PD - 91416D RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) IRHNA7064 JANSR2N7431U 60V, N-CHANNEL REF: MIL-PRF-19500/664 TM (R) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7064 100K Rads (Si) IRHNA3064 300K Rads (Si) IRHNA4064 500K Rads (Si) IRHNA8064 1000K Rads (Si) RDS(on) 0.015 0.015 0.015 0.015 ID QPL Part Number 75A* JANSR2N7431U 75A* JANSF2N7431U 75A* JANSG2N7431U 75A* JANSH2N7431U International Rectifier's RAD-Hard TM HEXFET (R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-2 Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 75* 56 300 300 2.4 20 500 75* 30 2.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (for 5sec) 3.3 (Typical) C g *Current is limited by package For footnotes refer to the last page www.irf.com 1 02/14/07 IRHNA7064, JANSR2N7431U Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage BVDSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 60 -- -- V -- 0.056 -- V/C -- -- 2.0 18 -- -- -- -- -- -- -- -- 0.015 0.018 4.0 -- 25 250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 270 60 110 27 120 120 100 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4900 2800 860 -- -- -- V S A nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 56A A VGS = 12V, ID = 75A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 56A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 30V VDD =30V, ID = 75A VGS =12V, RG = 2.35 ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 75* 300 1.5 360 3.1 Test Conditions A V ns C Tj = 25C, IS = 75A, VGS = 0V A Tj = 25C, IF = 75A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units -- -- -- 1.6 0.42 -- C/W Test Conditions Soldered to a 1" sq. copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA7064, JANSR2N7431U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Diode Forward Voltage A 300K-1000KRads(Si)2 Min Max Min Max 60 2.0 -- -- -- -- -- 4.0 100 -100 25 0.015 60 1.25 -- -- -- -- -- 4.5 100 -100 50 0.025 -- 1.5 -- 1.5 Units Test Conditions V VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 48V, VGS =0V VGS = 12V, ID =56A nA A V VGS = 0V, IS = 75A 1. Part number IRHNA7064 (JANSR2N7431U) 2. Part numbers IRHNA3064 (JANSF2N7431U), IRHNA4064 (JANSG2N7431U) and IRHNA8064 (JANSH2N7431U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I LET (MeV/(mg/cm2)) 36.8 59.9 Range VDS (V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V 39 60 60 45 40 32.8 40 35 30 25 Energy (MeV) 305 345 @VGS=-20V 30 20 70 60 VDS 50 40 BR I 30 20 10 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA7064, JANSR2N7431U 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 20s PULSE WIDTH 5.0V T = 25 C J 10 0.1 1 10 10 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 10 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 5.0V 20s PULSE WIDTH TJ = 150 C 12 89A ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 10000 VGS , Gate-to-Source Voltage (V) 6000 Ciss Coss 4000 2000 0 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance (pF) IRHNA7064, JANSR2N7431U Crss 10 VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 0 1 ID = 35A 75A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 100 150 200 250 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 C TJ = 150 C 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 50 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10 V GS = 0 V 1 0.0 1.0 2.0 3.0 4.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100us 100 5.0 1ms 10ms 10 1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA7064, JANSR2N7431U Pre-Irradiation 120 RD VDS LIMITED BY PACKAGE V GS 100 D.U.T. ID , Drain Current (A) RG + - VDD 80 VGS Pulse Width 1 s Duty Factor 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 0 90% 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7064, JANSR2N7431U 15V D.U.T RG + - VDD IAS VGS 20V tp TOP 1200 BOTTOM ID 16A 22A 35A 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1400 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .2F .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA7064, JANSR2N7431U Pre-Irradiation Foot Notes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L=0.17mH Peak IL = 75A, VGS =12V A ISD 75A, di/dt 220A/s, VDD 60V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2007 8 www.irf.com