2N6798 Data Sheet November 1998 File Number 1903.2 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features The 2N6798 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. * rDS(ON) = 0.400 Formerly developmental type TA_____. * Majority Carrier Device Ordering Information * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" PART NUMBER 2N6798 PACKAGE TO-205AF * 5.5A, 200V * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance BRAND 2N6798 Symbol NOTE: When ordering, include the entire part number. D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE (c)2001 Fairchild Semiconductor Corporation 2N6798 Rev. A 2N6798 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Source Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulse Source Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 2N6798 200 200 5.5 3.5 22 20 5.5 22 25 0.20 -55 to 150 UNITS V V A A A V A A W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 0.25mA 200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 0.5mA 2.0 - 4.0 V Gate to Source Leakage IGSS VGS = 20V, VDS = 0V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V - - 250 A On State Voltage (Note 2) On Resistance (Note 2) VDS = 160V, VGS = 0V, TC = 125oC - - 1000 A VDS(ON) VGS = 10V, ID = 5.5A - - 2.20 V rDS(ON) VGS = 10V, ID = 3.5A, TA = 25oC VGS = 10V, ID = 3.5A, TA = 125oC TC = 25oC, IS = 5.5A, VGS = 0V - 0.25 0.400 - - 0.750 0.7 - 1.4 V Diode Forward Voltage (Note 2) VSD Forward Transconductance (Note 2) gfs Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = 5V, ID = 3.5A 2.5 4.5 7.5 S VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) 350 600 900 pF 100 250 450 pF 40 80 150 pF VDD 77V, ID = 3.5A, ZO = 50, (Figure 15) MOSFET Switching Times are Essentially Independent of Operating Temperature. - - 30 ns - - 50 ns - - 50 ns - - 40 ns VDS = 160V, ID = 155mA (Figures 19, 20) 25 - - W VDS = 4.5V, ID = 5.5A (Figures 19, 20 25 - - W - - 5.0 oC/W - - 175 oC/W MIN TYP MAX UNITS - 450 - ns - 3.0 - C tf Safe Operating Area SOA Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA Free Air Operation Source to Drain Diode Specifications PARAMETER Reverse Recovery Time Reverse Recovered Charge SYMBOL trr QRR TEST CONDITIONS TJ = 150oC, ISD = 5.5A, dISD/dt = 100A/s TJ = 150oC, ISD = 5.5A, dISD/dt = 100A/s NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedence curve (Figure 3). (c)2001 Fairchild Semiconductor Corporation 2N6798 Rev. A 2N6798 Typical Performance Curves Unless Otherwise Specified 6.0 POWER DISSIPATION MULTIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 4.8 3.6 2.4 1.2 0 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 ZJC, NORMALIZED THERMAL IMPEDANCE 1 0.5 PDM 0.2 0.1 0.1 t1 t2 t2 0.05 0.02 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 25 102 10V 10 10s 100s 1ms 1.0 10ms TC = 25oC TJ = MAX RATED RJC = 5k/W SINGLE PULSE 0.1 1.0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 7V 15 VGS = 6V 10 5V 4V DC 102 20 5 100ms 10 VDS, DRAIN TO SOURCE VOLTAGE (V) (c)2001 Fairchild Semiconductor Corporation 80s PULSE TEST 8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) OPERATION IN THIS AREA LIMITED BY rDS(ON) 103 0 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 5. OUTPUT CHARACTERISTICS 2N6798 Rev. A 2N6798 Typical Performance Curves Unless Otherwise Specified (Continued) 25 10V 9V 20 8V 80s PULSE TEST 10 20 ID DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80s PULSE TEST 7V 15 10 VGS = 6V 5 5V 5 2 1.0 TJ = -55oC TJ = 25oC TJ = 125oC 0.5 0.2 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 0 5 FIGURE 6. SATURATION CHARACTERISTICS 2.0s PULSE TEST NORMALIZEDDRAIN TO SOURCE ON RESISTANCE 2.2 0.6 ON RESISTANCE RDS(ON), DRAIN TO SOURCE VGS = 10V VGS = 20V 0.2 0 10 20 30 ID, DRAIN CURRENT (A) 1.0 0.6 0 -40 80 40 120 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 20 IDR, REVERSE DRAIN CURRENT (A) 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 40 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.15 1.05 0.95 0.85 0.75 -40 ID = 3A VGS = 10V 1.8 0.2 0 10 FIGURE 7. TYPICAL TRANSFER CHARACTERISTICS 0.8 0.4 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE (c)2001 Fairchild Semiconductor Corporation 102 5 2 TJ = 150oC 10 0.5 TJ = 25oC 0.2 1.0 0 1 2 3 4 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE 2N6798 Rev. A 2N6798 Typical Performance Curves Unless Otherwise Specified (Continued) 2000 10 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1600 8 C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE (S) 80s PULSE TEST TJ = -55oC TJ = 25oC 6 TJ = 125oC 4 CISS 800 COSS 400 2 0 1200 CRSS 0 5 10 15 ID, DRAIN CURRENT (A) 20 0 25 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VGS, GATE TO SOURCE VOLTAGE (V) 20 ID = 11A VDS = 40V 15 VDS = 100V VDS = 60V 10 5 0 0 8 16 24 32 40 Qg, TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE (c)2001 Fairchild Semiconductor Corporation 2N6798 Rev. A 2N6798 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tr VDS RL tf 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS 0 VGS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2F 50% PULSE WIDTH FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% 10% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS 2N6798 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1