N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 4.4A RDS(ON) 1.4 MDD5N50 is suitable device for SMPS, Ballast and general purpose applications. @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V 4.4 A 2.8 A o TC=25 C Continuous Drain Current o TC=100 C Pulsed Drain Current (1) ID IDM TC=25oC Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) PD Dv/dt (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range 17.6 A 70 W 0.56 W/ oC 4.5 V/ns mJ EAS 230 TJ, Tstg -55~150 Symbol Rating RJA 62.5 RJC 1.8 o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jun. 20011 Version 2.4 (1) (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V MDD5N50 Part Number Temp. Range MDD5N50RH o -55~150 C Package Packing RoHS Status D - Pak Reel Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 A Gate Leakage Current IGSS VGS = 30V, VDS = 0V - - 100 nA 1.15 1.4 - 5 - S - 12.2 16 - 3.6 5 Drain-Source ON Resistance Forward Transconductance RDS(ON) VGS = 10V, ID = 2.2A gfs VDS = 30V, ID = 2.2A V Dynamic Characteristics Total Gate Charge Qg VDS = 400V, ID = 5.0A, VGS = 10V (3) Gate-Source Charge Qgs Gate-Drain Charge Qgd - 4.7 6.5 Input Capacitance Ciss - 500 650 Reverse Transfer Capacitance Crss - 3 4.0 Output Capacitance Coss - 65 85 Turn-On td(on) - 12 35 - 24 60 - 24 60 tf - 22 55 IS - 4.4 - A - - 1.4 V - 270 - ns - 1.8 - C Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 250V, ID = 5.0A, RG = 25(3) pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 4.4A, VGS = 0V IF = 5.0A, dl/dt = 100A/s(3) Note : 1. Pulse width is based on R JC & R JA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 5.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C 4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25, Starting TJ=25C Jun. 20011 Version 2.4 2 MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V Ordering Information 2.2 2.1 2.0 1.9 RDS(ON) [ ] 10 ID,Drain Current [A] 2.3 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V 1 1.8 1.7 VGS=10.0V 1.6 VGS=20V 1.5 1.4 1.3 Notes 1. 250 Pulse Test 2. TC=25 1.2 0.1 0.1 1.1 1.0 1 10 0 5 10 VDS,Drain-Source Voltage [V] 20 25 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 1.8 Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 15 1. VGS = 10 V 2. ID = 5 A 1.6 1.4 VGS=10V 1.2 VGS=4.5V 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 Notes : * Notes ; 1. VDS=30V IDR Reverse Drain Current [A] 1. VGS = 0 V 2. ID = 250 ID [A] 10 150 10 25 -55 1 0.0 1 4 5 6 7 8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jun. 20011 Version 2.4 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V 2.4 MDD5N50 N-Channel MOSFET 500V 1000 Note : ID = 5.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 800 100V 8 250V 400V Capacitance [pF] VGS, Gate-Source Voltage [V] 10 6 4 Ciss 600 400 Notes ; 2 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 0 2 4 6 8 10 0 0.1 12 1 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 8 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 10 s 1 6 1 ms 100 s ID, Drain Current [A] 10 10 ms 10 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 100 ms DC 0 -1 4 2 Single Pulse TJ=Max rated TC=25 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 10000 single Pulse RthJC = 1.8 /W TC = 25 D=0.5 0 8000 0.2 Power (W) Z JC(t), Thermal Response 10 0.1 0.05 -1 10 0.02 0.01 6000 4000 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=1.8 /W 2000 single pulse 0 1E-5 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Jun. 20011 Version 2.4 1E-4 4 MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V Physical Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Jun. 20011 Version 2.4 5 MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun. 20011 Version 2.4 6 MagnaChip Semiconductor Ltd.