute each) and then dried in a Nitrogen filled chamber at between 70C and 125C. Mounting is generally accomplished in a profiled belt furnace. The furnace zone settings will depend upon hybrid mass density, jigging and belt speed. The HEXFET die temperature must not exceed 400C, nor be in the range of 350C to 400C for greater than one minute. A clean furnace of hydrogen atmosphere is recommended, although nitrogen atmosphere or forming gas {nitrogen-hydrogen 85%-15%) is acceptable. A variety of conductive plastics have been utilised as alternative means of bonding the HEXFET dice to a variety of substrates. WIRE BONDING For electrical connection to the gate and source aluminium bonding pads ultrasonic wire-bonding with Al wire is recommended. The maximum recommended wire diameters are given in Tables 1 to 5 of this shortform. Caution must be exercised during wire bonding to ensure that the bonding footprint remains within the bonding pad area. Likewise, wire bond equipment settings should be optimised and a wire pull test performed (e.g. Method 2037, Mil-Standard 750C) to monitor wire bond strength uniformity. Destructive sample testing and 100% non-destructive testing is recommended, Rebonding on wire bond rejects can be performed although decreased yleld can be expected from such reworks, Using process controls as described above, final assembly yields of 80% to 95% can be achieved. ENCAPSULATION Prior to encapsulation, the die assembly must . be kept in a moisture-free environment, as less and Ipgg particularly are sensitive to surface moisture. If the final package is non- hermetic, a high grade electronic coating such as Dow Corning RTV3140 or equivalent may be applied. If the package is hermetic, the coating is optional. Cleaning of the die in a freon vapour degreaser prior to coating is recommended. T-O | -o 5 immediately prior to encapsulation, a 150C, two hour bake should be performed to remove any surface moisture. Capping of hermetic packages should be performed in a dry nitrogen atmosphere. T-03-05 CONCLUSION The use of power MOSFET dice for hybrid assemblies can result in significant reduction in overall package size. In addition, the high gain characteristics of the HEXFET can allow further miniaturisation by eliminating complex drive circuitry. Several HEXFET dice can readily be mounted on the same heatsink to form circuit configurations or to parallel devices. The HEXFET operational advantages, thereby, can be realised in very compact, custom package configurations.| TaR | INTERNATIONAL RECTIFIER IGBT, HEXFET, HEXSense and Logic Level Die P-CHANNEL min. ~2V max. 4V @ Vpg = Vag, Ip = 250uA. * These dle are available screened to 883, ESA, LAT and VIS'. For further detalls contact your local sates office. INTERNATIONAL RECTIFIER cbE D MM 4855452 00102b8 0 mm 7-39-99 TABLE 1: ELECTRICAL PROBE SPECIFICATIONS FOR N-CHANNEL HEXFET POWER MOSFET DIE HEX Part Vps Rps(on) Figure Recommended Closest Bulletin size Number Bond Wire Size Part Source Gate Number Vv 2 in/mim infmm Zz IRFC1ZOR 100 3.200 1 0.005/0.127 0.005/0.127 IRFS1Z0 PD-9.438 IRFCO14R 60 0.200 2 0.005/0.127 0.005/0.127 IRFZ14 PD-9.507 IRFC110R 100 0.540 3 0.005/0.127 0.005/0.127 IRF510 PD-9.325 4 IRFC210R 200 1.500 4 0.005/0.127 0.005/0.127 IRF610 PD-9.326 IRFC214R 250 2.000 4 0.005/0.127 0.005/0.127 IRF614 PD-9.475 IRFC310R 400 3.600 5 0.005/0.127 0.005/0.127 IRF710 PD-9,327 IRFCO24R 60 0,100 6 0.008/0.203 0.005/0.127 IRFZ24 PD-9.058 IRFC120R 100 0.270 7 0.008/0.203 0.005/0.127 IRF520 PD-9.313 2 IRFC220R 200 0.800 8 0.008/0.203 0.005/0,127 IRF620 PD-9.317 iIRFC224R 250 1.100 8 0.008/0.203 0.005/0.127 IRF624 PD-9,472 IRFC320R 400 1.800 9 0.008/0.203 0.005/0.127 - IRF720 PD-9,315 IRFC420R 500 3.000 9 0.008/0.203 0.005/0.127 IRF820 PD-9,324 IRFCC20R 600 4.400 9 0.008/0.203 0,005/0.127 IRFBC20 _ IRFCO34R 60 0.050 10 0.010/0.254 0.005/0.127 IRFZ34 PD-9.508 IRFC130R 100 0.160 11 0.010/0.254 0.005/0.127 IRF530 PD-9.307 3 IRFC234R 200 0.400 12 0.008/0.203 0.005/0,.127 IRF630 PD-9.309 IRFC234R 250 0.450 12 0.008/0.203 0,005/0.127 IRF634 PD-9.476 IRFC330R 400 1,000 13 0.008/0.203 0.005/0,127 IRF730 PD-9.308 IRFC430R 500 4.500 13 0.008/0.203 0.005/0.127 IRF8&30 PD-9.311 IRFCC30R 600 2.200 13 0.008/0.203 0.005/0.127 IRFBC30 PD-9.482 IRFCO44R 60 0.028 14 0.015/0.381 0.005/0.127 IRFZ44 PD-9.510 IRFC140R * 100 0.077 15 0.015/0.381 0.005/0.127 IRF540 PD-9.373 IRFC240R 200 0.180 16 0.012/0.305 0.005/0.127 IRF640 PD-9.374 4 IRFC244R 250 0.280 16 0.012/0.305. 0.005/0.127 IRF644 PD-9.527 IRFC340R * 400 0.550 17 0.012/0.305 0.005/0.127 {RF740 PD-9.375 IRFC440R * 500 0.850 17 0.012/0.305 0.005/0.127 IRF840 PD-9.376 IRFC448R * 500 0.600 18 0.012/0.305 0.005/0.127 IRFP448 PD-9.376 IRFCC40R 600 1.200 17 0.012/0.305 0,.005/0.127 IRFBC40 PD-9.506 IRFCOS4R 60 - 0.020 18 0.020/0.508 0.005/0.127 IRFPOS4 PD-9.544 IRFC150R * 100 0.055 19 0.020/0.508 0.005/0.127 IRFP150 PD-9.414 IRFC250R 200 0.085 20 0.012/0.305 0.005/0.127 IRFP250 PD-9.443 5 IRFC254R 250 0.140 20 0.012/0.305 0.005/0.127 IRFP254 PD-9.540 IRFC350R * 400 0.300 21 0.012/0.305 0.005/0.127 IRFP350 PD-9.445 IRFC450R * 500 0.400 21 0.012/0.305 0.005/0.127 IRFP450 PD-9.458 IRFCCSOR 600 0.580 21 0.012/0.305 0.005/0.127 IRFPC50 _ IRFC260R 200 0.070 22 0.015/0.381 0.005/0.127 IRFP260 _ 6 IRFC360R 400 0.200 22 0.015/0.381 0.005/0.127 IRFP360 PD-9,518 IRFC460R 500 0.270 22 0.015/0.381 0.008/0.127 IRFP460 PD-9.465 TABLE 2: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL HEXFET POWER MOSFET DIE HEX Part Vps Rpsion) Figure Recommended Closest Bulletin size Number Bond Wire Size Part Source Gate Number Vv a in/mm in/mm IRFC9014R ~60 0.500 23 0.004/0.102 0.004/0.102 IRF9Z14 - 1 (RFC9110R 100 1.200 24 0.004/0.102 0.004/0.102 IRF9510 PD-9.390 IRFC9210 200 3.000 25 0.004/0.102. 0.004/0.102 IRF9610 PD-9.350 IRFC9204R 60 0.280 26 0.008/0.203 0.008/0.203 IRF9Z24 _ 2 IRFC9120R 100 0,600 27 0.008/0.203 0.008/0.203 IRF9520 PD-9.319 IRFC9220 ~ 200 1.500 28 0.008/0.203 0,008/0.203 IRF9620 PD-9.351 IRFC9034R * -60 0.140 29 0.010/0.254 0.010/0.254 IRF9Z34 ad 3 IRFC9130R * 100 0.300 30 0.010/0.254 0.010/0.254 IRF9530 PD-9.320 IRFC9230 200 0.800 31 0,010/0.254 0.010/0.254 IRF9630 PD-9,352 4 IRFC9140R 100 0.250 32 0.020/0.508 0.020/0.508 IRF9540 PD-9.421 IRFC9240 + 200 0.500 33 0.020/0.508 0.020/0.508 IRF9640 PD-9.422 Common Characteristics Rps(on) >: Veg = 10V. Ipss @ Vpg: N-CHANNEL 250uA : P-CCHANNEL ~250uA. lass - + N-CHANNEL 500nA : P-CHANNEL - 100sA. Vasith) N-CHANNEL min. 2V max. 4V @ Vpg = Vas, Ip = 250uA.IGBT, HEXFET, HEXSense ; INTERNATIONAL RECTIFIER | [62 and Logic Level Die 9 9D IVR INTERNATIONAL RECTIFIER abe) mm 4assus2 oolozbs 2 ml 7 -39- TABLE 3: ELECTRICAL PROBE SPECIFICATIONS FOR N-CHANNEL HEXSense POWER MOSFET DIE HEX Part Vos Rps(on) | Nominal | Figure Recommended Closest Bulletin size Number : Sense Bond Wire Size Part Ratio Source Gate Number Vv 2 infmm infmm 2 IRCC024 60 0.100 780 34 IRCZ24 PD-9.564 IRCC034 60 0.050 1512 35 IRCZ34 PD-9.545 IRCC130 100 0.160 1500 36 IRC530 PD-9.454 3 IRCC230 200 0.400 1490 36 IRC630 PD-9.565 IRCC234 250 0.450 1500 36 0.003/0.076 IRC634 PD-9,565 IRCGC330 400 1.000 1410 36 IRC730 PD-9.567 IRCC430 500 1.500 1500 36 0.010/0.254 to IRC830 PD-9.455 IRCC044 60 0.028 2820 37 0.005/0.127 IRCZ44 PD-9,529 IRCC140 100 0.077 2670 38 IRC540 PD-9.498 4 IRCC240 200 0.180 2670 38 IRC640 PD-9.568 IRCC244 250 0.280 2670 38 IRC644 PD-9.569 IRCG340 400 0.550 2670 38 IRC740 PD-9.570 IRCC440 500 0.850 2670 38 IRC840 PD-9.501 TABLE 4: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL LOGIC LEVEL MOSFET DIE HEX Part Vps Rps(on) Figure Recommended Closest Bulletin size Number Bond Wire Size Part Source Gate Number Vv Q infmm infmm { IRLCO14 60 0.300 2 0.005/0.127 0.005/0.127 IRLZ14. PD-9.556 IRLC110 100 0.750 3 0.005/0.127 0.005/0.127 IRL510 PD-9.560 2 IRLC024 60 0.150 6 0.008/0.203 0.005/0.127 IRLZ24 PD-9,557 IRLC120 100 0.400 7 0.008/0.203 0.005/0.127 IRL520 PD-9.561 3 IRLCO34 60 0.070 10 0.010/0.254 0.005/0.127 IRLZ34 PD-9.558 . IRLC130 100 0.220 11 0.010/0.254 0.005/0.127 IRL&30 PD-9.562 4 IRLC044 60 0.040 14 0.015/0.381 0.005/0.271 IRLZ44 PD-9.659 IRLC140 100 0.110 15 0.015/0.381 0.005/0.271 IRL540 PD-9.563 TABLE 5: ELECTRICAL PROBE SPECIFICATIONS FOR INSULATED GATE BIPOLAR TRANSISTOR DIE HEX Part Vps Rpsjon) Figure Recommended Closest Bulletin size Number Bond Wire Size Part Emitter Gate Number Vv n infmm in/mm 2 IRGCC20 600 4.0 39 0.012/0.305 0.005/0.127 IRGBC20 PD-9.626 IRGCC26 600 25 39 0.012/0.305 0.005/0.127 IRGBC26 PD-9.669 3 IRGCC30 600 3.8 40 0.015/0.381 0.005/0.127 IRGBC30 PD-9.619 IRGCC3E. 600 2.3 40 0.015/0.381 0,005/0.127 IRGBC36 PD-9.668 4 IRGCC40 600 3.6 41 0.020/0.508 0.005/0.127 IRGBC40 PD-9.627 IRGCC46 600 18 41 0,020/0.508 0.005/0.127 IRGBC46 PD-9.667 5 IRGCCS50 600 3.1 42 0.020/0.508 0.005/0.127 IRGPC5O PD-9,664 IRG@CC56 600 1.6 42 0.020/0.508 0.005/0.127 IRGPC56 PD-9.662 Common Characteristics Rps(on) HEXSense Vag = 10V. Logic Level Vag = 4V. Ipss @ Vos: HEXSense ~ 250uA : Logic Level 250yA. lass HEXSense S00nA : Logic Level 500nA. Vasith) HEXSense min. 2V max. 4V @ Vos = Ves; Ip = 250uA. Logic Level min. 2V max. 4V @ Vpg = Vos = Vas: Ip = 250A. VGE(th) IGBT min. 2.5V max. 5V @ Vos = Vag, Ip = 250uA. Ices @ Veg: IGBT 250uA max. Veco = OV. IGES : IGBT +600na max. Veg = +20V.IGBT, HEXFET, HEXSense TOR | INTERNATIONAL RECTIFIER and Logic Level Die INTERNATIONAL RECTIFIER 26 D M 4855452 0010270 9 mf T-39-4Q DIE AND BONDING PAD DIMENSIONS | 1 2 3 a ee ik tf 0023 rE __ Ww. YU2s We= 0025 rt [| = Pop os aa 2 ry tT : mm fom |e ca er _ oral ome | | La 208 Le 9086 t= goat t I i Le 0,020 GATE is 908 GATE i Y i i 1 HEX-1: 60V, N-CHANNEL HEX-1: 100V, N-CHANNEL HEX-Z: 100V, N-CHANNEL LOGIC LEVEL: HEX-1: 60V, N-CHANNEL LOGIC LEVEL: HEX-1: 100V, N-CHANNEL 4 5 6 : TT, _ T SOURCE L = 9030 SOURCE L = 9018 SOURCE 1 ye i L = 2018 : 0.45 i | ; | L= Soy. L= 9020 L= A GATE | GATE ONE We 8. i W = 0025 | w= 4 HEX-2: 60V, N-CHANNEL HEX-1: 200V & 250V, N-CHANNEL HEX-1: 400V, N-CHANNEL LOGIC LEVEL: HEX-2: 60V, N-CHANNEL 7 8 9 , - Wea 9032 We 9088 - { i SOURCE sous L = 908 SOURCE L y iL = 0025 L = 0024 063 O6t i = oe L = $e t= 8 Ls 9018 L= onea t | one a t eae L = 908 : rj f j y HEX-2: 100V, N-CHANNEL LOGIC LEVEL: HEX-2: 100V, N-CHANNEL HEX-2; 200V & 250V, N-CHANNEL HEX-2: 400V, 500V, & 600V, N-CHANNEL All dimensions In millimetres (inches) 6IGBT, HEXFET, HEXSense and Logic Level Die INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER me 4a8S54S2 0010271 Oo mi 7 -39-9O DIE AND BONDING PAD DIMENSIONS cont'd. IaR = 0060 [= ts ' t t = 9040 \ L = 00M SOURCE 4 : = W182 b= = 0020 i t= ost : ; 4 rw = OF wu 64 HEX-3: 60V, N-CHANNEL LOGIC LEVEL: HEX-3: 60V, N-CHANNEL che D 11 _ 9041 * mW = oe t E SOURCE : i _ 0031 L = O79 | L = 91148 5 5 = 0018 | L = oo4g GATE w . 0025 W = O64 -<_ WW = 9106 ___ 2 HEX-3: 100V, N-CHANNEL LOGIC LEVEL: HEX-3: 100V, N-CHANNEL f+} = Gat ) i SOURCE i Fe | L = 905 i : i | = 0181 l= G60 | i = 0018 : Ls q42 + one - W = 9028 we gig 088 295 HEX-3: 200V & 250V, N-CHANNEL 4 -- -ee W ss 1053 1. 00s 084 062 [sue = 0180 Ls G57 = O09 b= ag i | GATE = O16 W= 395 HEX-3: 400V, 500V, & 600V, N-CHANNEL 14 WB L = 9659 SOURCE { GATE _* <r} W= 9 -w= oi 32 HEX-4: 60V, N-CHANNEL LOGIC LEVEL: HEX-4: 60V, N-CHANNEL 15 [w= 990-4 ' - L = 008 SOURCE t 0.192 Us 4s L = 0018 oe t | care t 0.025 ne = gt 1 HEX-4: 100V, N-CHANNEL LOGIC LEVEL: HEX-4; 100V, N-CHANNEL 963 pW = Tp rf + L = 008 SOURCE at 0219 L = G56 0018 Ls gar. Gare tb. | goat \ We g6g- i a i We ati HEX-4: 200V & 250V, N-CHANNEL 17 lew = 2518 J t L = SOF SOURCE t oF b= ae f GATE HEX-4: 400V, 500V, & 600V, N-CHANNEL 047 ew = 19 I } L = O05 SOURCE = L = 2020 i + ' GNe i = be --W = 292 __ HEX-4.5; S00V, N-CHANNEL All dimensions in millimetres (inches)T6aR | INTERNATIONAL RECTIFIER IGBT, HEXFET, HEXSense and Logic Level Die INTERNATIONAL RECTIFIER ChE D MM 4855452 0010272 2 T- 39-96 DIE AND BONDING PAD DIMENSIONS cont'd. 19 20 21 b-W ae Vl w= at t wag SOURCE wa $80 t I r b= 90] source L= 1-3 SAE = = | i i | 8 i | Cu rT =a a 3 ie = Ww we HEX-5: 60V, N-CHANNEL HEX-5: 100V, 200V, & 250V, N-CHANNEL HEX-5: 400V, 500V, & 600V, N-CHANNEL 22 23 24 Ws a Lae W = o0es w 0.023 e O88 i= 908 SOURCE x | | ! Ls 051 SOURCE 7 | = 9088 1 0.082 source 1 = Be 020 2.18 L = 9.051 ~ | Ls ae | Fr = noe = " GATE { eave jw = 4085. w= Te tw gs wo we Sey HEX-6: 200V, 400V & S00V N-CHANNEL HEX-1: -60V, P-CHANNEL HEX-1: -100V, P-CHANNEL 25 26 27 be WY age |}-+| Wa = w= 8 5 _ ig= oo Gare L= eal | SOURCE | * om t= Ta 148 L = gi L = 90 GATE aoe bs = 030 SOURCE w= Wes . ate ow w= 9102 } Ws = rc} = | awa HEX-2: -60V, P-CHANNEL +}* ad W175 W= oat HEX-1: ~200V, P-CHANNEL GEN | HEX-2: -60V, P-CHANNEL HEX-2: -100V, P-CHANNEL Ail dimensions in millimetres (inches)INTERNATIONAL RECTIFIER | TOaR IGBT, HEXFET, HEXSense and Logic Level Die me 4855452 ool0273 4 mm 1-39-90 ~ INTERNATIONAL RECTIFIER 2bE D DIE AND BONDING PAD DIMENSIONS contd. 28 29 30 hat Vl oe 099 | 060 t= OS SOURCE . aoe4 GATE be = 152 71 i lg * 061 ; i Ls 1a SOURCE t= tae 0.152 t= 86 = 9 L = 9020 OL = a GATE tg = 90s SOURCE E we 0028 058 Ws oe w= Oe HEX-2: -200V, P-CHANNEL GEN | HEX-3: -60V, P-CHANNEL HEX-3: -100V, P-CHANNEL 31 32 33 be Wo OF . w= 9060 | Wo = ae ot] _ 1 = dg souree oe] one ls = | SOURCE t CHE lg = el SOURCE W = 2025. We = Si0 4 064 wg = a jy = S08 _ w = i HEX-3: -200V, P-CHANNEL GEN | HEX-4: -100V, P-CHANNEL HEX-4: -200V, P-CHANNEL GEN | 34 35 36 SK = SQUACE KELVIN 1S = CURRENT SENSE SK = SQURCE KELVIN (S = CURRENT SENSE w= 2088 SK = SOURCE KELVIN po ize 1S = CURRENT SENSE rT Le 636 SOURCE 4 a L= eey L= oR = 0 t= - 0-98 Gate = . he Wa a HEXSense-2: 60V, N-CHANNEL HEXSense-3: 60V, N-CHANNEL HEXSense-3: 100V TO 500V, N-CHANNEL All dimensions in millimetres (inches)TeaR | INTERNATIONAL RECTIFIER =a INTERNATIONAL RECTIFIER DIE AND BONDING PAD DIMENSIONS cont'd. IGBT, HEXFET, HEXSense and Logic Level Die 2bE D MM 4855452 o010274 & mt T-39-TO 37 38 39 r te Or ane ytd EMITTER | | = 9 9,091 HEXSense-4: 60V, N-CHANNEL HEXSense-4: 100V TO 500V, N-CHANNEL IGBT: HEX-2: 600V 40 A 42 = O 8 m= oa = ae 0.0 cHE 0.51 | earn # wt oarTa et y___- @ IGBT: HEX-3: 600V IGBT: HEX-4: 600V IGBT: HEX-5: 600V Chip Tray Capacity by Die Size HEXFET DIE HEX-Z | HEX-1 | HEX-2 | HEX-3 | HEX-4 | HEX-4.5 | HEX-5 | HEX-6 Chip Tray Capacity 400 140 96 45* 35 16 16 15 *35 for Generation |. Please note that chips are only sold in multiples of the trays shown above. Dimensional Tolerances Bonding Pad L or W: < 0.025 in., Tolerance = +0.0005 in. > 0,025 in., Tolerance = +0.001 in. Overall Die L or W: < 0,050 In., Tolerance = +0.004 in. > 0.050 in., Tolerance = +0.008 In. Die Thickness 0.0187 + 0.001 in. / 0.475 + 0.02 mm. All dimensions In millimetres (inches) 10HEXFET Die Outlines Mm 485545e 0016045 679 BBINR Appendix F HEX-2: 100V, N-CHANNEL LOGIC LEVEL HEX-2: 100V, N-CHANNEL HEX-2: 200V & 250V, N-CHANNEL 0.63 bt 0.16 0.15 ba 0.58 b3 f (0.025) | (0.0084) [7 (0.0061) rT (0.023) { 1 1 | L | 0.47 SOURCE 0.51 (0.019) | {[s] (0.020) SOURCE pO to 0.15 0.15 (0.0061) (0.0059) 1.09 2.18 2.21 (0.043) (0.086) (0.087) | J { 0.51 (0.020) GATE (0.018) GATE 4 7 | Nl | | 0.57 | 0.89 0.66 (0.035) 1.92 (0.022) (0.026) b (0.076) ' ] 1.61 (0.064) HEX-1: 60V, N-CHANNEL HEX-1: 100V, N-CHANNEL HEX-Z: 100V, N-CHANNEL LOGIC LEVEL: HEX-1: 60V, N-CHANNEL LOGIC LEVEL: HEX-1; 100V, N-CHANNEL D4 0.61 DS 0.61 (0.024) (0.024) Lt i | | soe 0.46 (0.018) SOURCE | | t | 0.45 (0.018) 2.21 2.68 (0.087) (0.106) t 0.43 GATE { (0.017) GATE im 1 (0.028) 0.44 Lf 0.63 (0.017) (0.025) 1.70 . | 1.96 (0.067) (0.077) HEX-2: 60V, N-CHANNEL HEX-1: 200V & 250V, N-CHANNEL HEX-1: 400V, N-CHANNEL LOGIC LEVEL: HEX-2: 60V, N-CHANNEL D7 0.82 D8 D9 0.84 tT Ty (0.032) 0.84 0.033 { rT (0.033) { ! | ian 0.61 { t t SOURCE 0.61 (0.024) 058 (0.004) SOURCE t (0.023) SOURCE | f 2.92 2.59 0.115) 0.46 3.44 0.46 O15) | (0.018) (0.102) (0.138) (0.018) t 0.46 i GATE (0.018) GATE | 7 } | , 059 GATE j 0.63 (0.023) Los, 2.31 0026 2.10 (0,091) 7 (0.026) (0.082) 2.48 = (0.098) HEX-2: 400V & S00V N-CHANNEL SEE NOTES FOR TOLERANCES AND ALL OTHER INFORMATION PAGE 1534 1529 ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES) BSE D INTERNATIONAL RECTIFIER Yada eye ste)BSE D INTERNATIONAL RECTIFIER Appendix F Me 4455452 0016046 SOS MMINR HEX-2 600V, N-CHANNEL HEX-2: B00V, 900V & 1000V, N-CHANNEL HEXFET Die Outlines D10 084 D141 Di2 CTT { 1.52 tL (0.088) 0.53 0.65 ) (0.060) 0.63 (0.021) 028 SOURCE source 3.86 3.53 3.63 (0.152) (0.139) oa (0.143) 0.51 , (0.020) 6 | 4 | [0.58 GATE 0.58 (0.023) _ (0.023) 3.64 rm Ly one 3.56 (0.144) 2.49 (0.027) (0.140) (0.098) HEX-3: 60V, N-GHANNEL LOGIC LEVEL: HEX-3: 60V, N-CHANNEL HEX-3: 600V, N-CHANNEL D13 CT 1.04 D14 0.85 D15 0.85 (0.041) . (0.034) t | (0.084) | _ 0.74 { - ' { (0.029) SOURCE SOURCE } t | 0.63 0.63 (0.025) (0.025) 3.75 448 (0.148) 4.60 (0.175) 0.46 (0.181) (0.018) 0.48 { 0.42 (0.018) GATE (0.016) 4. t . i GATE 0.64 GATE ; 4 0.025 . L 26g '-05) | OE t 0.66 (0.106) (9.028) vos (0.026) . 2.95 : HEX-3; 100V, N-CHANNEL o1t6) (0.115) LOGIC LEVEL: HEX-3: 100V, N-CHANNEL = HEx-3: 200V & 250V, N-CHANNEL | HEX-3: 400V & S00V, N-CHANNEL 0.84 178 D16 (0.039) D17 080 oe + (0.070) 7 i | ~ (0.032) r [source] {+ 1.26 1 $ (0.050) SOURCE } 0.63 0.61 (0.025) (0.024) 4.57 5.23 (0.180) (0.208) (0.227) 0.49 (0.018) { 0.50 +. (0.020) GATE 1 f i gL. 0.72 __ | 8 I Babe ) 0.66 t+ (0.026) 4.42 _| LL. 057 2.95 (0.174) 4.32 (0-922) (0.116) iL HEX-3: 800V, S00V & 1000V, N-CHANNEL (0.170) _* LOGIC LEVEL: HEX-4: 60V, N-CHANNEL SEE NOTES FOR TOLERANCES AND ALL OTHER INFORMATION PAGE 1534 1530 ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES)HEXFET Die Outlines Me 4855452 0016047 D19 1.78 1.65 (0.065) 4.57 (0.180) Ls] 0.51 0.56 (0.020) (0.022) 4.32 (0.170) HEX-4: 50V & 60V, N-CHANNEL D20 1.53 (0.060) 1,07 (0.042) SOURCE 4.88 (0.192) 0.46 (0.018) 0.63 (0.025) 4.32 (0.170) HEX-4: 100V, N-CHANNEL LOGIC LEVEL: HEX-4: 100V, N-CHANNEL 44) MBINR Appendix F p21 , 1.60 (0.063) { T 1.07 (0.042) SOURCE t 5.56 (0.219) 0.46 (0.018) { |_| GATE] | 0.68 (0.027) 4.11 (0.162) HEX-4: 200V & 250V, N-CHANNEL HEX-4.5: 500V, N-CHANNEL D22 023 D24 1.78 1.24 (0.070) (0.049) - 0.63 0.84 0.94 0.025 (0.037) SOURCE! ( ) | (0.033) T ' 5.76 1.65 6.10 (0.227) 5.64 (0.065) (0.240) (0.222) 0.51 0.53 (0.020) ou i g G T 0.51 . _ 0.66 0.020 To Ct o74 keke) (0-020) (0.029) 5.64 7 Fo o22 4.32 (0.222) {0.022} . 4.32 (0.170) (0.170) HEX-4: 400V, 500V & 600V, N-CHANNEL HEX-4: 800V, 900V & 1000V, N-CHANNEL HEX-4.1: 60V, N-CHANNEL D25 119 D26 D27 \ | (0.047) 2.03 1.76 | ) (0.080) {0.069} s : 2 7] 7 (0.080) 0.88 (0.038) 653 6.53 1.29 6.53 (0.257) (0.257) } (0.051) (0.257) 0.51 (0.020) 6 0.58 0.67 6 . 6 . t - 6 O19) (0.023) 0.46 (0.026) L 0.84 6.53 (0.018) 6.53 (0.032) (0.257) (0.257) 4.88 (0.192) HEX-5: 60V, N-CHANNEL HEX-5: 100V, 200V, 250V, 400V & 500V N-CHANNEL SEE NOTES FOR TOLERANCES AND ALL OTHER INFORMATION PAGE 1534 1531 ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES) bSE D INTERNATIONAL RECTIFIER APPENDICESBSE D INTERNATIONAL RECTIFIER Appendix F Mme 48554Se 0016048 364 MMINR J | GL. 0.76 0.51 | (0.030) (0.020) | 6.53 (0.257) HEX-5; 600V, N-CHANNEL Gl. 0.91 0.46 (0.036) (0.018) 6.50 (0.256) HEX-5S: 800V, 900V & 1000V, N-CHANNEL HEXFET Die Outlines D28 p29 D30 1.04 2.03 oF Bho : ona 0.79 (0.037) 653 | (0.031) 732 203 (0.288) : {0.257} (0.080) (0.360) 0.$1 6.53 0.69 (0.020) (0.027) (0.257) HEX-6: 60V, N-CHANNEL HEX-1: 200V, P-CHANNEL GEN 1 D31 1.59 D32 D33 oes (0.063) 0.58 L rt (0.023) | | {0.025} 0.47 0.51 SOURCE 122 0.020) SOURCE (0.018) (0.052) | t 9.15 2.18 2.44 SOURCE (0.360) (0.086) (0.091) 0.58 Lt 41 (0.023) { 28 0) GATE ( oat) GATE 0.57 } f i } lel. 9.74 (0.022) | 0.65 L (0.029) 1.92 (0.025) | 6.53 (0.076) 1.78 (0.257) (0.070) HEX-6: 400V & SO0V, N-CHANNEL HEX-1: 60V, P-CHANNEL HEX-1: 100V, P-CHANNEL D34 0.36 D35 D36 0.014 -et 1.02 0.82 | Feo) (0.040) | (0.032) [s ] 0.75 0.64 SOURCE f (0.030) SOURCE (0.025) 0.30 t t (0.012) 2.44 320 290 (0.091) os! (0.126) 0.46 (0.114) (0.020) (0.018) td tL GATE GATE GATE j { ' 0.67 | 0.38 0.62 (0.026) o.012 (0.015) asg (0004) 241 | ee dbo e302) (0.098) HEX-2: 60V, P-CHANNEL HEX-2: 100V, P-CHANNEL SEE NOTES FOR TOLERANCES AND ALL OTHER INFORMATION PAGE 1534 1532 ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES)HEXFET Die Outlines mm 4ass4S2 0016049 eh4 ME INR Appendix F HEX-3: 200V, P-CHANNEL HEX-4: 100V, P-CHANNEL p37 5.02 D p39 | 1.00 3 7 Fecey . 38 om ~~ T SOURCE cones 4.02 9 8 (0.040) 0.80 (0.023) (0.032) 3.86 013 457 (0.137) (0.020) (0.152) oa 0.46 ij (0.018) 0.61 t i GATE [058 (0.024) C2.) as | t 0.79 ~~ 3.64 T _ 2 (0148 Lal ose | 880i aap (0.025) (0.087) (0.114) ' HEX-2: 200V, P-CHANNEL GEN 1 HEX-3: 60V, P-CHANNEL HEX-3: 100V, P-CHANNEL D4 0.85 4 D42 0 r | (0.034) D41 - ie source} i | (0.060) j (0.063) 1.07 (0.042) SOURCE (0.042) SOURCE 0.63 (0.025) T T 4.88 4.60 556 (0.181) 088 (0.192) (0219) (0.018) 047 (00 6) 7 (0.018) , TP ee 6 0.64 t es | (0.025) j 4.32 4 Lo (0.028) (0.170) an (0.027) 295 _ m (0.162) 7 (0.116) HEX-4: 200V, P-CHANNEL D43 1.02 | (0.040) [7 0.76 (0.030) | SOURCE ' i f 1 ri 0.58 (0.023) 051 | x | (0.020) ry 3.63 os (0.143) (0.021) is 083 if be4 (0.021) 0.53 (0.021) GATE [ose (0.023) 2.36 | 1 (0.093) HEXSense-2: 60V, N-CHANNEL D44 1.22 (0.048) 0.91 (0.036) SOURCE [a [s] 4.53 (0.178) 0.54 (0.021) 0.51 0.58 {0.020) (0,023) 2x 3.30 3X (0.130) HEXSense-3: 60V, N-CHANNEL D45 1.00 (0.039) SOURCE] 0.51 0.75 (0.020) (0.030) (sx) t 3.80 [is] (0.150) i G T 0.52 0.39 021 0.40 (0,015) ) L040, 2x 3.80 m (0.150) HEXSense-3: 100V TO 500V, N-CHANNEL SEE NOTES FOR TOLERANCES AND ALL OTHER INFORMATION PAGE 1534 1533 ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES) BSE D INTERNATIONAL RECTIFIER APPENDICESMe 4455452 0016050 T3b MHINR Appendix F HEXFET Die Outlines D46 wey 1-78 D47 1.60 D48 (0.070) | (0.063) [~~ 2.03 (0.080) SQURCE SOURCE 2x 0.51 1.27 be 1.09 0.84 (0.050) nS {0.020)| | (0.043) (0.021) { ] 0.51 SOURCE {i3] 5.76 t 5.76 | (0-020) = . 0.58 t J (0.227) (0.227) ed (0.023) 0.46 (0.018) 0.41 Le 0.52 ts) 2X a 053 | | (0.016) (0.020) (0.021) 2x 6] 0.57 { L (0.019) (0.022) S G 2x 6.53 ax j (0.257) 051 ji 957 t 0.62 ax : ang (0:022) 0.47 (0.024) (0.020) -+_-. . I (0.018) ___ 4.34 (0.171) , (0.171) HEXSense-4: 60V, N-CHANNEL HEXSense-4: 100V TO 500V, N-CHANNEL HEXSense-5: 60V, N-CHANNEL Dag D50 D51 1.79 1.21 , (0.048) (9.071) INTERNATIONAL RECTIFIER BSE D source] 0.51 (0.01 6) 71 | (0.020) 2x | 6.60 (0.260) + 0.52 (0.021) G 0.55 0.39 | (0.022) (0.015) 6.55 (0.258) HEXSense-5: 100V TO 500V, N-CHANNEL D52 NOTES: 1 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2 CONTROLLING DIMENSION: (INCH). 3. LETTER DESIGNATION: S = SOURCE SK = SOURCE KELVIN G = GATE IS = CURRENT SENSE 4, DIMENSIONAL TOLERANCES: BONDING PADS: < 0.635 TOLERANCE = +- 0.013 WIDTH < (0.0250) TOLERANCE = 4/- (0.0005) & > 0.635 TOLERANCE = 4/- 0.025 LENGTH > (0.0250) TOLERANCE = 4/- (0.0010) OVERALL DIE: < 1.270 TOLERANCE = 4/- 0.102 WIOTH < (0.080) TOLERANCE = 4/- (0.004) & LENGTH > 0.635 TOLERANCE = 4/- 0.208 > (0.050) TOLERANCE = +/- (0.008) 5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III FOR ADDITIONAL INFORMATION, SEE TABLE 1 SELECTION GUIDE ON PAGE xxi ALL DIMENSIONS SHOWN IN MILLIMETERS (INCHES) 1534