BD137 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

•DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

•BD 135, 137, 139 are complementary with BD 136, 138, 140

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Type

ÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

BD 135

BD 137

BD 139

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎ

BD 135

BD 137

BD 139

ÎÎÎÎÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

1.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

1.25

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

12.5

100

ÎÎÎÎ

Watt

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

–55 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎÎ

θJA

ÎÎÎÎÎÎÎÎ

100

ÎÎÎÎ

C/W



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD135/D

 Motorola, Inc. 1995







1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

45, 60, 80 VOLTS

10 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

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2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Type

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

UnIt

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage*

(IC = 0.03 Adc, IB = 0)

ÎÎÎÎ

BVCEO*

ÎÎÎÎ

BD 135

BD 137

BD 139

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TC = 125

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.005 A, VCE = 2 V)

(IC = 0.15 A, VCE = 2 V)

(IC = 0.5 A VCE = 2 V)

ÎÎÎÎ

hFE*

ÎÎÎÎ

—

250

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage*

(IC = 0.5 Adc, IB = 0.05 Adc)

ÎÎÎÎ

VCE(sat)*

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage*

(IC = 0.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)*

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

10.0

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.01 2 5 10 20 80

BD135

BD137

BD139

0.1

0.05

IC, COLLECTOR CURRENT (AMP)

TJ = 125

Cdc

5 ms 0.5 ms 0.1 ms

0.02

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

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4 Motorola Bipolar Power Transistor Device Data

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BD135/D

*BD135/D*

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