LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 1 of 6
2N3 506U4 thru 2N35 07AU4
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
Qualified Levels:
JAN, J AN TX an d
JANTXV
DESCRIPTION
This family of high-frequenc y, epitaxial planar transist or s feat ure low saturation voltage. Th e
U4 package is her metically seal ed and pr ovides a low p r ofile for mi nimi zing boar d height.
The 'A' version maintains it's forward current transfer rati o, hFE, at low temper ature at higher
collector-emitter v olt age. Th ese devic es also available in TO-5 and TO-39 packages.
Microsemi al so offers nu merous other transistor products to meet hi gher and l ower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
U4 Package
Also available in:
TO-39 package
(leaded)
2N3506 – 2N3507A
TO-5 pa ck age
(long-leaded)
2N3506L – 2N3507AL
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3506U4 through 2N3507U4 serie s.
• RoHS compliant versions available (commercial grade only).
• Vce(sat) = 0.5 V @ Ic = 500 mA.
• Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
• Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.
APPLICATI ONS / BENE F ITS
• General purpose transis tors for medium power applications requiring high frequenc y switching and
low package profil e.
• Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3506U4 2N3507U4 Unit
Collector-Emitter Voltage VCEO 40 50 V
Collector-Base Voltage VCBO 60 80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current IC 3.0 A
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +100 °C (2) PD 1.0
5.0 W
Operating & Storage J unction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. De rate line ar ly 5.7 1 mW/°C for TA > +25 °C.
2. Vce = 40 V.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 2 of 6
2N3 506U4 thru 2N35 07AU4
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid.
• TERMINALS: Gold over nickel plated surface mount terminations.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: See package dimensi ons.
• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
• WEIGHT: .125 grams (125 milligrams).
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3506 A U4 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Maintains hFE @ -55°C
at higher VCE
SYMBOLS & DE FINIT IONS
Symbol
Definition
Cobo
Common-base open-circ uit output capacit ance.
I
C
Collector current, dc.
ICEO Collect or cutoff cur r ent, base open.
ICEX
Collect or cutoff cur r ent, c irc uit between base and emit ter.
I
EBO
Emitter cutoff current, c ollect or open.
hFE
Common-emitt er static forwar d curr ent transfer ratio.
VBE
Base-emi tter voltage, dc .
VCE
Collector-emitter voltage, dc .
VCEO
Collector-emitter voltage, bas e open.
VCBO
Collector-emitter voltage, emi tter open.
VEB Emitter-b ase vo lt age, dc.
VEBO Emitter-base vo l tage, coll ect or open.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 3 of 6
2N3 506U4 thru 2N35 07AU4
ELECTRICAL CHARACTERISTICS @ T
A
= +25° C, un less otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Voltage 2N3506U4
IC = 10 mA 2N3507U4 V(BR)CEO 40
50 V
Collector-Emitter Cutoff Current
ICEX
1.0
1.0
µA
V
CE
= 40 V
VCE = 60 V
2N3506U4
2N3507U4
Collector-Base Breakdown Voltage
IC = 100 µA 2N3506U4
2N3507U4 V(BR)CBO 60
80 V
Emitter-Base Breakdown Voltage
IE = 10 µA V(BR)EBO 5 V
ON CHARACTERISTICS (1)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1 V 2N3506U4
2N3507U4 hFE 50
35 250
175
Forward-Current Transfer Ratio
IC = 1.5 A , VCE = 2 V 2N3506U4
2N3507U4 hFE 40
30 200
150
Forward-Current Transfer Ratio
IC = 2.5 A , VCE = 3 V 2N3506U4
2N3507U4 hFE 30
25
Forward-Current Transfer Ratio
IC = 3.0 A , VCE = 5 V 2N3506U4
2N3507U4 hFE 25
20
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1.0 V @ -55 °C 2N3506U4
2N3507U4 hFE 25
17
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 2.0 V @ -55 °C 2N3506AU4
2N3507AU4 hFE 25
17
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VCE(sat) 0.5 V
Collector-Emitter Saturation Voltage
IC = 1.5 A , IB = 150 mA VCE(sat) 1.0 V
Collector-Emitter Saturation Voltage
IC = 2.5 A , IB = 250 mA VCE(sat) 1.5 V
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VBE(sat) 1.0 V
Base-Emitter Saturation Voltage
IC = 1.5 A , IB = 150 mA VBE(sat) 0.8 1.3 V
Base-Emitter Saturation Voltage
IC = 2.5 A , IB = 250 mA VBE(sat) 2.0 V
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 4 of 6
2N3 506U4 thru 2N35 07AU4
ELECTRICAL CHARACTERISTICS
@ TA = +25°C, unles s otherwise noted.
DYNAMIC CH ARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 20 MHz |hfe| 3.0 15
Output Capacitance
VCB = 10 V , IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 40 pF
Input Capacitance
VEB = 3.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 300 pF
SWITCHING CHARACTERISTICS
(2)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5 A , IB1 = 150 mA td 15 ns
Rise Time
IC = 1.5 A , IB1 = 150 mA tr 30 ns
Storage Time
IC = 1.5 A , IB1 = IB2 = 150 mA ts 55 ns
Fall Time
IC = 1.5 A , IB1 = IB2 = 150 mA tf 35 ns
(2) Consult MIL-PRF-19500/349 for additional information.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 5 of 6
2N3 506U4 thru 2N35 07AU4
GRAPHS
0
1
2
3
4
5
6
25 50 75 100 125 150 175 200 225
===================
Vce = 4V
Vce = 15V
Vce = 60V
===================
Legend
(Top to Bottom )
TC (oC) (Cas e)
FIGURE 1
Temperature-Power Der at ing Curve
NOTES: Thermal Resistan ce Junction to Case = 7.0 oC/W
Case mounted to infin ite sink.
TIME (s)
FIGURE 2
Maximum Thermal Impedance (RӨJC)
DC Operation Maximum Rating (W)
THETA (oC/W)
Legend
(Top to Bottom)
V ce = 4 V
V ce = 15 V
V ce = 60 V
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 6 of 6
2N3 506U4 thru 2N35 07AU4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
0.02
0.51
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
LL1
0.085
0.125
2.16
3.17
LL2
0.045
0.075
1.14
1.90
LS1 0.070 0.095 1.78 2.41
LS2 0.035 0.048 0.89 1.21
Q1
0.03
0.070
0.76
1.78
Q2
0.02
0.035
0.51
0.88
TERMINAL
1
COLLECTOR
2
BASE
3
EMITTER