Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
VDSS
500
V
VGSS
±30
V
Continuous Drain Current
TC=25oC
ID
4.4
A
TC=100oC
2.8
A
IDM
17.6
A
Power Dissipation
TC=25oC
PD
70
W
Derate above 25 oC
0.56
W/ oC
Dv/dt
4.5
V/ns
EAS
230
mJ
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case(1)
RθJC
1.8
MDD5N50
N-Channel MOSFET 500V, 4.4 A, 1.4Ω
General Description
The MDD5N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDD5N50 is suitable device for SMPS, Ballast and
general purpose applications.
Features
VDS = 500V
ID = 4.4A @VGS = 10V
RDS(ON) ≤ 1.4Ω @VGS = 10V
Applications
Power Supply
PFC
Ballast
Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDD5N50RH
-55~150oC
D – Pak
Reel
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
500
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
-
5.0
Drain Cut-Off Current
IDSS
VDS = 500V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 2.2A
1.15
1.4
Ω
Forward Transconductance
gfs
VDS = 30V, ID = 2.2A
-
5
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 400V, ID = 5.0A, VGS = 10V(3)
-
12.2
16
nC
Gate-Source Charge
Qgs
-
3.6
5
Gate-Drain Charge
Qgd
-
4.7
6.5
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
500
650
pF
Reverse Transfer Capacitance
Crss
-
3
4.0
Output Capacitance
Coss
-
65
85
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 250V, ID = 5.0A,
RG = 25Ω(3)
-
12
35
ns
Rise Time
tr
-
24
60
Turn-Off Delay Time
td(off)
-
24
60
Fall Time
tf
-
22
55
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
-
4.4
-
A
Source-Drain Diode Forward Voltage
VSD
IS = 4.4A, VGS = 0V
-
-
1.4
V
Body Diode Reverse Recovery Time
trr
IF = 5.0A, dl/dt = 100A/μs(3)
-
270
-
ns
Body Diode Reverse Recovery
Charge
Qrr
-
1.8
-
μC
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤5.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0 5 10 15 20 25
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
VGS=10.0V VGS=20V
RDS(ON) [Ω ]
ID,Drain Current [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=10V
VGS=4.5V
※ Notes :
1. VGS = 10 V
2. ID = 5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
4 5 6 7 8
1
10
25℃
* Notes ;
1. VDS=30V
150℃
-55℃
ID [A]
VGS [V]
0.1 1 10
0.1
1
10
Notes
1. 250㎲ Pulse Test
2. TC=25℃
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
ID,Drain Current [A]
VDS,Drain-Source Voltage [V]
-50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Fig.12 Single Pulse Maximum Power
Dissipation
0 2 4 6 8 10 12
0
2
4
6
8
10
400V
250V
100V
※ Note : ID = 5.0A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101102
10-2
10-1
100
101
102
10 s
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0.1 1 10
0
200
400
600
800
1000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC, Case Temperature [℃]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=1.8℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
2000
4000
6000
8000
10000 single Pulse
RthJC = 1.8℃/W
TC = 25℃
Power (W)
Pulse Width (s)
Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
Physical Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
Jun. 20011 Version 2.4 MagnaChip Semiconductor Ltd.
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MDD5N50 N-Channel MOSFET 500V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.